Examples are disclosed that relate to an ultrafiltration system for quantum-dot (QD) purification. The ultrafiltration system comprises a pump having a low-pressure side and a high-pressure side, a size-exclusion membrane having a low-pressure side and a high-pressure side, and an inlet/outlet arrangement. An inlet arranged on the high-pressure side of the size-exclusion membrane is coupled fluidically to the high-pressure side of the pump. A product-enriched outlet is arranged on the high-pressure side of the size-exclusion membrane, fluidically downstream of the inlet. A product-depleted outlet is arranged on the low-pressure side of the size-exclusion membrane.

Fabricating a semiconductor structure including forming a nanocrystalline core from a first semiconductor material, forming a nanocrystalline shell from a second, different, semiconductor material that at least partially surrounds the nanocrystalline core, wherein the nanocrystalline core and the nanocrystalline shell form a quantum dot. Fabrication further involves forming an insulator layer encapsulating the quantum dot to create a coated quantum dot, and forming an additional insulator layer on the coated quantum dot using an Atomic Layer Deposition (ALD) process.

Exemplary Embodiments of the invention address the problem of providing semiconductor single-layer carbon nanotubes in which the light emission energy thereof is lowered by approximately 300 meV, and a method for manufacturing the same. In one embodiments of the invention, by applying a method for directly irradiating semiconductor single-layer carbon nanotubes with ultraviolet light in atmospheric air, ozone is generated in the atmosphere, a gram amount of oxygen atoms is introduced to the semiconductor single-layer carbon nanotubes, and semiconductor single-layer carbon nanotubes in which the light emission energy thereof is lowered by approximately 300 meV.

The present invention relates to a semiconductor nanocrystal-siloxane composite resin composition and a preparation method thereof, and more specifically to a semiconductor nanocrystal-siloxane composite resin composition in which semiconductor nanocrystals are dispersed and bonded to a siloxane composite resin obtained by condensation reaction of a mixture of one or more organoalkoxysilanes or organosilanediol, and a preparation method thereof. The cured product of the semiconductor nanocrystal-siloxane resin composition of the present invention can be prepared as a coating, a film, a flake, etc., and the inherent characteristics of the semiconductor nanocrystal are maintained in a high temperature and high humidity environment and the reliability of the application devices is improved.

Novel semiconductor nanoparticles and methods of biosynthesizing the same are provided by biosynthetic processes using cell-free supernatants and isolated enzymes.

Quantum dot polymer composites for on-chip light emitting diode applications are described. In an example, a composite for on-chip light emitting diode application includes a polymer matrix, a plurality of quantum dots dispersed in the polymer matrix, and a base dispersed in the polymer matrix.

The present invention provides a curable composition containing semiconductor nanoparticles, which contains luminescent semiconductor nanoparticles having good dispersibility and has low viscosity and excellent formability. Al curable composition containing semiconductor nanoparticles, contains: a monofunctional (meth)acrylate compound (a) having a tricyclodecane structure; at least one compound (h) selected from among (meth)acrylate compounds (b1) having two or more (meth)acryloyloxy groups and compounds (b2) represented by formula (1); a polymerization initiator (c); and luminescent semiconductor nanoparticles (d). H.sub.2C═C(R.sup.1)—CH.sub.2—O—CH.sub.2—C(R.sup.2)═CH.sub.2 (1) (In formula (1). R.sup.1 and R.sup.2 each independently represent a hydrogen atom,an alkyl group having 1 to 4 carbon atoms, or an organic group having 4 to 10 carbon atoms having an ester bond)

A semiconductor light emitting element is provided. The semiconductor light emitting element has a semiconductor stack, an n-side conductor layer, a p-side conductor layer, a dielectric multilayered film, an n-side reflective layer and a p-side reflective layer, disposed in that order. The n-side and p-side reflective layers contain Ag as a major component and contain particles of at least one selected from an oxide, a nitride, and a carbide.

Nanostructure array optoelectronic devices are disclosed. The optoelectronic device may have one or more intermediate electrical contacts that are physically and electrically connected to sidewalls of the array of nanostructures. The contacts may allow different photo-active regions of the optoelectronic device to be independently controlled. For example, one color light may be emitted or detected independently of another using the same group of one or more nanostructures. The optoelectronic device may be a pixilated device that may serve as an LED display or imaging sensor. The pixilated device may have an array of nanostructures with alternating rows and columns of sidewall electrical contacts at different layers. A pixel may be formed at the intersection of a row contact and a column contact. As one example, a single group of one or more nanostructures has a blue sub-pixel, a green sub-pixel, and a red sub-pixel.

Highly luminescent nanostructures, particularly highly luminescent quantum dots, comprising a nanocrystal core and thick shells of ZnSe and ZnS, are provided. The nanostructures may have one or more gradient ZnSe.sub.xS.sub.1-x monolayers between the ZnSe and ZnS shells, wherein the value of x decreases gradually from the interior to the exterior of the nanostructure. Also provided are methods of preparing the nanostructures comprising a high temperature synthesis method. The thick shell nanostructures of the present invention display increased stability and are able to maintain high levels of photoluminescent intensity over long periods of time. Also provided are nanostructures with increased blue light absorption.