Techniques and mechanisms for synthesizing quantum dot structures. In an embodiment, a first reaction is performed to dissolve a precursor of a semiconductor material, wherein water is created as a by-product of the first reaction. Some or all of the water is removed and another chemical compound is added, wherein the chemical compound is a primary alcohol or a 1,2-diol. After the addition of the chemical compound, a second reaction is performed to grow at least some nanocrystalline portion of the quantum dot. In another embodiment, the chemical compound is 1,2-hexanediol, 1,2-dodecanediol or 1-octadecanol.

Disclosed herein are embodiments of a coated type-I quantum dot comprising a core and a shell, and a silica layer, and a method for making the quantum dot. The quantum dot may be a thick-shelled quantum dot. Also disclosed are embodiments of a composition comprising one or more coated quantum dots and a polymer. The composition may be a luminescent solar concentrator. Device comprising the composition are disclosed. The device may comprise the composition, such as a luminescent solar concentrator, applied to a substrate, such as glass. The device may be a window or a solar module. Also disclosed is a method of applying the composition to the substrate to form a thin film luminescent solar concentrator.

A semiconductor nanoparticle includes a core and a shell covering a surface of the core. The shell has a larger bandgap energy than the core and is in heterojunction with the core. The semiconductor nanoparticle emits light when irradiated with light. The core is made of a semiconductor that contains M.sup.1, M.sup.2, and Z. M.sup.1 is at least one element selected from the group consisting of Ag, Cu, and Au. M.sup.2 is at least one element selected from the group consisting of Al, Ga, In and Tl. Z is at least one element selected from the group consisting of S, Se, and Te. The shell is made of a semiconductor that consists essentially of a Group 13 element and a Group 16 element.

The present disclosure provides a method for preparing a carbon nanotube conductive ball and a method for preparing a carbon nanotube ball conductive adhesive. The method for preparing the carbon nanotube conductive ball integrates the advantages of stability of polymer microsphere and SiO.sub.2 microsphere, and high conductivity of carbon nanotube, by applying polymer microsphere or SiO.sub.2 microsphere as matrix, and plating carbon nanotube material to obtain the spherical carbon nanotube conductive ball. The method is simple, low equipment requirements, abundant raw materials, low cost, and high efficiency, the particle size of the carbon nanotube conductive ball is controllable, the material stability and conductivity of the carbon nanotube conductive ball are excellent. The method for preparing the carbon nanotube ball conductive adhesive adopts carbon nanotube as an electrically conducting particle, which replaces the commonly used conductive gold ball in TFT-LCD field, the disadvantages in traditional conductive adhesive such as high filling content, expensive price, complicated preparation process, environmental pollution, and so on are solved. Besides, the carbon nanotube ball conductive adhesive also has a great prospect in ultra-fine circuit connections.

An object of the present invention is to provide a method for producing a vanadium dioxide-containing particle that is excellent in the thermochromic property and the transparency. The method for producing a vanadium dioxide-containing particle of the present invention is a method for producing a vanadium dioxide-containing particle having a thermochromic property by using a hydrothermal reaction, and is characterized by surface-modifying a surface of the vanadium dioxide-containing particle without separating a solvent and the vanadium dioxide-containing particle.

Provided is a CNT composite capable of achieving both high detection sensitivity and specific detection when used as a sensor. The carbon nanotube composite includes an aggregation inhibitor (A) and a blocking agent (B) attached to at least a portion of a surface.

A quantum dot electronic device comprises a first encapsulation layer, a first electrode disposed on the first encapsulation layer, a quantum dot pattern disposed on the first electrode, a second electrode disposed on the quantum dot pattern and a second encapsulation layer disposed on the second electrode. The quantum dot pattern may be formed by an intaglio transfer printing method, where the method comprises forming a quantum dot layer on a donor substrate, picking up the quantum dot layer using a stamp, putting the quantum dot layer into contact with an intaglio substrate using the stamp and separating the stamp from the intaglio substrate. Using the quantum dot transfer printing method, a subminiature quantum dot pattern can be transferred at a high transfer rate. Accordingly, a highly integrated quantum dot electronic device exhibiting excellent performance and a high integrated quantum dot light emitting device with an ultrathin film can be realized.

Provided are a core-shell structured perovskite particle light-emitter, a method of preparing the same, and a light emitting device using the same. The core-shell structured perovskite particle light-emitter or metal halide perovskite particle light-emitter has a perovskite nanocrystal structure and a core-shell structured particle structure. Therefore, in the perovskite particle light-emitter of the present invention, as a shell is formed of a substance having a wider band gap than that of a core, excitons may be more dominantly confined in the core, and durability of the nanocrystal may be improved to prevent exposure of the core perovskite to the air using a perovskite or inorganic semiconductor, which is stable in the air, or a polymer.

Illumination devices based on quantum dot technology and methods of making such devices are described. An illumination device includes a substrate having a plurality of microLEDs, a beam splitter, and a film having a plurality of quantum dots. The beam splitter includes a plurality of layers and is disposed between the substrate and the film having the plurality of quantum dots.

A semiconductor light emitting element is provided. The semiconductor light emitting element has a semiconductor stack, an n-side conductor layer, a p-side conductor layer, a dielectric multilayered film, an n-side reflective layer and a p-side reflective layer, disposed in that order. The n-side and p-side reflective layers contain Ag as a major component and contain particles of at least one selected from an oxide, a nitride, and a carbide.