In various embodiments, electronic devices such as touch-panel displays incorporate interconnects featuring a conductor layer and, disposed above the conductor layer, a capping layer comprising an alloy of Cu and one or more refractory metal elements selected from the group consisting of Ta, Nb, Mo, W, Zr, Hf, Re, Os, Ru, Rh, Ti, V, Cr, and Ni.

To provide a copper-clad laminate which maintains adhesion between a resin film and a conductor layer and which suppresses the occurrence of wrinkles. A copper-clad laminate has a base film containing a thermoplastic resin, an underlying metal layer film-formed on a surface of the base film by a dry plating method, and a copper layer film-formed on a surface of the underlying metal layer. The underlying metal layer has a mean thickness of 0.3 to 1.9 nm. Since the underlying metal layer has a mean thickness of 0.3 nm or more, it is possible to maintain adhesion between the base film and a conductor layer. Since the underlying metal layer has a mean thickness of 1.9 nm or less, it is possible to suppress an increase in the temperature of a film during film-forming of the underlying metal layer, and it is possible to suppress the occurrence of wrinkles.

Coated articles and methods for applying coatings are described. In some cases, the coating can exhibit desirable properties and characteristics such as durability, corrosion resistance, and high conductivity. The articles may be coated, for example, using an electrodeposition process.

A wiring board and a method for manufacturing the wiring board in which an initial Cu plated layer is formed by plating so as to cover the surface of a metallized layer and then the initial Cu plated layer is heated to be softened or melted. Copper in the softened or melted initial Cu plated layer enters into open pore portions of the metallized layer. In addition, during the heating, components of the metallized layer and components of the initial Cu plated layer are mutually thermally diffused. Consequently, when solidified later (that is, when the initial Cu plated layer becomes a lower Cu plated layer), the adhesiveness between the metallized layer and the lower Cu plated layer is improved due to, for example, an anchoring effect and a mutual thermal diffusion effect.

A highly-ordered nano-structure array, formed on a substrate, mainly comprises a plurality of highly-ordered nano-structure units. Each of the highly-ordered nano-structure units forms a receiving compartment. One end of the receiving compartment opposite to the substrate has an opening. Each of the highly-ordered nano-structure units comprises at least one thin film layer. A periphery and a bottom of the receiving compartment are defined by an inner surface of a surrounding portion of the at least one thin film layer and a top surface of a bottom portion of the at least one thin film layer, respectively. The at least one thin film layer is made of at least one material selected from the group consisting of: metal, alloy, oxide, nitride, and sulfide.

A coated metallic substrate is provided, including, at least; one layer of oxides, such layer being directly topped by an intermediate coating layer comprising Fe, Ni, Cr and Ti wherein the amount of Ti is above or equal to 5 wt. % and wherein the following equation is satisfied: 8 wt. %<Cr+Ti<40 wt. %, the balance being Fe and Ni, such intermediate coating layer being directly topped by a coating layer being an anticorrosion metallic coating.

An electroplated cobalt deposit and a method of electrodepositing cobalt on a surface to produce a level deposit across the surface of the substrate. The cobalt electrolyte contains (1) a source of cobalt ions; (2) boric acid; (3) a pH adjuster; and (4) an organic additive, which contains a suppressor. The electroplated cobalt deposit exhibits a level surface such that the thickness difference across substantially the entire surface of the substrate of less than about 200 nm.

An object of the present invention is to provide a new electroless plating film which can prevent the diffusion of molten solder to a metal material constituting a conductor. The present invention is an electroless Co—W plating film, wherein content of W is in an amount of 35 to 58 mass % and a thickness of the film is 0.05 μm or more.

Provided is a beryllium copper alloy bonded body including a first member made of a beryllium copper alloy and a second member made of a beryllium copper alloy, wherein the first member and the second member are bonded to each other via the nickel layer having a thickness of 8 μm or less.

An extremely thin copper foil with a carrier is provided that can keep stable releasability even after being heated for a prolonged time at a high temperature of 350° C. or more. The extremely thin copper foil with a carrier includes a carrier composed of a glass or ceramic material; an intermediate layer provided on the carrier and composed of at least one metal selected from the group consisting of Cu, Ti, Al, Nb, Zr, Cr, W, Ta, Co, Ag, Ni, In, Sn, Zn, Ga, and Mo; a release layer provided on the intermediate layer and including a carbon sublayer and a metal oxide sublayer or containing metal oxide and carbon; and an extremely thin copper layer provided on the release layer.