Compositions are provided that exhibit an austenitic nickel microstructure. The compositions comprise Ni, Cr, Mo and at least one element selected from the group consisting of Al, Si, and Ti. Feedstock having the composition may be in the form of a cored wire or wires, a solid wire or wires, or a powder.

An electrodeposited nano-twins copper layer, a method of fabricating the same, and a substrate comprising the same are disclosed. According to the present invention, at least 50% in volume of the electrodeposited nano-twins copper layer comprises plural grains adjacent to each other, wherein the said grains are made of stacked twins, the angle of the stacking directions of the nano-twins between one grain and the neighboring grain is between 0 to 20 degrees. The electrodeposited nano-twins copper layer of the present invention is highly reliable with excellent electro-migration resistance, hardness, and Young's modulus. Its manufacturing method is also fully compatible to semiconductor process.

An article includes a substrate and a barrier layer on the substrate. The barrier layer includes a matrix, diffusive particles dispersed in the matrix, and gettering particles dispersed in the matrix. The gettering particles include at least one alloyed metal silicide. A composite material and a method of fabricating an article are also disclosed.

A hot-pressed member includes a steel sheet, a Ni-diffusion region present in a surface layer of the steel sheet, and an intermetallic compound layer and a ZnO layer which are provided in order on the Ni-diffusion region, the intermetallic compound layer corresponding to a phase present in a phase equilibrium diagram of a ZnNi alloy, wherein a spontaneous immersion potential indicated in a 0.5 M NaCl aqueous air-saturated solution at 25 C.5 C. is 600 to 360 mV based on a standard hydrogen electrode.

Method for producing a composite structure comprising the direct bonding of at least one first wafer with a second wafer, and comprising a step of initiating the propagation of a bonding wave, where the bonding interface between the first and second wafers after the propagation of the bonding wave has a bonding energy of less than or equal to 0.7 J/m.sup.2. The step of initiating the propagation of the bonding wave is performed under one or more of the following conditions: placement of the wafers in an environment at a pressure of less than 20 mbar and/or application to one of the two wafers of a mechanical pressure of between 0.1 MPa and 33.3 MPa. The method further comprises, after the step of initiating the propagation of a bonding wave, a step of determining the level of stress induced during bonding of the two wafers, the level of stress being determined on the basis of a stress parameter Ct calculated using the formula Ct=Rc/Ep, where: Rc corresponds to the radius of curvature (in km) of the two-wafer assembly and Ep corresponds to the thickness (in m) of the two-wafer assembly. The method further comprises a step of validating the bonding when the level of stress Ct determined is greater than or equal to 0.07.

An engineered substrate includes a support structure comprising a polycrystalline ceramic core, an adhesion layer coupled to the polycrystalline ceramic core, and a barrier layer coupled to the adhesion layer. The engineered substrate also includes an bonding layer coupled to the support structure, a substantially single crystal layer coupled to the bonding layer, and an epitaxial gallium nitride layer coupled to the substantially single crystal layer.

A slurry composition for aluminizing a superalloy component is provided, wherein the slurry includes an organic binder and a solid content including at least aluminum, silicon, and at least one of hafnium or yttrium.

A part includes a base material, a colored layer, an intermediate layer, and a water-repellent-surface layer. The colored layer contains 35 at % to 99 at % of C, 0 at % to less than 40 at % of Cr, 0 at % to less than 15 at % of N, and more than 0 at % to less than 15 at % of O. The intermediate layer contains at least one metal atom selected from Cr, Zr, and Si; and an oxygen atom. The intermediate layer exhibits a sputtering time of 0.5 minutes or more to 9 minutes or less.

The present disclosure provides a device having a doped active region disposed in a substrate. The doped active region having an elongate shape and extends in a first direction. The device also includes a plurality of first metal gates disposed over the active region such that the first metal gates each extend in a second direction different from the first direction. The plurality of first metal gates includes an outer-most first metal gate having a greater dimension measured in the second direction than the rest of the first metal gates. The device further includes a plurality of second metal gates disposed over the substrate but not over the doped active region. The second metal gates contain different materials than the first metal gates. The second metal gates each extend in the second direction and form a plurality of respective N/P boundaries with the first metal gates.

A method for producing a hot-pressed member includes heating a coated steel sheet, which includes, on a surface thereof, a ZnNi alloy coating layer containing 10% by mass or more and less than 13% by mass of Ni at a coating weight of over 50 g/m.sup.2 per side of the steel sheet, in a temperature region of an Ac.sub.3 transformation point to 1200 C. at an average heating rate of 12 C./second or more, and then hot-pressing the steel sheet.