A subject of present invention is to enable reducing, even in growth at a high C/Si ratio, contamination by different polytypes with respect to a silicon carbide epitaxial wafer having a low off-angle, and to provide the silicon carbide epitaxial wafer which enables forming a reliable high voltage silicon carbide semiconductor element.

The silicon carbide epitaxial wafer of the present invention is a silicon carbide epitaxial wafer comprising an epitaxially grown layer disposed on a silicon carbide substrate having an -type crystal structure and an off-angle tilted at an angle of more than 0 and less than 4 from a (0001) Si plane or a (000-1) C plane, wherein a region of a step bunching including five to ten bunched steps of 1 nm in height occupies 90% or more of the surface of the silicon carbide substrate.

A window for a display device that includes: a base substrate; a first coating layer disposed on a first surface of the base substrate; and a second coating layer disposed on a second surface that overlaps the first surface of the base substrate, wherein the base substrate further includes a vertical surface perpendicular to the first surface and the second surface, and the first coating layer overlaps the vertical surface. The impact resistance of the window is improved through the first coating layer covering the rear surface and the vertical surface of the base substrate.

A window for a display device that includes: a base substrate; a first coating layer disposed on a first surface of the base substrate; and a second coating layer disposed on a second surface that overlaps the first surface of the base substrate, wherein the base substrate further includes a vertical surface perpendicular to the first surface and the second surface, and the first coating layer overlaps the vertical surface. The impact resistance of the window is improved through the first coating layer covering the rear surface and the vertical surface of the base substrate.