In particular embodiments, the present disclosure provides targets including a metal layer and defining a hollow inner surface. The hollow inner surface has an internal apex. The distance between at least two opposing points of the internal apex is less than about 15 m. In particular examples, the distance is less than about 1 m. Particular implementations of the targets are free standing. The targets have a number of disclosed shaped, including cones, pyramids, hemispheres, and capped structures. The present disclosure also provides arrays of such targets. Also provided are methods of forming targets, such as the disclosed targets, using lithographic techniques, such as photolithographic techniques. In particular examples, a target mold is formed from a silicon wafer and then one or more sides of the mold are coated with a target material, such as one or more metals.

Provided is a production method for a layered product in which a metal film can be formed on the surface of a polyarylene sulfide (PAS) molded article with a high adhesive force by a simple step. Further, provided are: a polyarylene sulfide resin composition and a molded article that can be used in the layered product in which a metal film can be formed on the surface of the PAS molded article with a high adhesive force by a simpler step; and production methods therefor. More specifically, provided are: a polyarylene sulfide resin composition obtained by blending a polyarylene sulfide resin, a thermoplastic elastomer and/or a hydrolyzable thermoplastic resin, a carbonate, and a polyolefin-based wax; a molded article which is obtained by melt-molding the polyarylene sulfide resin composition and in which the surface is roughened; a layered product having a metal plating layer; and production methods therefor.

The process of forming a partial gold-plating pattern on a stainless substrate includes a first plating step, a second plating step, and a stripping step. In the first plating step, pretreatment is applied to a stainless substrate including opposite main planes and a processing site formed of a plane different from the main planes, after which a first gold-plating layer is formed all over the surface of the stainless substrate using a hydrochloric acid plating solution. In the second plating step, mask plating is used to form a second gold-plating layer on the first gold-plating layer that covers the processing site in a desired pattern, and in the stripping step, a portion of the first gold-plating layer in an area where there is none of the second gold-plating layer is stripped off using an alkaline stripping solution.

A method of electroless gold plating includes a step of forming an underlying alloy layer on a base material and a step of forming a gold plate layer directly on the underlying alloy layer by electroless reduction plating using a cyanide-free gold plating bath. The underlying alloy layer is formed of an M1-M2-M3 alloy, where M1 is at least one element selected from Ni, Fe, Co, Cu, Zn, where Sn, M2 is at least one element selected from Pd, Re, Pt, Rh, Ag and where Ru, and M3 is at least one element selected from P and B.

In various embodiments, electronic devices such as touch-panel displays incorporate interconnects featuring a conductor layer and, disposed above the conductor layer, a capping layer comprising an alloy of Cu and one or more refractory metal elements selected from the group consisting of Ta, Nb, Mo, W, Zr, Hf, Re, Os, Ru, Rh, Ti, V, Cr, and Ni.

Coated articles and methods for applying coatings are described. In some cases, the coating can exhibit desirable properties and characteristics such as durability, corrosion resistance, and high conductivity. The articles may be coated, for example, using an electrodeposition process.

A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface thereof. Containing an element that provides bonding reliability in a high-temperature environment improves the bonding reliability of the ball bonded part in high temperature. Furthermore, making an orientation proportion of a crystal orientation <100> angled at 15 degrees or less to a wire longitudinal direction among crystal orientations in the wire longitudinal direction 30% or more when measuring crystal orientations on a cross-section of the core material in a direction perpendicular to a wire axis of the bonding wire, and making an average crystal grain size in the cross-section of the core material in the direction perpendicular to the wire axis of the bonding wire 0.9 to 1.5 m provides a strength ratio of 1.6 or less.

A bonding wire for a semiconductor device, characterized in that the bonding wire includes a Cu alloy core material and a Pd coating layer formed on a surface of the Cu alloy core material, the bonding wire contains an element that provides bonding reliability in a high-temperature environment, and a strength ratio defined by the following Equation (1) is 1.1 to 1.6:

Strength ratio=ultimate strength/0.2% offset yield strength.(1)

The present invention relates generally to a coated jewelry article or a coated component of a jewelry article, comprising a jewelry article or a component of a jewelry article, a first metallic coating, and a second metallic coating.

In various embodiments, electronic devices such as touch-panel displays incorporate interconnects featuring a conductor layer and, disposed above the conductor layer, a capping layer comprising an alloy of Cu and one or more refractory metal elements selected from the group consisting of Ta, Nb, Mo, W, Zr, Hf, Re, Os, Ru, Rh, Ti, V, Cr, and Ni.