A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

A method for producing a wired circuit board, the method including the steps of: a first step of providing an insulating layer having an opening penetrating in the thickness direction at one side surface in the thickness direction of the metal plate, a second step of providing a first barrier layer at one side surface in the thickness direction of the metal plate exposed from the opening by plating, a third step of providing a second barrier layer continuously at one side in the thickness direction of the first barrier layer and an inner surface of the insulating layer facing the opening, a fourth step of providing a conductor layer so as to contact the second barrier layer, and a fifth step of removing the metal plate by etching.

A method for manufacturing a piezoelectric actuator is disclosed that includes forming a vibration plate, forming a plurality of electrodes on the vibration plate, forming a piezoelectric layer on the electrodes, and forming a common electrode on the piezoelectric layer.

A nerve cuff electrode device comprising a cuff body having a smart memory polymer layer with a rigid configuration at room temperature and a softened configuration at about 37° C. The smart memory polymer layer has a trained curved region with a radius of curvature of about 3000 microns or less. A plurality of thin film electrodes located on the smart memory polymer layer. The thin film electrodes include discrete titanium nitride electrode sites that are located in the trained curved region. An exposed surface of each of the discrete titanium nitride electrode sites has a charge injection capacity of about 0.1 mC/cm.sup.2 or greater. Methods or manufacturing and using the device are also disclosed.

A method of manufacturing a semiconductor package includes mounting and electrically connecting a semiconductor die to a substrate. The semiconductor die and the substrate are encapsulated to form an encapsulation. Via holes are laser-ablated through the encapsulation and conductive material is deposited within the via holes to form vias. A first buildup dielectric layer is formed on the encapsulation. Laser-ablated artifacts are laser-ablated in the first buildup layer. The laser-ablated artifacts in the first buildup layer are filled with a first metal layer to form a first electrically conductive pattern in the first build up layer. The operations of forming a buildup layer, forming laser-ablated artifacts in the buildup layer, and filling the laser-ablated artifacts with an electrically conductive material to form an electrically conductive pattern can be performed any one of a number of times to achieve the desired redistribution.

A method of manufacturing a semiconductor package includes mounting and electrically connecting a semiconductor die to a substrate. The semiconductor die and the substrate are encapsulated to form an encapsulation. Via holes are laser-ablated through the encapsulation and conductive material is deposited within the via holes to form vias. A first buildup dielectric layer is formed on the encapsulation. Laser-ablated artifacts are laser-ablated in the first buildup layer. The laser-ablated artifacts in the first buildup layer are filled with a first metal layer to form a first electrically conductive pattern in the first build up layer. The operations of forming a buildup layer, forming laser-ablated artifacts in the buildup layer, and filling the laser-ablated artifacts with an electrically conductive material to form an electrically conductive pattern can be performed any one of a number of times to achieve the desired redistribution.

The present invention relates to an electronic module. In particular, to an electronic module which includes one or more components embedded in an installation base. The electronic module can be a module like a circuit board, which includes several components, which are connected to each other electrically, through conducting structures manufactured in the module. The components can be passive components, microcircuits, semiconductor components, or other similar components. Components that are typically connected to a circuit board form one group of components. Another important group of components are components that are typically packaged for connection to a circuit board. The electronic modules to which the invention relates can, of course, also include other types of components.

Multilayer electrodes, electrode systems, and stimulation systems are disclosed. An electrode may include a conductive layer with a unitary tail, a connector disposed on a distal end of the tail, and a nonconductive top layer disposed along a top portion of the conductive layer. An electrode may include a magnetic lead connector socket, or a receptacle formed by a depression in the conductive layer configured to receive a male connector. An electrode system may include a plurality of conductive zones and a plurality of connectors. A stimulation system may include an electronics layer in electrical contact with a conductive layer via a puncture connection, and may provide an iontophoretic treatment followed by a TENS treatment. Other electrodes, systems and methods are also disclosed.

A nerve cuff electrode device comprising a cuff body having a smart memory polymer layer with a rigid configuration at room temperature and a softened configuration at about 37 C. The smart memory polymer layer has a trained curved region with a radius of curvature of about 3000 microns or less. A plurality of thin film electrodes located on the smart memory polymer layer. The thin film electrodes include discrete titanium nitride electrode sites that are located in the trained curved region. An exposed surface of each of the discrete titanium nitride electrode sites has a charge injection capacity of about 0.1 mC/cm2 or greater. Methods or manufacturing and using the device are also disclosed.

A mother substrate that enables winding cores to be obtained in a manner in which the mother substrate is divided along x-direction division lines and y-direction division lines is prepared. Subsequently, x-direction division grooves are formed along the x-direction division lines on a first main surface of the mother substrate, y-direction division grooves are formed along the y-direction division lines on the first main surface, and shallow bottom surface exposure grooves, for exposing surfaces that are to be core portion bottom surfaces, are formed on the first main surface. The mother substrate is divided by performing a flattening process on a second main surface of the mother substrate that is opposite the first main surface until the second main surface reaches the x-direction division grooves and the y-direction division grooves to obtain the winding cores that are separated from each other.