Plant for delivering a gas mixture to a silicon wafer doping unit comprising a source of a dopant gas (1), a source of a carrier gas (2), a mixer device (3) connected to the container of dopant gas (1) and to the source of carrier gas (2), a first flow regulator member (41) and a second flow regulator member (42) for regulating the flows of the dopant gas (1) and of the carrier gas (2) towards the mixer device (3), a control unit (5) for controlling the first and second flow regulator members (41, 42) so as to adjust the first flow rate setpoint (D1) and the second flow rate setpoint (D2) in proportions determined as a function of at least one target content (C1, C2) of dopant gas (1) and/or carrier gas (2) in the mixture, a buffer tank (7), a delivery line (6) for delivering the mixture to a doping unit (10) with a consumption flow rate (DC), at least one measurement sensor (8) for measuring a physical quantity, the variation of which is representative of a variation in the consumption flow rate (DC) and for providing a first measurement signal, the control unit (5) being connected to the sensor (8) and configured to produce a first control signal from the first measurement signal, the flow regulator members (41, 42) being configured to adjust the first and second flow rate setpoints (D1, D2) in response to said first control signal.

A gas mixing system for semiconductor fabrication includes a mixing block. The mixing block defines a gas mixing chamber, a first gas channel fluidly coupled to the gas mixing chamber at a first exit location, and a second gas channel fluidly coupled to the gas mixing chamber at a second exit location, wherein the first exit location is diametrically opposite the second exit location relative to the gas mixing chamber and the second gas channel has a bend of 90 degrees or less between an entrance of the second gas channel and the second exit location.

Exemplary modular gas delivery assemblies may include a plurality of modular gas blocks coupled together. Each gas block may include an upper portion and a lower portion. A first end of the upper portion may extend beyond a first end of the lower portion and a second end of the lower portion may extend beyond a second end of the upper portion. A first fluid channel may include a first fluid port, a second fluid port, and a third fluid port. The block body may define a second fluid channel that extends transversely to the first fluid channel. A first modular gas block may be coupled with a second modular gas block and a third modular gas block such that the first fluid channels of each of the first, second, and third modular gas blocks are fluidly coupled with one another.

An information processing device includes: an information acquiring part configured to acquire plating process information including operational motion information including target paddle motion information indicating an agitating motion of a target paddle corresponding to a paddle to be processed, plating solution motion information indicating a motion of supplying a plating solution to a plating tank, and carrier machine motion information indicating a motion of carrying a substrate and operational-motion paddle vibration information indicating vibration characteristics of the target paddle when an operational motion is performed, the motions being operational motions performed by a substrate plating device; and an information generating part configured to generate agitating-motion paddle vibration information in response to the plating process information by inputting the plating process information acquired by the information acquiring part to a learning model which has learned a correlation between the plating process information and the agitating-motion paddle vibration information using machine learning.

A gas mixing system for semiconductor fabrication includes a mixing block. The mixing block defines a gas mixing chamber, a first gas channel fluidly coupled to the gas mixing chamber at a first exit location, and a second gas channel fluidly coupled to the gas mixing chamber at a second exit location, wherein the first exit location is diametrically opposite the second exit location relative to the gas mixing chamber and the second gas channel has a bend of 90 degrees or less between an entrance of the second gas channel and the second exit location.

Systems and methods are described for dissolving ammonia gas in deionized water. The system includes a deionized water source and a gas mixing device including a first inlet for receiving ammonia gas, a second inlet for receiving a transfer gas, and a mixed gas outlet for outputting a gas mixture including the ammonia gas and the transfer gas. The system includes a contactor that receives the deionized water and the gas mixture and generates deionized water having ammonia gas dissolved therein. The system includes a sensor in fluid communication with at least one inlet of the contactor for measuring a flow rate of the deionized water, and a controller in communication with the sensor. The controller sets a flow rate of the ammonia gas based on the flow rate of the deionized water measured by the sensor, and a predetermined conductivity set point.

This in-line active and reverse calculating mass balance blending system can maintain a chemical at desired control points, such as with respect to concentration, temperature, and/or pressure, while the output flow rate is changing dynamically to a point of use. A blending unit is configured to receive and blend at least two species and deliver a mixture at selected concentrations to points of use. A controller can be configured to determine a mass balance to maintain the concentrations in the mixture using information from metrology systems and a flow in an output to the at least one point of use. The controller also can be configured to maintain a concentration in the mixture within a concentration range by controlling flow rates to the blending unit.

A chemical liquid preparation method of preparing a chemical liquid for treating a film formed on a substrate, including a gas dissolving process in which an oxygen-containing gas and an inert-gas-containing gas are dissolved in the chemical liquid by supplying the oxygen-containing gas which contains oxygen gas and the inert-gas-containing gas which contains an inert gas to a chemical liquid, wherein in the gas dissolving process, a dissolved oxygen concentration in the chemical liquid is adjusted by setting a mixing ratio between the oxygen-containing gas and the inert-gas-containing gas supplied to the chemical liquid as a mixing ratio corresponding to a predetermined target dissolved oxygen concentration.

A fluid mixing system may include a fluid inlet, a gas inlet, a common outlet, and a mixing chamber. The mixing chamber may be defined between a stator and a magnetically levitated rotor. The rotor may be configured to rotate relative to the stator. The mixing chamber may include an uneven surface. The mixing chamber may operatively couple the fluid inlet and the gas inlet to the common outlet.

A gas solution supply device 1 includes: a first gas-liquid separator 8 in which gas solution is stored; a second gas-liquid separator 16 provided at a stage subsequent to the first gas-liquid separator 8 and in which gas solution to be supplied to a use point is stored; an intermediate line 17 provided between the first gas-liquid separator 8 and the second gas-liquid separator 16; a pressure booster pump 18 provided on the intermediate line 17 and increases a pressure of gas solution being supplied from the first gas-liquid separator 8 to the second gas-liquid separator 16; a gas supply line 2 that supplies gas as a material of the gas solution; and a gas dissolving unit 20 provided on the intermediate line 17 and dissolves the gas supplied from the gas supply line 2 in the gas solution supplied from the first gas-liquid separator 8.