A methodology for synthesizing a nanoparticle batch, such as but not limited to a metal chalcogenide nanoparticle batch and further such as but not limited to a metal sulfide nanoparticle batch is predicated upon an expectation and observation that at elevated concentrations of at least one reactant material within a heat-up nanoparticle batch synthesis method, the resulting nucleated batch comprises nanoparticles that may be dimensionally focused to provide a substantially monodisperse nanoparticle batch. The embodied methodology is also applicable to a continuous reactor. The embodied methodology also considers viscosity as a dimensionally focusing result effective variable.

A quantum dot electronic device comprises a first encapsulation layer, a first electrode disposed on the first encapsulation layer, a quantum dot pattern disposed on the first electrode, a second electrode disposed on the quantum dot pattern and a second encapsulation layer disposed on the second electrode. The quantum dot pattern may be formed by an intaglio transfer printing method, where the method comprises forming a quantum dot layer on a donor substrate, picking up the quantum dot layer using a stamp, putting the quantum dot layer into contact with an intaglio substrate using the stamp and separating the stamp from the intaglio substrate. Using the quantum dot transfer printing method, a subminiature quantum dot pattern can be transferred at a high transfer rate. Accordingly, a highly integrated quantum dot electronic device exhibiting excellent performance and a high integrated quantum dot light emitting device with an ultrathin film can be realized.

Semiconductor structures having a nanocrystalline core and corresponding nanocrystalline shell and insulator coating, wherein the semiconductor structure includes an anisotropic nanocrystalline core composed of a first semiconductor material, and an anisotropic nanocrystalline shell composed of a second, different, semiconductor material surrounding the anisotropic nanocrystalline core. The anisotropic nanocrystalline core and the anisotropic nanocrystalline shell form a quantum dot. An insulator layer encapsulates the nanocrystalline shell and anisotropic nanocrystalline core.

Illumination devices based on quantum dot technology and methods of making such devices are described. An illumination device includes a substrate having a plurality of microLEDs, a beam splitter, and a film having a plurality of quantum dots. The beam splitter includes a plurality of layers and is disposed between the substrate and the film having the plurality of quantum dots.

An organic light emitting element includes a first electrode a second electrode that faces the first electrode, an emission layer between the first electrode and the second electrode, the emission layer including quantum dots, and a hole transport layer between the first electrode and the emission layer. The quantum dots include at least one of a Group I-VI compound, a Group II-VI compound, and a Group III-VI compound. The hole transport layer includes at least one of a p-doped Group I-VI compound, a p-doped Group II-VI compound, and a p-doped Group III-VI compound.

A semiconductor nanocrystal particle including zinc (Zn), tellurium (Te) and selenium (Se), a method of producing the same, and an electronic device including the same are disclosed. In the semiconductor nanocrystal particle, an amount of the tellurium is less than an amount of the selenium, the particle includes a core including a first semiconductor material including zinc, tellurium, and selenium and a shell disposed on at least a portion of the core and including a second semiconductor material having a different composition from the first semiconductor material, and the semiconductor nanocrystal particle emits blue light including a maximum peak emission at a wavelength of less than or equal to about 470 nanometers.

An emissive nanocrystal particle includes a core including a first semiconductor nanocrystal including a Group III-V compound and a shell including a second semiconductor nanocrystal surrounding the core, wherein the emissive nanocrystal particle includes a non-emissive Group I element.

A semiconductor nanocrystal particle including zinc (Zn), tellurium (Te) and selenium (Se), a method of producing the same, and an electronic device including the same are disclosed. In the semiconductor nanocrystal particle, an amount of the tellurium is less than an amount of the selenium, the particle includes a core including a first semiconductor material including zinc, tellurium, and selenium and a shell disposed on at least a portion of the core and including a second semiconductor material having a different composition from the first semiconductor material, and the semiconductor nanocrystal particle emits blue light including a maximum peak emission at a wavelength of less than or equal to about 470 nanometers.

A quantum dot including a first ligand and a second ligand on a surface of the quantum dot, a composition or composite including the same, and a device including the same. The first ligand includes a compound represented by Chemical Formula 1 and the second ligand includes a compound represented by Chemical Formula 2:
MA.sub.n  Chemical Formula 1 wherein M, n, and A are the same as defined in the specification; and ##STR00001## wherein, R.sup.1, L.sub.1, Y.sub.1, R, k1, and k2 are the same as defined in the specification.

A quantum dot includes a nano-seed particle having a particular crystal plane exposed, and a first epitaxial layer formed on the particular crystal plane of the nano-seed particle.