A method for regenerating an adhesive surface by removing a foreign matter adhering to the adhesive surface of a component holding jig. The method includes: disposing, on the adhesive surface, a mask member having: a surface which is in contact with the adhesive surface and has an arithmetic mean roughness of 1.0 m or less; and an opening through which the adhesive surface is exposed; disposing a curable resin composition on the adhesive surface and on the mask member and curing the curable resin composition; and simultaneously peeling off the mask member and a cured product of the curable resin composition.

The disclosure relates to a cleaning composition that aids in the removal of post-etch residues and aluminum-containing material, e.g., aluminum oxide, in the production of semiconductors that utilize an aluminum-containing etch stop layer. The compositions have a high selectivity for post-etch residue and aluminum-containing materials relative to low-k dielectric materials, cobalt-containing materials and other metals on the microelectronic device.

A substrate processing method includes a process of cooling a substrate to below a freezing point of a processing liquid using a cooling fluid brought into contact with the substrate opposite. While the substrate is cooled to below the freezing point of the processing liquid, a droplet of processing liquid is dispensed onto a surface of the substrate at a specified location of a foreign substance. The droplet then forms a frozen droplet portion at the specified location. The frozen droplet portion is then thawed.

According to one embodiment, a method for cleaning a substrate includes first cleaning process and second cleaning process. The first cleaning process subjects a substrate to a first cleaning method. The second cleaning process subjects the substrate to a second cleaning method that is different from the first cleaning method and is subsequent to the first cleaning process. The first cleaning method includes at least one of acidic cleaning or alkaline cleaning. The second cleaning method includes freeze cleaning.

A substrate cleaning method includes supplying, onto a substrate, a film-forming processing liquid including a volatile component and a polar organic material that forms a processing film on the substrate, volatilizing the volatile component such that the film-forming processing liquid solidifies or cures and forms the processing film on the substrate, supplying, to the processing film formed on the substrate, a peeling processing liquid that peels off the processing film from the substrate and includes a non-polar solvent, and supplying, to the processing film, a dissolution processing liquid that dissolves the processing film and includes a polar solvent after the supplying of the peeling processing liquid. The non-polar solvent does not contain water, and the polar solvent does not contain water.

Processes for removing a mask layer (e.g., doped amorphous carbon mask layer) from a substrate with high aspect ratio structures are provided. In one example implementation, a process can include depositing a polymer layer on at least a portion of a top end of a high aspect ratio structure on a substrate. The process can further include removing at least a portion of the polymer layer and the doped amorphous carbon film form the substrate using a plasma strip process. In example embodiments, depositing a polymer layer can include plugging one or more high aspect ratio structures with the polymer layer. In example embodiments, depositing a polymer layer can include forming a polymer layer on a sidewall of one or more high aspect ratio structures.

According to one embodiment, a method for cleaning a substrate includes first cleaning process and second cleaning process. The first cleaning process subjects a substrate to a first cleaning method. The second cleaning process subjects the substrate to a second cleaning method that is different from the first cleaning method and is subsequent to the first cleaning process. The first cleaning method includes at least one of acidic cleaning or alkaline cleaning. The second cleaning method includes freeze cleaning.

The substrate processing method includes a hydrophilization step of hydrophilizing a surface of a substrate, a processing liquid supplying step of supplying a processing liquid to the hydrophilized surface of the substrate, a processing film forming step in which the processing liquid supplied to the surface of the substrate is solidified or cured to form a processing film on the surface of the substrate, and a peeling step in which a peeling liquid is supplied to the surface of the substrate to peel the processing film from the surface of the substrate. The peeling step includes a penetrating hole forming step in which the processing film is partially dissolved in the peeling liquid to form a penetrating hole in the processing film.

A simplified method for removing foreign matters formed on a substrate in a semiconductor device manufacturing process; and a composition for forming a coating film for foreign matter removal use, which can be used in the method. A coating film is formed on a semiconductor substrate using a composition preferably containing a polyamic acid produced from (a) a tetracarboxylic dianhydride compound and (b) a diamine compound having at least one carboxyl group or a polyamic acid produced from (a) a tetracarboxylic dianhydride compound, (b) a diamine compound having at least one carboxyl group and (c) a diamine compound, and then foreign matters occurring on the coating film are removed together with the coating film by the treatment with a developing solution.

A substrate treating method, liquid and apparatus are provided which can reduce the amount of sublimable substance used for the drying of a substrate while reducing the collapse of pattern. The substrate treating method includes a step of supplying a liquid to the pattern-formed surface of the substrate, a step of solidifying the liquid on the pattern-formed surface to form a solidified body and a step of subliming the solidified body so as to remove it from the pattern-formed surface. The substrate treating liquid includes a molten sublimable substance and a solvent, the freezing point of the sublimable substance being higher than the freezing point of the solvent. When the sublimable substance and the solvent are separated, the sublimable substance is settled and in the solidification step, the settled sublimable substance is solidified to have a height equal to or higher than the height of a pattern.