A superalloy target wherein the superalloy target has a polycrystalline structure of random grain orientation, the average grain size in the structure is smaller than 20 m, and the porosity in the structure is smaller than 10%. Furthermore, the invention includes a method of producing a superalloy target by powder metallurgical production, wherein the powder-metallurgical production starts from alloyed powder(s) of a superalloy and includes the step of spark plasma sintering (SPS) of the alloyed powder(s).

A device including a hard shield material; a layer including aluminum or copper; and a silicon layer having a first thickness is disclosed. The device can also include a silicon layer having a second thickness. A method of making the device is also disclosed.

A superalloy target wherein the superalloy target has a polycrystalline structure of random grain orientation, the average grain size in the structure is smaller than 20 ?m, and the porosity in the structure is smaller than 10%. Furthermore, the invention includes a method of producing a superalloy target by powder metallurgical production, wherein the powder-metallurgical production starts from alloyed powder (s) of a superalloy and includes the step of spark plasma sintering (SPS) of the alloyed powder (s).

Method for producing a composite structure comprising the direct bonding of at least one first wafer with a second wafer, and comprising a step of initiating the propagation of a bonding wave, where the bonding interface between the first and second wafers after the propagation of the bonding wave has a bonding energy of less than or equal to 0.7 J/m.sup.2. The step of initiating the propagation of the bonding wave is performed under one or more of the following conditions: placement of the wafers in an environment at a pressure of less than 20 mbar and/or application to one of the two wafers of a mechanical pressure of between 0.1 MPa and 33.3 MPa. The method further comprises, after the step of initiating the propagation of a bonding wave, a step of determining the level of stress induced during bonding of the two wafers, the level of stress being determined on the basis of a stress parameter Ct calculated using the formula Ct=Rc/Ep, where: Rc corresponds to the radius of curvature (in km) of the two-wafer assembly and Ep corresponds to the thickness (in m) of the two-wafer assembly. The method further comprises a step of validating the bonding when the level of stress Ct determined is greater than or equal to 0.07.

Described herein are methods of preparing nanolaminated brass coatings and components having desirable and useful properties. Also described are nanolaminated brass components and plastic and polymeric substrates coated with nanolaminated brass coatings having desirable and useful properties.

Disclosed is a coating for protecting a component against high temperatures and aggressive media, which coating has at least one subregion whose main constituent is chromium. The layer additionally comprises aluminum, the chromium content at least in the subregion in which chromium is the main constituent being greater than 30% by weight and the aluminum content being greater than or equal to 5% by weight. The invention further provides a process for producing such a coating, comprising chromizing the surface to be coated and subsequently alitizing the chromium-rich layer produced during chromizing.

A method for depositing material layers on a workpiece made of a material which contains a titanium aluminide includes the steps of: preparing the workpiece; heating the workpiece in a localized region by induction to a predefined preheating temperature; and depositing an additive, preferably in powder form, on the heated surface of the workpiece by build-up welding, in particular laser build-up welding, plasma build-up welding, micro-plasma build-up welding, TIG build-up welding or micro-TIG build-up welding; the additive including a titanium aluminide.