The invention provides a lighting device (100) configured to generate lighting device light (101), wherein the lighting device light (101) includes an emission band (110) in the visible part of the spectrum which represents at least 80% of the total power (W) of the lighting device light (101) in the visible part of the spectrum, wherein the emission band (110) has a full width half maximum of at maximum 60 nm, and wherein the emission band (110) has a peak maximum (MM3), wherein said emission band (110) comprises luminescent material light (21), wherein the lighting device (100) comprises (i) a solid state-based light source (10), configured to generate light source light (11) having a peak maximum (MX2), and (ii) a luminescent material (20), configured to convert at least part of the light source light (11) into said luminescent material light (21), wherein the solid state-based light source (10) is configured to provide said light source light (11) with 0<MM3MX2<60 nm.

Provided are a saturable absorber including at least one material selected from a group of MXenes, and a Q-switching and mode-locked pulsed laser system using the same.

A silicon-based quantum dot device (1) is disclosed. The device comprises a substrate (8) and a layer (7) of silicon or silicon-germanium supported on the substrate which is configured to provide at least one quantum dot (5.sub.1, 5.sub.2: FIG. 5). The layer of silicon or silicon-germanium has a thickness of no more than ten monolayers. The layer of silicon or silicon-germanium may have a thickness of no more than eight or five monolayers.

Disclosed is a tunneling diode, which includes a graphene-silicon quantum dot hybrid structure, having improved performance and electrical characteristics by controlling the sizes of silicon quantum dots and the doping concentration of graphene. The ideal tunneling diode of the present disclosure may be utilized in diode-based optoelectronic devices.

The present invention generally relates to nanoscale wires and other nanomaterials, including nanoscale wires used as sensors, including nanoscale wires comprising semiconductor nanowires, carbon nanotubes, graphene, or metal oxide nanomaterials. Certain aspects of the invention are generally directed to polymer coating on nanoscale wires that can be used to increase sensitivity to analytes, for example, in physiologically relevant conditions. For example, the polymer may have an average pore size comparable in size to an analyte. Accordingly, in some cases, the nanoscale wires can be used as sensors, even in ionic solutions, e.g., under physiologically relevant conditions. Other aspects of the invention include assays, sensors, kits, and/or other devices that include such nanoscale wires, methods of making and/or using such nanoscale wires, or the like.

There is provided a quantum dot solar cell having a high optical absorption coefficient. The quantum dot solar cell includes a quantum dot layer 3 including a plurality of quantum dots 1, wherein the quantum dot layer 3 includes a first quantum dot layer 3A having an index /x of 5% or more, wherein x is an average particle size, and is a standard deviation. The quantum dot layer 3 also includes a second quantum dot layer 3B that is provided on the light entrance surface 3b and/or the light exit surface 3c of the first quantum dot layer 3A and has an average particle size and an index /x smaller than those of the first quantum dot layer 3A.

The present invention discloses a color photoresist and its use, a color film substrate, a display panel and a liquid crystal display, which pertains to the field of photosensitive materials. The color photoresist comprises a photoinitiator and QDs. The photoinitiator is a first photoinitiator containing no electron-rich group or a second photoinitiator containing an electron-rich group. The second photoinitiator comprises a conjugation structure, and the conjugation structure consists of the electron-rich group and an adjacent group of the electron-rich group. The color photoresist provided in embodiments of the present invention contains QDs which emit light normally. The color film substrate prepared by using the color photoresist has a high color gamut and can effectively improve the picture quality of the liquid crystal display.

In an embodiment of the disclosure, a structure is provided which comprises a silicon substrate and a plurality of necklaces of silicon nanowires which are in direct physical contact with a surface of the silicon substrate, wherein the necklaces cover an area of the silicon substrate.

Provided is a method for forming a two-dimensional array of semiconductor quantum confined structures. The method includes providing a layer that has first atoms and second atoms, the first atoms having a different size than the second atoms; providing an indenter template that includes at least one indenter structure extending from a surface of the indenter template; contacting the layer and the at least one indenter structure together with a pressure sufficient to generate an elastic deformation in the layer but without generating plastic deformation of the layer; annealing the layer. The contacting of the layer and the at least one indenter structure includes forming at least one quantum confined structure in the layer.

A light-emitting device and a manufacturing method therefor, a display apparatus comprising the light-emitting device, and an optical detection apparatus comprising the light-emitting device. The light-emitting device includes a substrate, and an anode, a hole injection layer, a hole-transmission layer, a light emitting layer, an electron transmission layer, and a cathode sequentially stacked on the substrate. The material for forming the hole-transmission layer and/or the electron transmission layer includes a photoconductive high polymer material.