Patent classifications
B08B7/0014
METHOD OF REMOVING CONTAMINANTS FROM A DIFFUSION-COATED COMPONENT
A method of removing contaminants from a surface of a gas turbine engine component protected by a diffusion coating that comprises an additive layer on the surface of the component and a diffusion zone in the surface of the component. The method includes subjecting the surface containing contaminants to laser beam pulses to remove contaminants from the component such that contaminants on the surface of the component are removed without damaging or removing the diffusion zone of the diffusion coating. Methods for controlled removal of at least a portion of a thickness of a diffusion coating from a coated superalloy component are also provided.
Substrate processing method and substrate processing apparatus
A substrate processing method includes a process of cooling a substrate to below a freezing point of a processing liquid using a cooling fluid brought into contact with the substrate opposite. While the substrate is cooled to below the freezing point of the processing liquid, a droplet of processing liquid is dispensed onto a surface of the substrate at a specified location of a foreign substance. The droplet then forms a frozen droplet portion at the specified location. The frozen droplet portion is then thawed.
Substrate cleaning apparatus and substrate cleaning method
A processing solution containing solvent and solute is supplied onto a substrate (9). The processing solution transforms into a particle retention layer as a result of at least part of the solvent being volatilized from the processing solution and causing the processing solution to solidify or harden. The particle retention layer is removed from the substrate (9) by supplying a removal liquid onto the substrate (9). A solute component contained in the particle retention layer is insoluble or poorly soluble in the removal liquid, whereas the solvent is soluble. The solute component contained in the particle retention layer has the property of being altered to become soluble in the removal liquid when heated to a temperature higher than or equal to an alteration temperature. The removal liquid is supplied after the formation of the particle retention layer, without undergoing a process of alternating the solute component.
Substrate processing method and substrate processing apparatus
A substrate processing method includes a first processing liquid supplying step of supplying a first processing liquid to an upper surface of a substrate, a holding-layer forming step of solidifying or curing the first processing liquid to form a particle holding layer on the upper surface of the substrate, a holding-layer removing step of peeling and removing the particle holding layer from the upper surface of the substrate, a liquid film forming step of forming, after removal of the particle holding layer from the substrate, a liquid film of a second processing liquid, a gas phase layer forming step of forming a gas phase layer for holding the liquid film between the upper surface of the substrate and the liquid film, and a liquid film removing step of removing the second processing liquid from the upper surface of the substrate by moving the liquid film on the gas phase layer.
Substrate processing method and substrate processing apparatus
To dry a substrate formed with a pattern on a front surface satisfactorily and with excellent drying performance, a substrate processing method comprises: a liquid film formation step of forming a liquid film of a processing liquid, in which cyclohexanone oxime is dissolved in a solvent, on a front surface of a substrate formed with a pattern by supplying the processing liquid to the front surface of the substrate; a solidified film formation step of forming a solidified film of the cyclohexanone oxime by solidifying the liquid film of the processing liquid; and a sublimation step of removing the solidified film from the front surface of the substrate by sublimating the solidified film.
Semiconductor manufacturing system and particle removal method
A particle removal method includes loading a particle attracting member with a coating layer into a processing chamber of a processing apparatus. The method also includes fixing the particle attracting member on a holder in the processing chamber in a cleaning cycle. The method also includes attracting particles in the processing chamber by the coating layer of the particle attracting member due to a potential difference between the particles and the coating layer. The particles are attracted to the surface of the coating layer. The method further includes loading the particle attracting member with the coating layer and the attracted particles out of the processing chamber, after the cleaning cycle. In addition, the method includes loading a semiconductor wafer into the processing chamber, and performing a semiconductor process on the semiconductor wafer in the processing chamber. The semiconductor process is performed after the cleaning cycle.
Compositions and methods for removal of pressure sensitive adhesives
A composition for removal of adhesives comprises a polar solvent, such as benzyl alcohol, in combination with thickeners, dry lubricants, and/or gelling agents to allow for penetration of the adhesive and transformation of the treated adhesive into a solid material that can be readily removed from a surface without forming sticky residue that adheres to the solid material or tool used to remove the adhesive.
SEMICONDUCTOR MANUFACTURING SYSTEM
A semiconductor manufacturing system includes a semiconductor processing apparatus. The semiconductor processing apparatus includes a processing chamber configured to perform a semiconductor process on a semiconductor wafer, and a transferring module configured to transfer the semiconductor wafer into and out of the processing chamber. The semiconductor manufacturing system also includes a particle attracting member. The semiconductor manufacturing system also includes a monitoring device configured to control the transferring module to load the particle attracting member into the processing chamber in a cleaning cycle while the semiconductor wafer is not in the processing chamber, and control the transferring module to load the particle attracting member out of the processing chamber after the cleaning cycle. In the cleaning cycle, particles in the processing chamber are attracted to the surface of a coating layer of the particle attracting member due to the potential difference between the coating layer and the particles.
BIOLOGICAL CLEANUP KIT
The present disclosure relates to a kit for cleaning biological fluids from a surface. The kit comprises at least one protective article of clothing, absorbent powder, a trash bag, surface sanitizer, an absorbent towel, a scraper, a handle, and a dustpan. The dustpan is configured to be securely coupled to the handle. The dustpan has a lid and a base and can alternate between an open position and a self-sealing closed position. In the closed position the base and lid define an interior volume having a height along a y-axis, a width along an x-axis, and a depth along a z-axis. An adhesive strip is coupled to a lip of the dustpan and is configured to interact with a surface and temporarily engage the dustpan with the surface. The absorbent powder is a mixture of a super absorbent polymer and perlite.
Method for cleaning gas supply line and processing system
A method includes forming a film of a compound on an inner wall of a gas supply line by polymerization of a first compound and a second compound by controlling a temperature of the gas supply line to a first temperature at which the first compound and the second compound are polymerized in a state where a first gas containing the first compound and a second gas containing the second compound are supplied to the gas supply line, and removing the film by controlling the temperature of the gas supply line to a second temperature at which the film is depolymerized after predetermined processing is performed on a target object in a processing chamber by a processing gas supplied into the processing chamber through the gas supply line having the film. The first compound is isocyanate. The second compound is amine or a compound having a hydroxyl group.