Disclosed is a bonding structure that includes an intermetallic compound crystal composed of Sn and Cu, and, an Sn alloy matrix composed of Sn and Cu, being intended for bonding a metal body or an alloy body, the intermetallic compound crystal forming an endotaxial junction with the Sn alloy matrix, and the Sn alloy matrix and/or the intermetallic compound crystal forming an epitaxial junction with the metal body or the alloy body.

Provided is a laminate of a sintered body produced by sintering a copper powder paste and a ceramic substrate, which has improved adhesion between the sintered body and the ceramic substrate. A laminate with a copper powder paste sintered body laminated on a ceramic layer, the laminate comprising portions where one or more elements selected from Si, Ti and Zr derived from a copper powder surface treatment agent are together present with a thickness in a range of from 5 to 15 nm in boundaries between the copper powder paste sintered body and the ceramic layer, when observing the boundaries by scanning the laminate with STEM over 100 nm across the boundaries in a thickness direction of the laminate.

A sliding part with a wear resistant coating includes a sliding part, and a wear resistant coating provided on a sliding surface of the sliding part, and made of a cobalt alloy containing chromium and silicon. In the wear resistant coating, oxide particles are dispersed which include an oxide containing chromium and silicon, and have a particle size of 100 m or less when a cross section of the wear resistant coating is observed using an optical microscope with a magnification of 100 times.

A plating processing method of a gripping surface of a gripping tool includes: temporarily and evenly fixing a plurality of first diamond grains having a uniform first grain diameter; adhering the first diamond grains by depositing a metal containing nickel on a gripping surface in a uniform thickness after the first diamond grains have been temporarily fixed; placing a plurality of second diamond grains having a second grain diameter on a metal surface of the gripping surface on which first diamond grains are not present; and adhering the second diamond grains by further depositing a metal containing nickel within a second plating solution on the metal surface in a uniform thickness that does not exceed the first diameter grain and the second diameter grain until a position relationship between the metal surface and the second diamond grains is not displaced even when the gripping tool is moved.

A silver film for die attachment in the field of microelectronics, wherein the silver film is a multilayer structure comprising a reinforcing silver foil layer between two layers of sinterable particles. Each layer of sinterable particles comprises a mixture of sinterable silver particles and reinforcing particles. The reinforcing particles comprise glass and/or carbon and/or graphite particles. A method for die attachment using a silver film.

A method of manufacturing an article comprises depositing a metallic powder on a substrate or a worktable; fusing the metallic powder according to a preset pattern; and adjusting a composition of the metallic powder or a condition to fuse the metallic powder or a combination thereof to additively form an article such that the article has a first portion and a second portion, wherein the first portion has one or more of the following properties different than those of the second portion: corrosion rate; tensile strength; compressive strength; modulus; or hardness.

Materials for die attachment such as silver sintering films may include reinforcing, modifying particles for enhanced performance. Methods for die attachment may involve the of such materials.

Provided is a laminate of a sintered body produced by sintering a copper powder paste and a ceramic substrate, which has improved adhesion between the sintered body and the ceramic substrate. A laminate with a copper powder paste sintered body laminated on a ceramic layer, the laminate comprising portions where one or more elements selected from Si, Ti and Zr derived from a copper powder surface treatment agent are together present with a thickness in a range of from 5 to 15 nm in boundaries between the copper powder paste sintered body and the ceramic layer, when observing the boundaries by scanning the laminate with STEM over 100 nm across the boundaries in a thickness direction of the laminate.

A porous aluminum sintered material is provided. The porous aluminum sintered material includes aluminum substrates sintered each other, wherein pillar-shaped protrusions projecting toward an outside are formed on outer surfaces of the aluminum substrates, the porous aluminum sintered material has junctions in which the aluminum substrates are bonded each other through the pillar-shaped protrusions, the junctions include a TiAl compound, and a eutectic alloy phase including Al and Si is provided on surface layers of the junctions.

A heat dissipation component for a semiconductor element includes: a composite part containing 50-80 vol % diamond powder with the remainder having metal including aluminum, the diamond powder having a particle diameter volume distribution first peak at 5-25 m and a second peak at 55-195 m. A ratio between a volume distribution area at particle diameters of 1-35 m and a volume distribution area at particle diameters of 45-205 m is 1:9 to 4:6; surface layers on both composite part principal surfaces, each of the surface layers containing 80 vol % or more metal including aluminum and having a film thickness of 0.03-0.2 mm; and a crystalline Ni layer and an Au layer on at least one of the surface layers, the crystalline Ni layer having a film thickness of 0.5-6.5 m, and the Au layer having a film thickness of 0.05 m or larger.