A processing method of a substrate is provided. The substrate is processed by a substrate processing apparatus. The substrate processing apparatus includes a reaction chamber and a secondary chamber surrounding the reaction chamber. The processing method includes: placing the substrate in the reaction chamber; performing a process to increase a pressure in the reaction chamber and a pressure in the secondary chamber, such that the pressure in the secondary chamber is between an atmospheric pressure and the pressure in the reaction chamber; increasing a temperature in the reaction chamber; and processing the substrate by a supercritical fluid in the reaction chamber.

Embodiments described herein relate to a cleaning device and methods for cleaning an object. In one embodiment, the object is cleaned by moving a clean head along a surface of the object. Supercritical carbon dioxide fluid is delivered by supercritical carbon dioxide fluid vessel to the surface of the object. The supercritical carbon dioxide fluid and contamination material are removed from the object by a vacuum pump to a detector. One or more measurements of the contamination material are determined by the detector. Samples of the contamination material are collected by a collector. A contamination level of the surface of the object is determined by an analyzer.

A substrate processing apparatus according to the present invention includes a support tray that is configured in such a manner that a residual liquid getting in between a lower surface of a substrate and a substrate facing surface of the support tray is trapped in a groove. The support tray further includes a discharge part through which the residual liquid trapped in the groove is discharged from the groove through a discharge part. As a result, backflow of the residual liquid is prevented effectively, thereby preventing re-adhesion of the residual liquid to the upper surface of the substrate.

Embodiments of the invention generally relate to a method of cleaning a substrate and a substrate processing apparatus that is configured to perform the method of cleaning the substrate. More specifically, embodiments of the present invention relate to a method of cleaning a substrate in a manner that reduces or eliminates the negative effects of line stiction between semiconductor device features. Other embodiments of the present invention relate to a substrate processing apparatus that allows for cleaning of the substrate in a manner that reduces or eliminates line stiction between semiconductor device features formed on the substrate.

Embodiments of the invention generally relate to a method of cleaning a substrate and a substrate processing apparatus that is configured to perform the method of cleaning the substrate. More specifically, embodiments of the present invention relate to a method of cleaning a substrate in a manner that reduces or eliminates the negative effects of line stiction between semiconductor device features. Other embodiments of the present invention relate to a substrate processing apparatus that allows for cleaning of the substrate in a manner that reduces or eliminates line stiction between semiconductor device features formed on the substrate.

Provided is a substrate cleaning method for cleaning a substrate having an oxide film on the surface thereof. The method includes a partial etching step of etching the oxide film to a predetermined film thickness, and a physical cleaning step of executing physical cleaning on the surface of the substrate after the partial etching step. The oxide film may be a natural oxide film with particles at least partially taken into the film. In this case, the partial etching step may either expose the particles from the natural oxide film or increase the exposed portion from the natural oxide film. The physical cleaning may remove, by physical action, the particles exposed from the natural oxide film while leaving the natural oxide film on the surface of the substrate.

The present invention comprises device (10) which maintains a modified atmospheric pressure within, uses evaporation and condensation by means of heated or cooled fluid jackets and radiators to move and clean washing fluid and fans to increase and decrease the pressure of the gaseous washing fluid in a manner which causes liquid washing fluid to flow laminar within the extraction chamber. The present invention comprises a modular extraction chamber (42) which when fitted to the device (10) is in permanent communication with a boiling chamber (27) and a condensation chamber (33). These chambers are intermittently in communication with an evaporation chamber (12) and a corresponding clean solvent holding chamber (20). The evaporation chamber and the clean solvent holding tank may, upon completion of the extraction cycle sequester the pressurized washing fluid while the rest of the system is depressurized allowing for quick changeover of source material.

Embodiments of the inventive concept provide an apparatus for treating a substrate. According to an exemplary embodiment, an apparatus for treating a substrate comprises a first valve and a second valve sequentially installed along a direction from a fluid supplying source to a high-pressure chamber in the supply line; a branch line branching from the supply line between the first valve and the second valve and connected to an exhaust line; a third valve installed on the branch line; an exhaust unit exhausting the process fluid inside the high-pressure chamber; and a controller, wherein the controller is configured to perform, before a transfer robot transfers the substrate to the high-pressure chamber for treating the substrate, a first operating of opening the first valve and closing the second valve and a third valve, and a second operating of closing the first valve and the second valve, and opening the third valve.

A substrate processing apparatus using a supercritical fluid that can remove floating particles is provided. The substrate processing apparatus comprises a vessel including a processing space for processing a substrate, and a first vessel and a second vessel configured to be combined to be open and closed, wherein the first vessel and the second vessel seal the processing space in a closed position, and the first vessel and the second vessel open the processing space in an open position; a clamping unit configured to clamp the first vessel and the second vessel in the closed position; and an intake unit configured to intake a particle by including an intake member positioned to correspond to an open space between the first vessel and the second vessel in the open position.

Embodiments described herein generally relate to a processing chamber incorporating a small thermal mass which enable efficient temperature cycling for supercritical drying processes. The chamber generally includes a body, a liner, and an insulation element which enables the liner to exhibit a small thermal mass relative to the body. The chamber is also configured with suitable apparatus for generating and/or maintaining supercritical fluid within a processing volume of the chamber.