The invention provides a lighting device (100) configured to generate lighting device light (101), wherein the lighting device light (101) includes an emission band (110) in the visible part of the spectrum which represents at least 80% of the total power (W) of the lighting device light (101) in the visible part of the spectrum, wherein the emission band (110) has a full width half maximum of at maximum 60 nm, and wherein the emission band (110) has a peak maximum (MM3), wherein said emission band (110) comprises luminescent material light (21), wherein the lighting device (100) comprises (i) a solid state-based light source (10), configured to generate light source light (11) having a peak maximum (MX2), and (ii) a luminescent material (20), configured to convert at least part of the light source light (11) into said luminescent material light (21), wherein the solid state-based light source (10) is configured to provide said light source light (11) with 0<MM3MX2<60 nm.

Methods for producing nanostructures, particularly Group III-V semiconductor nanostructures, are provided. The methods include use of novel Group III and/or Group V precursors, novel surfactants, oxide acceptors, high temperature, and/or stable co-products. Related compositions are also described. Methods and compositions for producing Group III inorganic compounds that can be used as precursors for nanostructure synthesis are provided. Methods for increasing the yield of nanostructures from a synthesis reaction by removal of a vaporous by-product are also described.

Methods for producing nanostructures, particularly Group III-V semiconductor nanostructures, are provided. The methods include use of novel Group III and/or Group V precursors, novel surfactants, oxide acceptors, high temperature, and/or stable co-products. Related compositions are also described. Methods and compositions for producing Group III inorganic compounds that can be used as precursors for nanostructure synthesis are provided. Methods for increasing the yield of nanostructures from a synthesis reaction by removal of a vaporous by-product are also described.

Embodiments of a display device including barrier layer coated quantum dots and a method of making the barrier layer coated quantum dots are described. Each of the barrier layer coated quantum dots includes a core-shell structure and a hydrophobic barrier layer disposed on the core-shell structure. The hydrophobic barrier layer is configured to provide a distance between the core-shell structure of one of the quantum dots with the core-shell structures of other quantum dots that are in substantial contact with the one of the quantum dots. The method for making the barrier layer coated quantum dots includes forming reverse micro-micelles using surfactants and incorporating quantum dots into the reverse micro-micelles. The method further includes individually coating the incorporated quantum dots with a barrier layer and isolating the barrier layer coated quantum dots with the surfactants of the reverse micro-micelles disposed on the barrier layer.