The invention provides a light emitting apparatus including a projector color wheel and a light emitting diode (LED) device using a composite material, a method of manufacturing the composite material, and an optical film. The stability of the composite material has been greatly improved. Light emitting devices using the composite material have wide color gamut.

The invention provides a light emitting apparatus including a projector color wheel and a light emitting diode (LED) device using a composite material, a method of manufacturing the composite material, and an optical film. The stability of the composite material has been greatly improved. Light emitting devices using the composite material have wide color gamut.

The present invention provides polymer composites, such as films, having dispersed therein quantum dots, wherein the polymer comprises (b) polymerized units of a first compound comprising from one to 6 thiol groups, the compound having a molecular weight from 300 to 20,000 and having at least one continuous acyclic hydrocarbyl chain of at least three carbon atoms, or, preferably, at least 5 carbon atoms; and (c) polymerized units of a second compound having a molecular weight from 100 to 750 and comprising at least two polymerizable vinyl groups as part of a (meth)acrylate ester group or attached directly to an aromatic ring and, wherein the molecular weight of the first compound minus the molecular weight of the second compound is at least 100. The polymer composites provide more stably dispersed and durable quantum dot compositions for use in, for example, display devices.

A quantum dot, a color conversion panel, and a display device, the quantum dot including a core; and a shell layer positioned outside of the core, wherein at least one of the core and the shell layer is doped with aluminum, silicon, titanium, magnesium, or zinc, and the core includes a Group III-V compound.

A dispersion of nanoplatelets or particles suspended in a carrier liquid is disclosed. The nanoplatelets or particles, e.g. graphene nanoplatelets, are derived from a layered material. The loading amount of nanoplatelets or particles in the dispersion is at least 20 mg nanoplatelets or particles per 1 ml of dispersion. The dispersion optionally further including a dispersant, the volume ratio of dispersant to the nanoplatelets or particles being less than 1:1. A process for manufacturing the dispersion includes mixing the carrier liquid and the nanoplatelets or particles under high shear conditions. The dispersion can be used as an ink system, as a functional additive within an ink, coating or adhesive formulation, and/or in the manufacture of a nanoplatelet-polymer composite or a particle-polymer composite.

An object of the present invention is to provide a semiconductor nanoparticle having high emission efficiency and excellent durability; a method of producing the same; and a dispersion liquid and a film obtained by using a semiconductor nanoparticle. The semiconductor nanoparticle of the present invention is a semiconductor nanoparticle in which oxygen, zinc, and sulfur are detected by X-ray photoelectron spectroscopy analysis and a peak (I.sub.CH3) which is derived from a hydrocarbon group and present in a range of 2800 cm.sup.1 to 3000 cm.sup.1 and a peak (I.sub.COO) which is derived from COO.sup. and present in a range of 1400 cm.sup.1 to 1600 cm.sup.1 are detected by Fourier transform infrared spectroscopy analysis.

Methods for producing nanostructures, particularly Group III-V semiconductor nanostructures, are provided. The methods include use of novel Group III and/or Group V precursors, novel surfactants, oxide acceptors, high temperature, and/or stable co-products. Related compositions are also described. Methods and compositions for producing Group III inorganic compounds that can be used as precursors for nanostructure synthesis are provided. Methods for increasing the yield of nanostructures from a synthesis reaction by removal of a vaporous by-product are also described.

Methods for producing nanostructures, particularly Group III-V semiconductor nanostructures, are provided. The methods include use of novel Group III and/or Group V precursors, novel surfactants, oxide acceptors, high temperature, and/or stable co-products. Related compositions are also described. Methods and compositions for producing Group III inorganic compounds that can be used as precursors for nanostructure synthesis are provided. Methods for increasing the yield of nanostructures from a synthesis reaction by removal of a vaporous by-product are also described.