Patent classifications
Y10S977/843
ULTRA-HIGH DENSITY SINGLE-WALLED CARBON NANOTUBE HORIZONTAL ARRAY AND ITS CONTROLLABLE PREPARATION METHOD
The present invention discloses single-walled carbon nanotubes horizontal arrays with ultra-high density and the preparation method. The method comprises the following steps: loading a catalyst on a single crystal growth substrate; after annealing, introducing hydrogen into a chemical vapor deposition system to conduct a reduction reaction of the catalyst; and maintaining the introduction of the hydrogen to conduct the orientated growth of a single-walled carbon nanotube. The density of the ultra-high density single-walled carbon nanotube horizontal array obtained by this method exceeds 130 tubes/micrometer, and an electrical performance test is performed on the prepared ultra-high density single-walled carbon nanotube horizontal array shows a high on-current density of 380 μA/μm, and the transconductance of 102.5 μS/μm.
Carbon nanostructures from pyrolysis of organic materials
Methods and apparatus to generate carbon nanostructures from organic materials are described. Certain embodiments provide solid waste materials into a furnace, that pyrolyzes the solid waste materials into gaseous decomposition products, which are then converted to carbon nanostructures. Methods and apparatuses described herein provide numerous advantages over conventional methods, such as cost savings, reduction of handling risks, optimization of process conditions, and the like.
Structure for forming carbon nanofiber, carbon nanofiber structure and method for producing same, and carbon nanofiber electrode
Provided is a structure for forming carbon nanofiber, including a base material containing an oxygen ion-conductive oxide, and a metal catalyst that is provided on one surface side of the base material.
TUNNELING DIODE USING GRAPHENE-SILICON QUANTUM DOT HYBRID STRUCTURE AND METHOD OF MANUFACTURING THE SAME
Disclosed is a tunneling diode, which includes a graphene-silicon quantum dot hybrid structure, having improved performance and electrical characteristics by controlling the sizes of silicon quantum dots and the doping concentration of graphene. The ideal tunneling diode of the present disclosure may be utilized in diode-based optoelectronic devices.
SYSTEM AND METHOD FOR MASS PRODUCTION OF GRAPHENE PLATELETS IN ARC PLASMA
A system and method for producing graphene includes a heating block, substrate, motor and collection device. The substrate is arranged about the heating block and is configured to receive heat from the heating block. A motor is connected to the substrate to rotate the substrate about the heating block. A cathode and anode are configured to direct a flux stream for deposit onto the rotating substrate. A collection device removes the deposited material from the rotating substrate. A heating element is embedded in the heating block and imparts heat to the heating block. The heating block is made of cement or other material that uniformly disperses the heat from the heating element throughout the heating block. The flux stream can be a carbon vapor, with the deposited flux being graphene.
FILM COMPRISING SINGLE-LAYER CARBON NANOTUBES AND HAVING DENSE PORTIONS AND SPARSE PORTIONS, PROCESS FOR PRODUCING SAME, AND MATERIAL INCLUDING SAID FILM AND PROCESS FOR PRODUCING SAME
The present invention provides: a film that comprises single-layer carbon nanotubes having shapes which enable the characteristics thereof to be sufficiently exhibited; and a process for producing the film. The film, which comprises single-layer carbon nanotubes, has portions where single-layer carbon nanotubes are densely present and portions where single-layer carbon nanotubes are sparsely present, the dense portions forming a pseudo-honeycomb structure in a surface of the film.
CELL SHEET MANUFACTURING DEVICE AND MANUFACTURING METHOD THEREFOR
The present invention relates to a cell sheet manufacturing device and a manufacturing method therefor. More specifically, the present invention relates to a cell sheet manufacturing device comprising a support layer made of silicon rubber, a patterned electrode formed adjacent to the support layer and a graphene layer formed adjacent to the electrode, and a manufacturing method therefor.
METHOD FOR CONTINUOUS PRODUCTION OF HIGH QUALITY GRAPHENE
A continuous method for manufacturing graphene films using a metal substrate, wherein a first surface of the metal substrate is heated such that a top layer of the first surface melts to form a molten metal layer, and devices for carrying out the same.
SYSTEM AND METHOD OF PRODUCING A COMPOSITE PRODUCT
A method of producing a composite product is provided. The method includes providing a fluidized bed of carbon-based particles in a fluidized bed reactor, providing a catalyst or catalyst precursor in the fluidized bed reactor, providing a carbon source in the fluidized bed reactor for growing carbon nanotubes, growing carbon nanotubes in a carbon nanotube growth zone of the fluidized bed reactor, and collecting a composite product comprising carbon-based particles and carbon nanotubes.
SYSTEM AND METHOD OF PRODUCING A COMPOSITE PRODUCT
A method of producing a composite product is provided. The method includes providing a fluidized bed of metal oxide particles in a fluidized bed reactor, providing a catalyst or catalyst precursor in the fluidized bed reactor, providing a carbon source in the fluidized bed reactor for growing carbon nanotubes, growing carbon nanotubes in a carbon nanotube growth zone of the fluidized bed reactor, and collecting a composite product comprising metal oxide particles and carbon nanotubes.