A sealing member for use in sealing a chamber for treating a substrate, the sealing member inserted in a groove formed in the chamber, includes a bottom part, a top part opposite the bottom part, an inner part connecting a first side of the bottom part to the top part, an outer part opposite the inner part and connecting a second side of the bottom part to the top part, and a recessed portion between the top part and the outer part.

The invention relates to a device for generating a CO.sub.2 snow jet, comprising an expansion channel (6) which extends in a flow direction (14) for generating a CO.sub.2 gas/CO.sub.2 snow mixture based on liquid CO.sub.2, said expansion channel having an inlet opening (18) for supplying liquid CO.sub.2 and an outlet opening (22) for discharging the CO.sub.2 gas/CO.sub.2 snow mixture. The device also comprises a nozzle for generating an outer jet which surrounds and accelerates the CO.sub.2 gas/CO.sub.2 snow mixture discharged from the outlet opening of the expansion channel. The expansion channel has multiple channel sections (36a, 36b, 36c, 36d, 36e) arranged one behind the other in the flow direction, wherein the expansion channel cross section (40) that lies on a plane orthogonal to the flow direction changes locally in a particular transition or transition region (38a, 38b, 38c, 38d, 38e, 38f) between the channel sections, and the expansion channel (6) cross section (46d) at the upstream end (48d) of a particular channel section (36d) is larger than the expansion channel (6) cross section (46c) at the upstream end (48c) of the channel section (36c) arranged upstream of said channel section (36d) in the flow direction (14).

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus comprises a first treating part performing, a liquid treatment on a plurality of substrates in a batch-type treating, method and a second treating part treating the substrates which have been treated at the first treating part, and performing, the liquid treatment or a drying treatment on a single substrate a single-type treating method.

The present disclosure provides a method and a cleaning apparatus for cleaning semiconductor wafers. The cleaning apparatus includes a plurality of cleaning tanks, a dipping tank, a first robot hand, a second robot hand, and at least one drying chamber. The plurality of cleaning tanks is configured to clean a plurality of wafers held by a cassette by cleaning agents. The plurality of wafers is cleaned in the plurality of cleaning tanks through a batch process. The dipping tank is configured to rinse the plurality of wafers by a replacement agent. The at least one drying chamber is configured to dry the wafer taken by the second robot hand with single wafer process.

In a cleaning method for removing adhesive residues from surfaces, in particular after separating an adhesive connection between adhesively joined partners, liquid carbon dioxide from a reservoir enters a jet, apparatus and is guided there through a first dosing unit into an expansion chamber wherein a cold-resistant liquid is then supplied to a mixture created in the expansion chamber from gaseous carbon dioxide and carbon dioxide particles and wherein the mixture, to which the cold-resistant liquid has been added, exits the jet apparatus via an outlet opening thereof. Furthermore, a jet apparatus removes adhesive residues from surfaces.

A substrate processing apparatus includes first processors, second processors, a transfer module and a controller. Each of the first processors is configured to perform a first processing on a substrate. Each of the second processors is configured to perform a second processing on the substrate on which the first processing is performed. The transfer module is configured to transfer the substrate to the first processors and the second processors. The controller is configured to control the first processors, the second processors and the transfer module. The controller controls a start timing for a first transfer processing of transferring the substrates to the first processor such that a timing of a second transfer processing of transferring the substrate having a liquid film formed thereon to the second processor from the first processor and a timing when another substrate is transferred by the transfer module are not overlapped with each other.

Vessels can be become fouled due to normal operation thereof, for example, during lignocellulosic biomass hydrolysis, and the vessel will become inoperable unless the fouling is removed from the vessel. Accordingly, methods are disclosed herein for removing fouling substances from the interior surfaces of fouled pressurized vessels. The methods utilize a brief rapid change of pressure in the vessel. In some embodiments, the rapid pressure change is a decrease, and the rapid pressure change causes, for example, increased velocity of the fluid flowing in the vessel, flashing of a portion of the fluid to vapor, and removal of the fouling substance adhered to the interior surface of the vessel.

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a process chamber that provides a treatment space, in which a substrate is treated, in an interior thereof, a fluid supply unit that supplies a fluid into the process chamber, and an exhaust units including an exhaust line, through which the fluid in the process chamber is exhausted, the fluid supply unit includes a supply tank, in which the fluid is stored, a supply line connecting the supply tank and the process chamber, a branch line branched from the supply line at a first point of the supply line, and a controller that controls the fluid supply unit, and the controller controls the fluid supply unit such that the fluid is drained from the supply line through the branch line shortly before the fluid is supplied into the process chamber.

The inventive concept provides an apparatus for treating a substrate by using a supercritical fluid. In an embodiment, the apparatus may include a process chamber that provides a treatment space, and including a chamber heater that increases a temperature of an interior of the treatment space, a substrate support provided in the treatment space and that supports the substrate, and a substrate heating member that heats a lower surface of the substrate while contacting the lower surface of the substrate.

Various embodiments of the present disclosure are directed to methods of removing liquid from a lumen of a hydraulic control line by a back-pulse flushing procedure. In one example embodiment, the back-pulse flushing procedure includes pressurizing the hydraulic control line to a pressure P1 by adding pressurized carbon dioxide into a first end of the hydraulic control line, where the carbon dioxide is in a liquid or supercritical state, maintaining the carbon dioxide in the liquid or supercritical state while the carbon dioxide diffuses through and accumulates in the matter, and depressurizing the hydraulic control line to cause the carbon dioxide to change into a gas state and press the matter out of the first end of the hydraulic control line.