Devices and methods are provided for continuous measurement of an analyte concentration. The device can include a sensor having a plurality of sensor elements, each having at least one characteristic that is different from other sensor(s) of the device. In some embodiments, the plurality of sensor elements are each tuned to measure a different range of analyte concentration, thereby providing the device with the capability of achieving a substantially consistent level of measurement accuracy across a physiologically relevant range. In other embodiments, the device includes a plurality of sensor elements each tuned to measure during different time periods after insertion or implantation, thereby providing the sensor with the capability to continuously and accurately measure analyte concentrations across a wide range of time periods. For example, a sensor system 180 is provided having a first working electrode 150 comprising a first sensor element 102 and a second working electrode 160 comprising a second sensor element 104, and a reference electrode 108 for providing a reference value for measuring the working electrode potential of the sensor elements 102, 104.

Systems and methods for electroless plating a first metal onto a second metal in a molten salt bath including: a bath vessel holding a dry salt mixture including a dry salt medium and a dry salt medium of the first metal, and without the reductant therein, the dry salt mixture configured to be heated to form a molten salt bath; and the second metal is configured to be disposed in the molten salt bath and receive a pure coating of the first metal thereon by electroless plating in the molten salt bath, wherein the second metal is more electronegative than the first metal.

The present disclosure discloses a method for forming a high-density aligned carbon nanotube film. The method includes injecting a carbon nanotube solution into a container, and adding a dispersant to form a carbon nanotube-dispersant composite. The method also includes adding a substance that interacts with the carbon nanotube-dispersant composite and then dispersing the obtained carbon nanotube solution using water ultrasonic or probe ultrasonic to obtain a carbon nanotube solution containing a dispersant. Then a large-area or patterned high-quality aligned carbon nanotube film can be formed on a substrate by using processes such as pulling, injection dripping or printing. The method is low-cost and suitable for the preparation of large-area high-density aligned carbon nanotubes, and satisfies various needs for industrial application of carbon-based integrated circuits.

Automated cell staining systems and methods are disclosed herein. In particular, the staining systems disclosed herein provide low-volume, automated bench top staining systems for staining biological samples contained on a cytological slide.

Automated cell staining systems and methods are disclosed herein. In particular, the staining systems disclosed herein provide low-volume, automated bench top staining systems for staining biological samples contained on a cytological slide.

Various embodiments include composite wicks for ultra-low noise condensation particle counters (CPCs). In one embodiment, a composite wick includes a first porous material having a first pore density, with the first porous material further having a first surface and an opposing second surface. A second porous material is in fluid communication with the first porous material and has a first surface with an area substantially the same as an area of the first surface of the first porous material. The first surface of the second porous material is substantially in contact with the first surface of the first porous material. The second porous material has a pore density that is dissimilar the first pore density of the first material. The first material and the second material are configured to provide vapor from a liquid to a fluid-based particle counter. Other apparatuses are disclosed.

There is provided a technique capable of forming a plating film excellent in film thickness and quality uniformity on a to-be-plated surface of a semiconductor wafer while suppressing an increase in costs of facilities. An apparatus for manufacturing a semiconductor device includes: a reaction bath; a supply pipe provided inside the reaction bath and including a plurality of ejection holes for ejecting the reaction solution, the ejecting holes being arranged in a longitudinal direction of the supply pipe; and an outer bath serving as a reservoir bath provided adjacent to the reaction bath on a first end side of the supply pipe and storing therein the reaction solution overflowed the reaction bath. The aperture ratio of part of the ejection holes more distant from the outer bath is at least partially higher than that of part of the ejection holes closer to the outer bath.

There is provided a technique capable of forming a plating film excellent in film thickness and quality uniformity on a to-be-plated surface of a semiconductor wafer while suppressing an increase in costs of facilities. An apparatus for manufacturing a semiconductor device includes: a reaction bath; a supply pipe provided inside the reaction bath and including a plurality of ejection holes for ejecting the reaction solution, the ejecting holes being arranged in a longitudinal direction of the supply pipe; and an outer bath serving as a reservoir bath provided adjacent to the reaction bath on a first end side of the supply pipe and storing therein the reaction solution overflowed the reaction bath. The aperture ratio of part of the ejection holes more distant from the outer bath is at least partially higher than that of part of the ejection holes closer to the outer bath.

A substrate processing apparatus includes a processing tank, a holder, an organic solvent supply, a drainage port, a gas supply, and an exhaust port. The processing tank stores an aqueous layer. The holder holds a substrate. The organic solvent supply supplies an organic solvent onto the aqueous layer to form a liquid layer of the organic solvent. The drainage port discharges the aqueous layer from a bottom wall of the processing tank and causes the liquid layer of the organic solvent to descend from above the substrate to below the substrate. The gas supply supplies a gas of a water repellent agent to the liquid layer from above the processing tank while the liquid layer descends. The exhaust port is exposed on a side wall of the processing tank by the descending of the liquid layer and discharges the gas of the water repellent gas.

Systems and methods for electroless plating a first metal onto a second metal in a molten salt bath including: a bath vessel holding a dry salt mixture including a dry salt medium and a dry salt medium of the first metal, and without the reductant therein, the dry salt mixture configured to be heated to form a molten salt bath; and the second metal is configured to be disposed in the molten salt bath and receive a pure coating of the first metal thereon by electroless plating in the molten salt bath, wherein the second metal is more electronegative than the first metal.