After an intermediate region and a flexible substrate region of a plastic film of a multilayer stack are divided, the interface between the flexible substrate region and a glass base is irradiated with laser light. The multilayer stack is separated into the first portion and the second portion while the multilayer stack is kept in contact with the stage. The first portion includes a plurality of OLED devices in contact with the stage. The OLED devices include a plurality of functional layer regions and the flexible substrate region. The second portion includes the glass base and the intermediate region. The step of irradiating with the laser light includes forming the laser light from a plurality of arranged laser light sources and temporally and spatially modulating a power of the plurality of laser light sources according to a shape of the flexible substrate region of the synthetic resin film.

A method is provided for decomposition of a polymeric article, wherein the polymeric article contains a polymer and one or more energy modulation agents, by applying an applied energy to the polymeric article, wherein the one or more energy modulation agents convert the applied energy into an emitted energy sufficient to cause bond destruction within the polymer.

According to one embodiment, a chip transfer member includes a light-transmitting portion and a metal portion. The light-transmitting portion has a light incident surface, a light-emitting surface, and a side surface. The metal portion is provided at the side surface of the light-transmitting portion.

A product-substrate-to-carrier-substrate bond with a product substrate, which is bonded to a carrier substrate via a connection layer, wherein a soluble layer is arranged between the connection layer and the product substrate, and wherein a) the soluble layer is soluble due to an interaction with an electromagnetic radiation of a radiation source, and b) the connection layer and the carrier substrate are both at least predominantly transparent to the electromagnetic radiation transmitted through the connection layer, wherein a material of the soluble layer and the electromagnetic radiation are chosen such that an increase of temperature of the soluble layer caused by the interaction with the electromagnetic radiation is less than 50 C.

According to a flexible OLED device production method of the present disclosure, after an intermediate region (30i) and a flexible substrate region (30d) of a plastic film (30) of a muitilayer stack (100) are divided, the interface between the flexible substrate region (30d) and a glass base (10) is irradiated with laser light. The multilayer stack (100) is separated into the first portion (110) and the second portion (120) while the multilayer stack (100) is kept in contact with the stage (210). The first portion (110) includes a plurality of OLED devices (1000) which are in contact with the stage (210). The OLED devices (1000) include a plurality of functional layer regions (20) and the flexible substrate region (30d). The second portion (120) includes the glass base (10) and the intermediate region (30i). The step of irradiating with the laser light includes forming the laser light from a plurality of arranged laser light sources and temporally and spatially modulating a power of the plurality of laser light sources according to a shape of the flexible substrate region of the synthetic resin film such that the irradiation intensity of the laser light for at least part of the interface between the intermediate region (30i) and the glass base (10) is lower than the irradiation intensity of the laser light for the interface between the flexible substrate region (30d) and the glass base (10).

According to a flexible OLED device production method of the present disclosure, after an intermediate region (30i) and flexible substrate regions (30d) of a plastic film (30) of a multilayer stack (100) are divided from one another, the interface between the flexible substrate regions (30d) and a glass base (10) is irradiated with laser light. The multilayer stack (100) is separated into a first portion (110) and a second portion (120) while the multilayer stack (100) is in contact with a stage (210). The first portion (110) includes a plurality of OLED devices (1000) which are in contact with the stage (210). The OLED devices (1000) include a plurality of functional layer regions (20) and the flexible substrate regions (30d). The second portion (120) includes the glass base (10) and the intermediate region (30i). The step of irradiating with the laser light includes making the irradiation intensity of laser light for at least part of the interface between the intermediate region (30i) and the glass base (10) lower than the irradiation intensity of laser light for the interface between the flexible substrate regions (30d) and the glass base (10).

Various implementations of a method of forming a semiconductor package may include forming a plurality of notches into the first side of a semiconductor substrate; forming an organic material over the first side of the semiconductor substrate and the plurality of notches; thinning a second side of the semiconductor substrate opposite the first side one of to or into the plurality of notches; stress relief etching the second side of the semiconductor substrate; applying a backmetal over the second side of the semiconductor substrate; removing one or more portions of the backmetal through jet ablating the second side of the semiconductor substrate; and singulating the semiconductor substrate through the permanent coating material into a plurality of semiconductor packages.

[Object] An object of the present invention is to provide an easily peelable adhesive tape that has a good peel adhesive strength when attached to an adherend and that can be easily peeled after being irradiated with active energy rays. [Solution] The present invention is directed to an easily peelable adhesive tape that has, on at least one surface of a base material, an active energy ray-curable layer having a storage modulus (G.sub.a25) of less than 1.010.sup.6 Pa as measured at a temperature of 25 C. and a frequency of 1.0 Hz and has an adhesive layer on the surface side of the active energy ray-curable layer.

A peeling apparatus includes an ingot holding unit holding an ingot in a hanging state where a portion of the ingot to be peeled off as the wafer is directed downwardly, a water container containing water therein, an ultrasonic unit immersed in the water in the water container, a moving unit moving the ingot holding unit vertically into a position where the ingot holding unit faces the ultrasonic unit and at least the portion of the ingot to be peeled off as the wafer is immersed in the water in the water container, and a nozzle ejecting water to the portion of the ingot to be peeled off as the wafer thereby to promote the peeling of the wafer from the ingot.

The present disclosure provides a method for separation of an organic film from a solar cell module, the separation method including the following steps: treating the solar cell module by a heat treatment in combination with a ultrasonic treatment; and performing separation of the treated solar cell module by buoyancy, thereby achieving the separation of the organic film from the module. The present disclosure uses the heat treatment in combination with the ultrasonic treatment to separate the organic film of the solar cell module, so that a stripping rate of the solar cell module reaches 97% or more, and the organic film after detachment does not adhere to the active material, the active material layer remains intact, the surface is clean and has no gelatin spots, and a loss rate is 1% or less, and thus the method is efficient, convenient, and easy to industrialize.