The invention provides a luminescent material (10) comprising quantum dots (100), wherein the luminescent material (10) further comprises a capping agent (110) coordinating to the quantum dots (10), wherein the capping agent comprises M.sub.xO.sub.y(OH).sub.z.sup.n, wherein M is selected from the group consisting of B, Al, P, S, V, Zn, Ga, Ge, As, Se, Nb, Mo, Cd, In, Sn, Sb, Te, Ta and W, wherein x1, y+z1, and wherein n indicates a positive or negative charge of the capping agent.

A photoelectric conversion device includes a quantum dot layer formed by integrating a plurality of quantum dots on a main surface of a semiconductor substrate. The quantum dot layer contains not less than two types of organic molecules having different carbon numbers, among the quantum dots. The quantum dots are bonded to one another by lower-carbon-number organic molecules having a lower carbon number to form aggregates of the quantum dots. Higher-carbon-number organic molecules having a higher carbon number are bonded to the outer sides of the aggregates.

A metal oxide/silicon dioxide-coated quantum dot and a preparation method thereof are provided. The metal oxide/silicon dioxide is selected from aluminum oxide/silicon dioxide, zirconium dioxide/silicon dioxide, titanium dioxide/silicon dioxide or zinc oxide/silicon dioxide, and the content of the metal oxide/silicon dioxide in the metal oxide/silicon dioxide-coated quantum dot is 1 wt % to 98 wt %. The metal oxide/silicon dioxide-coated quantum dot is prepared by one of a sol-gel method and a pyrolysis method.

A method of synthesis of two-dimensional (2D) nanoflakes comprises the cutting of prefabricated nanoparticles. The method allows high control over the shape, size and composition of the 2D nanoflakes, and can be used to produce material with uniform properties in large quantities. Van der Waals heterostructure devices are prepared by fabricating nanoparticles, chemically cutting the nanoparticles to form nanoflakes, dispersing the nanoflakes in a solvent to form an ink, and depositing the ink to form a thin film.

A quantum dot, a color conversion panel, and a display device, the quantum dot including a core; and a shell layer positioned outside of the core, wherein at least one of the core and the shell layer is doped with aluminum, silicon, titanium, magnesium, or zinc, and the core includes a Group III-V compound.

Highly luminescent nanostructures, particularly highly luminescent quantum dots, are provided. The nanostructures have high photoluminescence quantum yields and in certain embodiments emit light at particular wavelengths and have a narrow size distribution. The nanostructures can comprise ligands, including C5-C8 carboxylic acid ligands employed during shell formation and/or dicarboxylic or polycarboxylic acid ligands provided after synthesis. Processes for producing such highly luminescent nanostructures are also provided, including methods for enriching nanostructure cores with indium and techniques for shell synthesis.

Example embodiments relate to a method of preparing a two-dimensional (2D) transition metal chalcogenide nanostructure, the method including preparing a 2D transition metal chalcogenide nanostructure by a reaction between a transition metal precursor and a chalcogen precursor in a composition including a solvent, wherein the chalcogen precursor is a compound including a first bond connecting two neighboring chalcogen elements and the second bond connecting one of the two neighboring chalcogen elements and a hetero-element adjacent thereto, and binding energy of the second bond is 110% or less of the binding energy of the first bond, a 2D transition metal chalcogenide nanostructure prepared thereby, and a device including the 2D transition metal chalcogenide nanostructure.

The present disclosure relates to a composition that includes a first element, a second element, a third element, a ligand, and an anion, where the first element and the second element form a nanocrystal that includes a surface and a crystal lattice, a first portion of the third element covers at least a second portion of the surface in the form of a layer, a third portion of the third element is incorporated into the crystal lattice, and the ligand and the anion are ionically bound to at least one of the second element and/or the first portion of the third element.

Provided are a saturable absorber including at least one material selected from a group of MXenes, and a Q-switching and mode-locked pulsed laser system using the same.

A nanocrystal particle including at least one semiconductor material and at least one halogen element, the nanocrystal particle including: a core comprising a first semiconductor nanocrystal; and a shell surrounding the core and comprising a crystalline or amorphous material, wherein the halogen element is present as being doped therein or as a metal halide