A display cover plate includes: a substrate; a first thermoplastic material layer provided on one side of the substrate; a flexible polymer layer provided on one side of the first thermoplastic material layer away from the substrate; and a hardened layer provided on one side of the flexible polymer layer away from the first thermoplastic material layer.

A method for producing an aligned boron nitride nanotube film includes drying a dispersion containing boron nitride nanotubes, a biopolymer, and a solvent.

There is provided a technique that includes (a) supplying a fluorine-containing gas to a substrate including a first surface and a second surface; (b) supplying an oxygen- and hydrogen-containing gas and a catalyst to the substrate after performing (a); (c) supplying a modifying agent to the substrate after performing (b); and (d) supplying a film-forming agent to the substrate after performing (c).

Methods for forming and controlling morphology cracks in silicon dioxide (SiO.sub.2) film comprising: preparing SiO.sub.2precursor solution comprising solvent, precursor of SiO.sub.2, precursor of metal oxide nanocrystals, water, and acid; coating the solution onto substrate; drying the solution atop the substrate at a temperature between about 20° C. to 100° C. between 1 minute to 24 hours to form SiO.sub.2 film having uniformly dispersed metal oxide nanocrystals, wherein shorter drying times yield substantially spherical shaped metal oxide nanocrystals and longer drying times yield rod and disc shaped metal oxide nanocrystals; and thermally treating the SiO.sub.2 film between about 60° C. to 500° C. between 1 minute to 24 hours to form cracked mesh SiO.sub.2 film, wherein two cracks initiate from rod shaped metal oxide nanocrystals, three to four cracks initiate from spherical shaped metal oxide nanocrystals, and four or more cracks initiate from disc shaped metal oxide nanocrystals. Other embodiments are described and claimed.

Methods and apparatuses for selectively etching silicon-and-oxygen-containing material relative to silicon-and-nitrogen-containing material by selectively forming a carbon-containing self-assembled monolayer on a silicon-and-nitrogen-containing material relative to a silicon-and-oxygen-containing material are provided herein. Methods are also applicable to selectively etching silicon-and-nitrogen-containing material relative to silicon-and-oxygen-containing material.

A highly stretchable superhydrophobic thin film using initiated chemical vapor deposition is prepared by a method in which a substrate is coated with a copolymer at a nanometer thickness by allowing a fluorine monomer containing 4 to 6 fluoroalkyl groups and having a glass transition temperature of 5° C. or less to react with a crosslinking monomer on the substrate in the presence of an initiator in an initiated chemical vapor deposition reactor and thus its durability can be secured in foldable and wearable devices.

Disclosed are silicon and carbon containing film forming compositions comprising a polycarbosilazane polymer or oligomer formulation that consists of silazane-bridged carbosilane monomers, the carbosilane containing at least two —SiH.sub.2— moieties, either as terminal groups (—SiH.sub.3R) or embedded in a carbosilane cyclic compound, wherein R is H, a C.sub.1-C.sub.6 linear, branched, or cyclic alkyl- group, a C.sub.1-C.sub.6 linear, branched, or cyclic alkenyl- group, or combination thereof. Also disclosed are methods of forming a silicon and carbon containing film comprising forming a solution comprising a polycarbosilazane polymer or oligomer formulation and contacting the solution with the substrate via a spin-on coating, spray coating, dip coating, or slit coating technique to form the silicon and carbon containing film.

Provided is an application tool that allows reduction of an amount of waste by using no masking sheets, and can easily form a coated portion such as an antislip protrusion with reduced variation in a short time period. The application tool includes a support plate and a plurality of application bodies disposed at the support plate so as to protrude with height positions of the tips aligned with each other. A tip recess is disposed at the tip portion of each of the plurality of the application bodies as a holding recess for holding coating liquid.

Provided are certain silicon precursor compounds which are useful in the formation of silicon-containing films in the manufacture of semiconductor devices, and more specifically to compositions and methods for forming such silicon-containing films, such as films comprising silicon, silicon nitride, silicon oxynitride, silicon dioxide, a carbon-doped silicon nitride, or a carbon-doped silicon oxynitride film.

One variation of a method for fabricating a dermal heatsink includes: fabricating a substrate defining an interior surface, an exterior surface opposite the interior surface, and an open network of pores extending between the interior surface and the exterior surface; activating surfaces of the substrate and walls of the open network of pores; applying a coating over the substrate to form a heatsink, the coating comprising a porous, hydrophilic material and defining a void network; removing an excess of the coating from the substrate to clear blockages within the open network of pores by the coating; hydrating the heatsink during a curing period; heating the heatsink during the curing period to increase porosity of the coating applied over surfaces of the substrate; and rinsing the heatsink with an acid to decarbonate the coating along walls of the open network of pores in the substrate.