A liquid material vaporization and supply device is provided in which it is possible to accurately control a flow rate even in the case where calibration data is not available for a material gas. A first tank in which a liquid material is vaporized to produce material gas; a second tank in which the material gas is contained at a predetermined pressure; a pressure sensor that senses the pressure inside the second tank; a lead-out path for leading the material gas out of the second tank; a fluid control valve that is provided to open/close the lead-out path; and a flow rate control part that, when the material gas is led out through the lead-out path, on the basis of a reduction in the pressure sensed by the pressure sensor, controls the opening level of the valve to control the flow rate of the material gas are included.

A liquid material vaporization and supply device is provided in which it is possible to accurately control a flow rate even in the case where calibration data is not available for a material gas. A first tank in which a liquid material is vaporized to produce material gas; a second tank in which the material gas is contained at a predetermined pressure; a pressure sensor that senses the pressure inside the second tank; a lead-out path for leading the material gas out of the second tank; a fluid control valve that is provided to open/close the lead-out path; and a flow rate control part that, when the material gas is led out through the lead-out path, on the basis of a reduction in the pressure sensed by the pressure sensor, controls the opening level of the valve to control the flow rate of the material gas are included.

An exemplary hydrogen production apparatus 100 according to the present invention includes a grinding unit 10 configured to grind a silicon chip or a silicon grinding scrap 1 to form silicon fine particles 2, and a hydrogen generator 70 configured to generate hydrogen by causing the silicon fine particles 2 to contact with as well as disperse in, or to contact with or dispersed in water or an aqueous solution. The hydrogen production apparatus 100 can achieve reliable production of a practically adequate amount of hydrogen from a start material of silicon chips or silicon grinding scraps that are ordinarily regarded as waste. The hydrogen production apparatus thus effectively utilizes the silicon chips or the silicon grinding scraps so as to contribute to environmental protection as well as to significant reduction in cost for production of hydrogen that is utilized as an energy source in the next generation.

An exemplary hydrogen production apparatus 100 according to the present invention includes a grinding unit 10 configured to grind a silicon chip or a silicon grinding scrap 1 to form silicon fine particles 2, and a hydrogen generator 70 configured to generate hydrogen by causing the silicon fine particles 2 to contact with as well as disperse in, or to contact with or dispersed in water or an aqueous solution. The hydrogen production apparatus 100 can achieve reliable production of a practically adequate amount of hydrogen from a start material of silicon chips or silicon grinding scraps that are ordinarily regarded as waste. The hydrogen production apparatus thus effectively utilizes the silicon chips or the silicon grinding scraps so as to contribute to environmental protection as well as to significant reduction in cost for production of hydrogen that is utilized as an energy source in the next generation.

The present invention relates to methods and devices for providing microbial control and/or disinfection/remediation of an environment. The methods generally comprise: generating a Purified Hydrogen Peroxide Gas (PHPG) that is substantially free of, e.g., hydration, ozone, plasma species, and/or organic species; and directing the gas comprising primarily PHPG into the environment such that the PHPG acts to provide microbial control and/or disinfection/remediation in the environment, preferably both on surfaces and in the air.

The present invention relates to methods and devices for providing microbial control and/or disinfection/remediation of an environment. The methods generally comprise: generating a Purified Hydrogen Peroxide Gas (PHPG) that is substantially free of, e.g., hydration, ozone, plasma species, and/or organic species; and directing the gas comprising primarily PHPG into the environment such that the PHPG acts to provide microbial control and/or disinfection/remediation in the environment, preferably both on surfaces and in the air.

A hydrogen storage system includes a pressure-sealed storage unit defining an interior and having an outlet, an upper manifold and a lower manifold separated by a dividing plane having a set of ports, a set of chambers, and a hydrogen storage, wherein at least some hydrogen gas is supplied to the outlet.

A hydrogen storage system includes a pressure-sealed storage unit defining an interior and having an outlet, an upper manifold and a lower manifold separated by a dividing plane having a set of ports, a set of chambers, and a hydrogen storage, wherein at least some hydrogen gas is supplied to the outlet.

A method for obtaining a mixture for producing H.sub.2, the mixture comprising a metal borohydride, Me(BH.sub.4).sub.n, a metal hydroxide, Me(OH).sub.n, and H.sub.2O, in which Me is a metal and n is the valance of the metal ion. The H.sub.2O is provided in ultrapure water, UPW, the UPW having an electrical conductance below 1 μS/cm. The method comprises dissolving the metal borohydride and the metal hydroxide in UPW to obtain the mixture for producing H.sub.2 comprising an amount of borohydride, BH.sub.4, groups of the metal borohydride in the range of 45 to 55% mol of the mixture, an amount of hydroxide, OH, groups of the metal hydroxide in the range of 2 to 5% mol of the mixture, and at least substantially UPW for the remainder of the mixture.

A method for obtaining a mixture for producing H.sub.2, the mixture comprising a metal borohydride, Me(BH.sub.4).sub.n, a metal hydroxide, Me(OH).sub.n, and H.sub.2O, in which Me is a metal and n is the valance of the metal ion. The H.sub.2O is provided in ultrapure water, UPW, the UPW having an electrical conductance below 1 μS/cm. The method comprises dissolving the metal borohydride and the metal hydroxide in UPW to obtain the mixture for producing H.sub.2 comprising an amount of borohydride, BH.sub.4, groups of the metal borohydride in the range of 45 to 55% mol of the mixture, an amount of hydroxide, OH, groups of the metal hydroxide in the range of 2 to 5% mol of the mixture, and at least substantially UPW for the remainder of the mixture.