Patent classifications
Y10S977/891
Using chemical vapor deposited films to control domain orientation in block copolymer thin films
Vacuum deposited thin films of material are used to create an interface that non-preferentially interacts with different domains of an underlying block copolymer film. The non-preferential interface prevents formation of a wetting layer and influences the orientation of domains in the block copolymer. The purpose of the deposited polymer is to produce nano structured features in a block copolymer film that can serve as lithographic patterns.
Metal-carbon-nanotube metal matrix composites for metal contacts on photovoltaic cells
A solar cell structure is disclosed that includes a first metal layer, formed over predefined portions of a sun-exposed major surface of a semiconductor structure, that form electrical gridlines of the solar cell; a network of carbon nanotubes formed over the first metal layer; and a second metal layer formed onto the network of carbon nanotubes, wherein the second metal layer infiltrates the network of carbon nanotubes to connect with the first metal layer to form a first metal matrix composite comprising a metal matrix and a carbon nanotube reinforcement, wherein the second metal layer is an electrically conductive layer in which the carbon nanotube reinforcement is embedded in and bonded to the metal matrix, and the first metal matrix composite provides enhanced mechanical support as well as enhanced or equal electrical conductivity for the electrical contacts against applied mechanical stressors to the electrical contacts.
Methods for the preparation of colloidal nanocrystal dispersion
Methods of preparing a dispersion of colloidal nanocrystals (NCs) for use as NC thin films are disclosed. A dispersion of NCs capped with ligands may be mixed with a solution containing chalcogenocyanate (xCN)-based ligands. The mixture may be separated into a supernatant and a flocculate. The flocculate may be dispersed with a solvent to form a subsequent dispersion of NCs capped with xCN-based ligands.
Methods of forming colloidal nanocrystal-based thin film devices
Methods of forming colloidal nanocrystal (NC)-based thin film devicesare disclosed. The methods include the steps of depositing a dispersion of NCs on a substrate to form a NC thin-film, wherein at least a portion of the NCs is capped with chalcogenocyanate (xCN)-based ligands; and doping the NC thin-film with a metal.
Device and method for tunable vapor condensed nanolenses
A method of forming nanolenses for imaging includes providing an optically transparent substrate having a plurality of particles disposed on one side thereof. The optically transparent substrate is located within a chamber containing therein a reservoir holding a liquid solution. The liquid solution is heated to form a vapor within the chamber, wherein the vapor condenses on the substrate to form nanolenses around the plurality of particles. The particles are then imaged using an imaging device. The imaging device may be located in the same device that contains the reservoir or a separate imaging device.
Necklaces of silicon nanowires
In an embodiment of the disclosure, a structure is provided which comprises a silicon substrate and a plurality of necklaces of silicon nanowires which are in direct physical contact with a surface of the silicon substrate, wherein the necklaces cover an area of the silicon substrate.
ALIGNMENT OF CARBON NANOTUBES IN CONFINED CHANNELS
Methods for forming carbon nanotube arrays are provided. Also provided are the arrays formed by the methods and electronic devices that incorporate the array as active layers. The arrays are formed by flowing a fluid suspension of carbon nanotubes through a confined channel under conditions that create a velocity gradient across the flowing suspension.
SYNTHESIS OF VERTICALLY ALIGNED METAL OXIDE NANOSTRUCTURES
Metal oxide nanostructure and methods of making metal oxide nanostructures are provided. The metal oxide nanostructures can be 1-dimensional nanostructures such as nanowires, nanofibers, or nanotubes. The metal oxide nanostructures can be doped or un-doped metal oxides. The metal oxide nanostructures can be deposited onto a variety of substrates. The deposition can be performed without high pressures and without the need for seed catalysts on the substrate. The deposition can be performed by laser ablation of a target including a metal oxide and, optionally, a dopant. In some embodiments zinc oxide nanostructures are deposited onto a substrate by pulsed laser deposition of a zinc oxide target using an excimer laser emitting UV radiation. The zinc oxide nanostructure can be doped with a rare earth metal such as gadolinium. The metal oxide nanostructures can be used in many devices including light-emitting diodes and solar cells.
METAL MATRIX COMPOSITES FOR CONTACTS ON SOLAR CELLS
A method for forming electrical contacts for a solar cell and a solar cell formed using the method is provided. The method includes forming a first metal layer over predefined portions of a surface of the solar cell; depositing a carbon nanotube layer over the first metal layer; and forming a second metal layer over the carbon nanotube layer, wherein the first metal layer, the carbon nanotube layer, and the second metal layer form a first metal matrix composite layer that provides electrical conductivity and mechanical support for the metal contacts.
Use of dielectric film to reduce resistivity of transparent conductive oxide in nanowire LEDs
Various embodiments include methods of fabricating light emitting diode (LED) devices, such as nanowire LED devices, that include forming a layer of a transparent, electrically conductive material over at least a portion of a non-planar surface of an LED device, and depositing a layer of a dielectric material over at least a portion of the layer of transparent conductive material, wherein depositing the layer of dielectric material comprises at least one of: (a) depositing the layer using a chemical vapor deposition (CVD) process, (b) depositing the layer at a temperature of 200 C. or more, and (c) depositing the layer using one or more chemically active precursors for the dielectric material.