A method of manufacturing an external timepiece component, including: a metallic base made of a first material including titanium and/or a first titanium alloy; at least one metallic cover plate made of a second material, this second material including a second metal selected from among gold and platinum and palladium, and/or a second alloy including at least gold or platinum or palladium, this at least one cover plate being of a thickness greater than or equal to 0.5 millimeters; the at least one cover plate is welded to the base to form a bimetallic blank; and the bimetallic blank is shaped and/or machined to give the structural component its final form.

In various embodiments, electronic devices such as touch-panel displays incorporate interconnects featuring a conductor layer and, disposed above the conductor layer, a capping layer comprising an alloy of Cu and one or more refractory metal elements selected from the group consisting of Ta, Nb, Mo, W, Zr, Hf, Re, Os, Ru, Rh, Ti, V, Cr, and Ni.

A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface thereof. Containing an element that provides bonding reliability in a high-temperature environment improves the bonding reliability of the ball bonded part in high temperature. Furthermore, making an orientation proportion of a crystal orientation <100> angled at 15 degrees or less to a wire longitudinal direction among crystal orientations in the wire longitudinal direction 30% or more when measuring crystal orientations on a cross-section of the core material in a direction perpendicular to a wire axis of the bonding wire, and making an average crystal grain size in the cross-section of the core material in the direction perpendicular to the wire axis of the bonding wire 0.9 to 1.5 m provides a strength ratio of 1.6 or less.

A bonding wire includes a Cu alloy core material, and a Pd coating layer formed on the Cu alloy core material. The bonding wire contains at least one element selected from Ni, Zn, Rh, In, Ir, and Pt. A concentration of the elements in total relative to the entire wire is 0.03% by mass or more and 2% by mass or less. When measuring crystal orientations on a cross-section of the core material in a direction perpendicular to a wire axis of the bonding wire, a crystal orientation <100> angled at 15 degrees or less to a wire axis direction has a proportion of 50% or more among crystal orientations in the wire axis direction. An average crystal grain size in the cross-section of the core material in the direction perpendicular to the wire axis of the bonding wire is 0.9 m or more and 1.3 m or less.

In particular embodiments, the present disclosure provides targets including a metal layer and defining a hollow inner surface. The hollow inner surface has an internal apex. The distance between at least two opposing points of the internal apex is less than about 15 m. In particular examples, the distance is less than about 1 m. Particular implementations of the targets are free standing. The targets have a number of disclosed shaped, including cones, pyramids, hemispheres, and capped structures. The present disclosure also provides arrays of such targets. Also provided are methods of forming targets, such as the disclosed targets, using lithographic techniques, such as photolithographic techniques. In particular examples, a target mold is formed from a silicon wafer and then one or more sides of the mold are coated with a target material, such as one or more metals.

A process of preparing a plurality of nanostructures, each being composed of at least one target material is disclosed. The process comprises sequentially electrodepositing a first material and the at least one target material into pores of a porous membrane having a nanometric pore diameter, to thereby obtain within the pores nanometric rods, each of the nanometric rods having a plurality of segments where any two adjacent segments are made of different materials. The process further comprises and etching the membrane and the first material, thereby obtaining the nanostructures.

A composite metal foil and a method of manufacturing the same are provided. The composite metal foil includes at least a first metal layer and a second metal layer. The first metal layer is copper foil, nickel foil, stainless steel foil, or a combination thereof. The second metal layer is disposed on a surface of the first metal layer. A contact angle of a surface of the second metal layer to liquid lithium metal is lower than 90 degrees.

The present invention relates to a hybrid base plate and a manufacturing method therefor. Metal sheets of different materials having excellent thermal conductivity can be joined to have a thickness favorable for heat dissipation, and by arranging a metal sheet of a material with a low coefficient of thermal expansion between metal sheets with a high coefficient of thermal expansion, there is an effect of preventing warpage when manufacturing a large-area heat sink.

A bi-layer protective coating for a metal component, the bi-layer protective coating comprising a bond coating that is metallurgically fused to a substrate of the metal component, wherein the bond coating comprises one or more rare metals and a top coating that is mechanically bonded to the bond coating, wherein the top coating comprises one or more metal oxides, or one or more metal carbides.

A method of manufacturing a composite metal foil includes providing a first metal layer and forming a second metal layer on a surface of the first metal layer through electroplating. The first metal layer is copper foil, nickel foil, stainless steel foil, or a combination thereof. A contact angle of a surface of the second metal layer to liquid lithium metal is lower than 90 degrees.