A quantum dot includes a seed and a core enclosing the seed. The core is grown from the seed to improve size uniformity of the core. The seed includes a first compound without Cd. The first compound may be GaP. The core may include a second compound including elements from group XIII and group XV. The second compound may be InP. The quantum dot may also include a first shell of a third compound enclosing the core. The third compound may be ZnSe or ZnS. The quantum dot may also include a second shell of a fourth compound enclosing the first shell. The fourth compound may be ZnS when the third compound is ZnSe. Embodiments also relate to a quantum dot including first to third elements selected from XIII group elements and XV group elements and fourth to sixth elements selected from XII group elements and XVI group elements.

An optically transparent graphene-based wire-grid polarizer for operating at microwave frequencies (X band) has a glass substrate having multiple strips or layers of SOCl.sub.2 doped graphene. The strips are separated by portions of the glass substrate such that the strips are arranged in parallel. The SOCl.sub.2 doped graphene strips have a quasi-metallic quality allowing for the transmission of an electric field with horizontal polarization in the horizontal direction while reflecting the vertical portion of the electric field.

The present invention provides a method for manufacturing a quantum dot color filter, which uses a printing mold to pick up quantum dots and printing the quantum dots into a partially cured photoresist layer and then separates the quantum dots and the printing mold, followed by irradiation of UV light to completely cure the photoresist layer so that the quantum dots may uniformly distributed in the photoresist layer. This simplifies the process of transferring a quantum dot layer and reduces cost; requires no process of forming a sacrifice layer and no step of dissolving the sacrifice layer to prevent damage to the quantum dot layer; allows the quantum dots to be uniformly distributed in the photoresist layer to thereby improve the utilization of the quantum dots; and allows a quantum dot color filter so manufactured to be used with white backlighting or blue backlighting for achieving displaying of three primary colors of red, green, and blue.

A process for producing a light emitting diode device, the process including: forming a plurality of quantum dots on a surface of a layer including a first area and a second area, the forming including: exposing the first area of the surface to light having a first wavelength while exposing the first area to a quantum dot forming environment that causes the quantum dots in the first area to form at a first growth rate while the quantum dots have a dimension less than a first threshold dimension; exposing the second area of the surface to light having a second wavelength while exposing the second area to the quantum dot forming environment that causes the quantum dots in the second area to form at a third growth rate while the quantum dots have a dimension less than a second threshold dimension; and processing the layer to form the LED device.

A process for producing a light emitting diode device, the process including: forming a plurality of quantum dots on a surface of a layer including a first area and a second area; exposing the first area of the surface to light having a first wavelength while exposing the first area to a first etchant that causes the quantum dots in the first area to be etched at a first etch rate while the quantum dots have a dimension at or greater than a first threshold dimension; exposing the second area of the surface to light having a second wavelength while exposing the second area to a second etchant that causes the quantum dots in the second area to be etched at a third etch rate while the quantum dots have a dimension at or greater than a second threshold dimension; and processing the etched layer to form the LED device.

The present invention relates inter alia to a color display comprising nanoparticles and color filters.

Embodiments relate to a quantum rod, a quantum rod film, a quantum rod display device with a quantum rod. The quantum rod includes a first core, a second core separated from the first core, and a first shell surrounding the first and second cores.

A semiconductor structure includes a nanocrystalline core comprising a first semiconductor material, and at least one nanocrystalline shell comprising a second, different, semiconductor material that at least partially surrounds the nanocrystalline core. The nanocrystalline core and the nanocrystalline shell(s) form a quantum dot. An insulator layer encapsulates the quantum dot to create a coated quantum dot, and at least one additional insulator layer encapsulates the coated quantum dot.

Embodiments of a display device including barrier layer coated quantum dots and a method of making the barrier layer coated quantum dots are described. Each of the barrier layer coated quantum dots includes a core-shell structure and a hydrophobic barrier layer disposed on the core-shell structure. The hydrophobic barrier layer is configured to provide a distance between the core-shell structure of one of the quantum dots with the core-shell structures of other quantum dots that are in substantial contact with the one of the quantum dots. The method for making the barrier layer coated quantum dots includes forming reverse micro-micelles using surfactants and incorporating quantum dots into the reverse micro-micelles. The method further includes individually coating the incorporated quantum dots with a barrier layer and isolating the barrier layer coated quantum dots with the surfactants of the reverse micro-micelles disposed on the barrier layer.

Embodiments of a display device including barrier layer coated quantum dots and a method of making the barrier layer coated quantum dots are described. Each of the barrier layer coated quantum dots includes a core-shell structure and a hydrophobic barrier layer disposed on the core-shell structure. The hydrophobic barrier layer is configured to provide a distance between the core-shell structure of one of the quantum dots with the core-shell structures of other quantum dots that are in substantial contact with the one of the quantum dots. The method for making the barrier layer coated quantum dots includes forming reverse micro-micelles using surfactants and incorporating quantum dots into the reverse micro-micelles. The method further includes individually coating the incorporated quantum dots with a barrier layer and isolating the barrier layer coated quantum dots with the surfactants of the reverse micro-micelles disposed on the barrier layer.