An apparatus for manufacturing an element array includes a substrate hold means, a laser radiation device, and a collection mechanism. The substrate hold means holds a substrate including an adhesive layer on which elements are attached in a predetermined array while a surface of the adhesive layer is inclined relative to a horizontal surface at a predetermined angle. The laser radiation device radiates a laser to a specific element among the elements attached on the adhesive layer. The collection mechanism is disposed below the substrate and configured to receive the specific element falling by the laser radiation.

The present disclosure provides a laser lift-off method for separating substrate and semiconductor-epitaxial structure, which includes: providing at least one semiconductor device, wherein the semiconductor device includes a substrate and at least one semiconductor-epitaxial structure disposed in a stack-up manner; irradiating a laser onto an edge area of the semiconductor device to separate portions of the substrate and the semiconductor-epitaxial structure in the edge area; and pressing against the edge area of the semiconductor device vis a pressing device, then irradiating the laser onto an inner area of the semiconductor device to separate portions of the substrate and the semiconductor-epitaxial structure in the inner area wherein gas is generated during separating the portions of the substrate and the semiconductor-epitaxial structure in the inner area and evacuated from the edge area, to prevent damage of the semiconductor-epitaxial structure during the separating process.

A wafer is positioned in an opening of a first frame. The wafer is pressure-bonded at one surface thereof to a first tape together with the first frame, onto a second tape pressure-bonded to a second frame. The wafer is processed by pressure-bonding the second tape, which is pressure-bonded to the second frame having an outer diameter smaller than an inner diameter of the opening of the first frame, to another surface of the wafer, cutting the first tape along an outer periphery of the second frame, imparting an external stimulus to the first tape to lower a pressure-bonding force with which the first tape is pressure-bonded to the one surface of the wafer, and peeling off the first tape from the one surface of the wafer pressure-bonded to the second tape.

Laser lift off systems and methods overlap irradiation zones to provide multiple pulses of laser irradiation per location at the interface between layers of material to be separated. To overlap irradiation zones, the laser lift off systems and methods provide stepwise relative movement between a pulsed laser beam and a workpiece. The laser irradiation may be provided by a non-homogeneous laser beam with a smooth spatial distribution of energy across the beam profile. The pulses of laser irradiation from the non-homogenous beam may irradiate the overlapping irradiation zones such that each of the locations at the interface is exposed to different portions of the non-homogeneous beam for each of the multiple pulses of the laser irradiation, thereby resulting in self-homogenization. Thus, the number of the multiple pulses of laser irradiation per location is generally sufficient to provide the self-homogenization and to separate the layers of material.

A system is disclosed, which comprises a component carrier having a first side, and a second side opposite the first side; and a light source to couple light into the carrier. In an example, the carrier is to propagate, through internal reflection, at least a portion the light to both the first and second sides of the carrier. The portion of light may be sufficient to release a first component and second component affixed to the first and second sides of the carrier via a first photosensitive layer and second photosensitive layer, respectively.

A processing apparatus includes a wafer carrying-out unit, a wafer table that supports a wafer carried out, a frame carrying-out unit, a frame table that supports an annular frame carried out, a tape sticking unit that sticks a tape to the frame, a tape-attached frame conveying unit, a tape pressure bonding unit that executes pressure bonding of the tape of a tape-attached frame to a back surface of the wafer, a frame unit carrying-out unit, and a beveled part removing unit that cuts and removes, in a ring manner, a beveled part formed in an outer circumferential surplus region from the wafer of a frame unit.

Various implementations of a method of forming a semiconductor package may include forming a plurality of notches into the first side of a semiconductor substrate; forming an organic material over the first side of the semiconductor substrate and the plurality of notches; thinning a second side of the semiconductor substrate opposite the first side one of to or into the plurality of notches; stress relief etching the second side of the semiconductor substrate; applying a backmetal over the second side of the semiconductor substrate; removing one or more portions of the backmetal through jet ablating the second side of the semiconductor substrate; and singulating the semiconductor substrate through the permanent coating material into a plurality of semiconductor packages.

Apparatuses and methods adapted for removing a layer of paint, sealant, or adhesive from a surface of an article, including wooden, metal, plaster, stone, and brick articles. The apparatuses are provided with a module comprising at least one carbon infrared emitter bulb that generates short-wavelength infrared radiation. The module has an opening through which the infrared radiation is emitted from the module, and the intensity and wavelengths of the infrared radiation are controlled to selectively attain temperatures in a range of about 90 to 375° C. at the surface of the article when located a distance of about 5 to 15 centimeters from the opening of the module.

The present disclosure provides a laser lift-off method for separating substrate and semiconductor-epitaxial structure, which includes: providing at least one semiconductor device, wherein the semiconductor device includes a substrate and at least one semiconductor-epitaxial structure disposed in a stack-up manner; irradiating a laser onto an edge area of the semiconductor device to separate portions of the substrate and the semiconductor-epitaxial structure in the edge area; and pressing against the edge area of the semiconductor device vis a pressing device, then irradiating the laser onto an inner area of the semiconductor device to separate portions of the substrate and the semiconductor-epitaxial structure in the inner area wherein gas is generated during separating the portions of the substrate and the semiconductor-epitaxial structure in the inner area and evacuated from the edge area, to prevent damage of the semiconductor-epitaxial structure during the separating process.

Laser lift off systems and methods overlap irradiation zones to provide multiple pulses of laser irradiation per location at the interface between layers of material to be separated. To overlap irradiation zones, the laser lift off systems and methods provide stepwise relative movement between a pulsed laser beam and a workpiece. The laser irradiation may be provided by a non-homogeneous laser beam with a smooth spatial distribution of energy across the beam profile. The pulses of laser irradiation from the non-homogenous beam may irradiate the overlapping irradiation zones such that each of the locations at the interface is exposed to different portions of the non-homogeneous beam for each of the multiple pulses of the laser irradiation, thereby resulting in self-homogenization. Thus, the number of the multiple pulses of laser irradiation per location is generally sufficient to provide the self-homogenization and to separate the layers of material.