The present disclosure provides a single crystal pulling apparatus Hot-Zone structure, a single crystal pulling apparatus and a crystal ingot. The single crystal pulling apparatus Hot-Zone structure is applied to a single crystal pulling apparatus. The single crystal pulling apparatus includes a puller body and a crucible provided in the center of the puller body. The single crystal pulling apparatus Hot-Zone structure includes: a side heater provided in a periphery of the crucible, and a diversion assembly provided between the side heater and the crucible, and configured to form a gas flow passage with an outer wall of the crucible, to discharge a gas to the outside of the puller body.

Disclosed is a single-crystal ingot manufacturing apparatus, which includes a crucible in which a melt is accommodated, a heater configured to heat the crucible, a heat shield member configured to shield radiant heat from the heater and the melt, and a neck cover configured to encompass a seed crystal unit above the crucible with being introduced into an opening of the heat shield member, the radiant heat being not shielded in the opening, the neck cover being vertically moved in linkage to vertical movement of the seed crystal unit within a predetermined range.