In various embodiments the present disclosure provides a core/shell nanocrystal comprising a core and a shell formed on the core, wherein the core/shell nanocrystal is co-doped with at least one metal dopant and at least one trivalent cation. In some embodiments, the trivalent cation is a Group 13 element. Methods of making and using the core/shell nanocrystal are also described.

A quantum dot-polymer composite film includes: a plurality of quantum dots, wherein a quantum dot of the plurality of quantum dots includes an organic ligand on a surface of a the quantum dot; a cured product of a photopolymerizable monomer including a carbon-carbon unsaturated bond; and a residue including a residue of a high-boiling point solvent, a residue of a polyvalent metal compound, or a combination thereof.

A quantum dot includes a nano-seed particle having a particular crystal plane exposed, and a first epitaxial layer formed on the particular crystal plane of the nano-seed particle.

A pre-polymer formulation comprising quantum dots and a precursor for a polymer having a free volume parameter V.sub.FH2/γ with a value less than or equal to 0.03 cm.sup.3/g is disclosed. A pre-polymer formulation comprising quantum dots and a cyclohexylacrylate monomer is further disclosed. Also disclosed are a quantum dot composition including quantum dots dispersed in a polymer matrix, the quantum dot composition being prepared from a pre-polymer formulation comprising quantum dots and a precursor for a polymer having a free volume parameter V.sub.FH2/γ with a value less than or equal to cm.sup.3/g; a method; and other products including a quantum dot composition described herein.

The present invention provides nanostructure compositions and methods of producing nanostructure compositions. The nanostructure compositions comprise a population of nanostructures comprising thiol-functionalized ligands to increase the stability of the composition in thiol resins. The present invention also provides nanostructure films comprising a population of nanostructures comprising thiol-functionalized ligands and methods of making nanostructure films using these nanostructures.

A quantum dot manufacturing method comprises (a) dispersing, in a solvent, nano-seed particles whose crystal planes are exposed, and (b) growing semiconductor layers on the exposed crystal planes of the nano-seed particles in the solvent.

Embodiments of a display device including barrier layer coated quantum dots and a method of making the barrier layer coated quantum dots are described. Each of the barrier layer coated quantum dots includes a core-shell structure and a hydrophobic barrier layer disposed on the core-shell structure. The hydrophobic barrier layer is configured to provide a distance between the core-shell structure of one of the quantum dots with the core-shell structures of other quantum dots that are in substantial contact with the one of the quantum dots. The method for making the barrier layer coated quantum dots includes forming reverse micro-micelles using surfactants and incorporating quantum dots into the reverse micro-micelles. The method further includes individually coating the incorporated quantum dots with a barrier layer and isolating the barrier layer coated quantum dots with the surfactants of the reverse micro-micelles disposed on the barrier layer.

The present disclosure provides quantum dot organic ligand and preparation method thereof, quantum dot structure material, quantum-dot-containing layer, and quantum-dot-containing light emitting diode. The quantum dot organic ligand have the following structure R1-(R2).sub.n-R3, wherein R1 is a chelating group capable of chelating with a metal; R2 is a group having a conjugated electron pair, and n is a positive integer; and R3 is organic group. The conjugated electron pair structure of R2 facilitates delocalization of electrons, which can improve the transport and conduction of electrons and/or holes, thereby improving the efficiency of quantum dots and lowering the turn-on voltage.

The invention is in the field of nanostructure synthesis. The invention relates to methods for producing nanostructures, particularly Group III-V and Group II-VI semiconductor nanostructures. The invention also relates to high temperature methods of synthesizing nanostructures comprising simultaneous injection of cores and shell precursors.

A method is described for preparing a nanorods assembly. The method comprises providing a mixture comprising at least a liquid crystal and nanorods and depositing said mixture on the surface of at least substrate. The method further comprises aligning said nanorods with their long axis of the nanorods along a preferred direction on said substrate resulting in a nanorods and liquid crystal assembly, said aligning being performed by applying an external alternating current electrical field.