A method for cleaning a chamber of a substrate processing system includes maintaining the chamber at a first predetermined pressure and, without a substrate present within the chamber, providing, from a fluid source via a nozzle assembly, a fluid, and injecting the fluid into the chamber via the nozzle assembly. The fluid source is maintained at a second predetermined pressure that is greater than the first predetermined pressure. Injecting the fluid into the chamber maintained at the first predetermined pressure causes the fluid to aerosolize into a mixture of gas and solid particles.

The present invention relates to a dry cleaning technology for a cleaning a surface of an object to be cleaned by adiabatically expanding liquid carbon dioxide to generate sublimable dry ice particles and carrying the dry ice particles on high-speed carrier gas to be sprayed onto the surface of the object to be cleaned, wherein an end of a liquid carbon dioxide nozzle further protrudes to the outside relative to an end of a carrier gas nozzle to prevent a growth of dry ice particles in the carrier gas nozzle, a hydrophobic coating is formed on a surface of the liquid carbon dioxide nozzle to prevent a formation of water droplets and to prevent an occurrence of irregular dry ice particles, thereby effectively preventing damage to a surface of an object to be cleaned and being advantageous in an economical aspect by significantly reducing consumption of liquid carbon dioxide.

A substrate processing method and apparatus for preventing evaporation of an anti-drying fluorine-containing organic solvent from a substrate during transportation of the substrate into a processing container and can prevent decomposition of a fluorine-containing organic solvent in the processing container. A substrate, the surface of which is covered with a first fluorine-containing organic solvent, is carried into a processing container. The first fluorine-containing organic solvent is removed from the substrate surface by forming a high-pressure fluid atmosphere of a mixture of the first fluorine-containing organic solvent and a second fluorine-containing organic solvent, having a lower boiling point than the first fluorine-containing organic solvent, in the processing container e.g. by supplying a high-pressure fluid of the second fluorine-containing organic solvent into the processing container. Thereafter, a fluid in the state of a high-pressure fluid or a gas is discharged from the processing container to obtain the substrate in the dried state.

A method and apparatus for cleaning a process chamber are provided. In one embodiment, a process chamber is provided that includes a remote plasma source and a process chamber having at least two processing regions. Each processing region includes a substrate support assembly disposed in the processing region, a gas distribution system configured to provide gas into the processing region above the substrate support assembly, and a gas passage configured to provide gas into the processing region below the substrate support assembly. A first gas conduit is configured to flow a cleaning agent from the remote plasma source through the gas distribution assembly in each processing region while a second gas conduit is configured to divert a portion of the cleaning agent from the first gas conduit to the gas passage of each processing region.

Implementations disclosed herein generally relate to systems and methods of protecting a substrate support in a process chamber from cleaning fluid during a cleaning process. The method of cleaning the process chamber includes positioning in the process chamber a cover substrate above a substrate support and a process kit that separates a purge volume from a process volume. The method of cleaning includes flowing a purge gas in the purge volume to protect the substrate support and flowing a cleaning fluid to a process volume above the cover substrate, flowing the cleaning fluid in the process volume to an outer flow path, and to an exhaust outlet in the chamber body. The purge volume is maintained at a positive pressure with respect to the process volume to block the cleaning fluid from the purge volume.

A method of removing particles from a surface of a reticle is disclosed. The reticle is placed in a carrier, a source gas is flowed into the carrier, and a plasma is generated within the carrier. Particles are then removed from a surface of the reticle using the generated plasma. A system of removing particles from a surface includes a carrier configured to house a reticle, a reticle stocker including the carrier, a power supply configured to apply a potential between an inner cover and an inner baseplate of the carrier, and a gas source configured to flow a gas into the carrier. A plasma may be generated within the carrier, and particles can be removed from a surface of the reticle using the generated plasma. An acoustic energy source configured to agitate at least one of the source gas and the generated plasma may be provided to facilitate particle removal using an agitated plasma.

The substrate treating apparatus includes a process chamber in which an organic solvent remaining on a substrate is dissolved by using a fluid, that is provided as a supercritical fluid, to dry the substrate and a recycling unit including a recycler separating the organic solvent from the fluid discharged from the process chamber to recycle the fluid. The recycler includes a column having a space in which an absorbent for absorbing the organic solvent is stored, a supply tube supplying the fluid discharged from the process chamber into the space of the column, a discharge tube discharging the fluid from which the organic solvent is separated in the column, a gas supply tube supplying a purge gas into the column so that the organic solvent is separated from the absorbent, and an exhaust tube exhausting the purge gas containing the organic solvent to the outside of the column.

A substrate drying device includes: an upper chamber body including an inlet configured to introduce supercritical fluid into a chamber space; a lower chamber body including an outlet configured to discharge the supercritical fluid out of the chamber space; and a plurality of vibration devices including a plurality of vibration modules configured to generate ultrasonic waves having different frequencies from each other, and substrate holders arranged on the plurality of vibration modules and configured to hold a wafer, wherein the plurality of vibration devices are arranged in the chamber space.

Disclosed is a supercritical-state cleaning system, comprising a cleaning chamber (4), a gas booster apparatus (11), a first heating apparatus (5), and a carbon dioxide supply apparatus. The cleaning chamber (4) is separately connected to the first heating apparatus (5) and the carbon dioxide supply apparatus. A vacuum pump set (1) is connected to the cleaning chamber (4). Compared with the prior art, in the Invention, air introduced when a workpiece enters a cleaning chamber is completely removed, so as to prevent mixing of CO.sub.2 and air, thereby improving a cleaning effect.

A substrate processing apparatus includes a chamber providing a space in which a substrate is processed, a first substrate support within the chamber and configured to support the substrate when the substrate is loaded into chamber, a second substrate support within the chamber and configured to support the substrate in a height greater than the height in which the first substrate supports the substrate, a first supply port through which a supercritical fluid is supplied to a first space under the substrate of a chamber space, a second supply port through which the supercritical fluid is supplied to a second space above the substrate of the chamber space, and an exhaust port through which the supercritical fluid is exhausted from the chamber.