Provided is a method for manufacturing an EL device, the method including peeling a mother substrate from a layered body including a light-emitting element layer with irradiation with a laser. The mother substrate and the layered body are in contact with each other with a resin layer of the layered body interposed therebetween, and in a case that the peeling is performed by irradiating the resin layer with the laser, the irradiation is performed on at least a part of an end portion of the resin layer under a condition different from that in a central portion of the resin layer.

After an intermediate region and a flexible substrate region of a plastic film of a multilayer stack are divided, the interface between the flexible substrate region and a glass base is irradiated with laser light. The multilayer stack is separated into the first portion and the second portion while the multilayer stack is kept in contact with the stage. The first portion includes a plurality of OLED devices in contact with the stage. The OLED devices include a plurality of functional layer regions and the flexible substrate region. The second portion includes the glass base and the intermediate region. The step of irradiating with the laser light includes forming the laser light from a plurality of arranged laser light sources and temporally and spatially modulating a power of the plurality of laser light sources according to a shape of the flexible substrate region of the synthetic resin film.

After an intermediate region and a flexible substrate region of a plastic film of a multilayer stack are divided, the interface between the flexible substrate region and a glass base is irradiated with laser light. The multilayer stack is separated into the first portion and the second portion while the multilayer stack is kept in contact with the stage. The first portion includes a plurality of OLED devices in contact with the stage. The OLED devices include a plurality of functional layer regions and the flexible substrate region. The second portion includes the glass base and the intermediate region. The step of irradiating with the laser light includes forming the laser light from a plurality of arranged laser light sources and temporally and spatially modulating a power of the plurality of laser light sources according to a shape of the flexible substrate region of the synthetic resin film.

A method is provided for decomposition of a polymeric article, wherein the polymeric article contains a polymer and one or more energy modulation agents, by applying an applied energy to the polymeric article, wherein the one or more energy modulation agents convert the applied energy into an emitted energy sufficient to cause bond destruction within the polymer.

According to one embodiment, a chip transfer member includes a light-transmitting portion and a metal portion. The light-transmitting portion has a light incident surface, a light-emitting surface, and a side surface. The metal portion is provided at the side surface of the light-transmitting portion.

A product-substrate-to-carrier-substrate bond with a product substrate, which is bonded to a carrier substrate via a connection layer, wherein a soluble layer is arranged between the connection layer and the product substrate, and wherein a) the soluble layer is soluble due to an interaction with an electromagnetic radiation of a radiation source, and b) the connection layer and the carrier substrate are both at least predominantly transparent to the electromagnetic radiation transmitted through the connection layer, wherein a material of the soluble layer and the electromagnetic radiation are chosen such that an increase of temperature of the soluble layer caused by the interaction with the electromagnetic radiation is less than 50 C.

According to a flexible OLED device production method of the present disclosure, after an intermediate region (30i) and a flexible substrate region (30d) of a plastic film (30) of a muitilayer stack (100) are divided, the interface between the flexible substrate region (30d) and a glass base (10) is irradiated with laser light. The multilayer stack (100) is separated into the first portion (110) and the second portion (120) while the multilayer stack (100) is kept in contact with the stage (210). The first portion (110) includes a plurality of OLED devices (1000) which are in contact with the stage (210). The OLED devices (1000) include a plurality of functional layer regions (20) and the flexible substrate region (30d). The second portion (120) includes the glass base (10) and the intermediate region (30i). The step of irradiating with the laser light includes forming the laser light from a plurality of arranged laser light sources and temporally and spatially modulating a power of the plurality of laser light sources according to a shape of the flexible substrate region of the synthetic resin film such that the irradiation intensity of the laser light for at least part of the interface between the intermediate region (30i) and the glass base (10) is lower than the irradiation intensity of the laser light for the interface between the flexible substrate region (30d) and the glass base (10).

According to a flexible OLED device production method of the present disclosure, after an intermediate region (30i) and flexible substrate regions (30d) of a plastic film (30) of a multilayer stack (100) are divided from one another, the interface between the flexible substrate regions (30d) and a glass base (10) is irradiated with laser light. The multilayer stack (100) is separated into a first portion (110) and a second portion (120) while the multilayer stack (100) is in contact with a stage (210). The first portion (110) includes a plurality of OLED devices (1000) which are in contact with the stage (210). The OLED devices (1000) include a plurality of functional layer regions (20) and the flexible substrate regions (30d). The second portion (120) includes the glass base (10) and the intermediate region (30i). The step of irradiating with the laser light includes making the irradiation intensity of laser light for at least part of the interface between the intermediate region (30i) and the glass base (10) lower than the irradiation intensity of laser light for the interface between the flexible substrate regions (30d) and the glass base (10).

A method includes positioning a discrete component assembly on a support fixture of a component transfer system, the discrete component assembly including a dynamic release tape including a flexible support layer, and a dynamic release structure disposed on the flexible support layer, and a discrete component adhered to the dynamic release tape. The method includes irradiating the dynamic release structure to release the discrete component from the dynamic release tape.

Various implementations of a method of forming a semiconductor package may include forming a plurality of notches into the first side of a semiconductor substrate; forming an organic material over the first side of the semiconductor substrate and the plurality of notches; thinning a second side of the semiconductor substrate opposite the first side one of to or into the plurality of notches; stress relief etching the second side of the semiconductor substrate; applying a backmetal over the second side of the semiconductor substrate; removing one or more portions of the backmetal through jet ablating the second side of the semiconductor substrate; and singulating the semiconductor substrate through the permanent coating material into a plurality of semiconductor packages.