An injecting assembly includes a nozzle that is formed with a mixture channel, a mixture opening communicating with the mixture channel, a shaper channel, and a shaper opening communicating with the shaper channel. A mixture of a precursor and a supercritical fluid (SCF) passes through the mixture channel. Waves of the mixture are periodically injected toward a surface of a substrate at the mixture opening. A stream of a shaping fluid flows through the shaper channel and is injected toward the substrate at the shaper opening. The stream of the shaping fluid confines the waves of the mixture. Molecules of the precursor penetrate into the substrate by impact of the wave fronts reaching the surface of the substrate. The molecules of the precursor can react with molecules of a material of the substrate to improve surface properties of the substrate.

Embodiments of the inventive concept provide an apparatus for treating a substrate. According to an exemplary embodiment, an apparatus for treating a substrate comprises a first valve and a second valve sequentially installed along a direction from a fluid supplying source to a high-pressure chamber in the supply line; a branch line branching from the supply line between the first valve and the second valve and connected to an exhaust line; a third valve installed on the branch line; an exhaust unit exhausting the process fluid inside the high-pressure chamber; and a controller, wherein the controller is configured to perform, before a transfer robot transfers the substrate to the high-pressure chamber for treating the substrate, a first operating of opening the first valve and closing the second valve and a third valve, and a second operating of closing the first valve and the second valve, and opening the third valve.

Embodiments of the present disclosure generally relate to a method of cleaning a substrate. More specifically, embodiments of the present disclosure relate to a method of cleaning a substrate in a manner that reduces or eliminates the negative effects of line stiction between semiconductor device features. In an embodiment, a method of cleaning a substrate includes exposing a substrate having high aspect ratio features formed thereon to a first solvent to remove an amount of a residual cleaning solution disposed on a surface of the substrate, exposing the surface of the substrate to a second solvent to remove the first solvent disposed on the surface of the substrate, exposing the surface of the substrate to a supercritical fluid to remove the second solvent disposed on the surface of the substrate, and exposing the surface of the substrate to electromagnetic energy.

A substrate treating apparatus is disclosed. The apparatus may include a housing including an upper body and a lower body coupled to each other to define a treatment space, the lower body being provided below the upper body, a supporting unit coupled to the upper body, the supporting unit supporting an edge of a substrate disposed in the treatment space, a fluid supplying unit configured to supply fluid into the treatment space, a sealing member provided between and in contact with the upper and lower bodies, the sealing member hermetically isolating the treatment space from an outer space, and an isolation plate installed between the sealing member and the supporting unit. The isolation plate may be provided to face the sealing member.

A substrate processing apparatus performs increasing a pressure within a processing vessel up to a processing pressure higher than a threshold pressure of a processing fluid by supplying the processing fluid into the processing vessel in which a substrate having thereon a liquid is accommodated; and supplying the processing fluid into the processing vessel and draining the processing fluid while maintaining the pressure within the processing vessel at a level allowing the processing fluid to be maintained in a supercritical state. The increasing of the pressure includes: increasing the pressure to a first pressure; and increasing the pressure to the processing pressure from the first pressure. A temperature of the substrate is controlled to a first temperature in the increasing of the pressure to the first pressure, and is controlled to a second temperature higher than the first temperature in the increasing of the pressure to the processing pressure.

A method of manufacturing a stretched display panel includes: cutting the TFT substrate to a desired size; cutting the color filter substrate; forming an open-circuit line for open-circuiting a portion defined between a horizontal pixel line that is located at an end of the TFT substrate and another horizontal pixel line adjacent thereto in order to prevent electrical noise due to the horizontal pixel lines being introduced into the end of the TFT substrate exposed from the pixel exposure portion; and forming a reinforcement seal for covering the pixel exposure portion using a reinforcement material in order to prevent occurrence of short circuit due to introduction of foreign matter into a gap defined between the horizontal pixel line and the other horizontal pixel line and at the same time to increase rigidity of the pixel exposure portion.

Disclosed is a substrate processing apparatus including a dry processing unit and a controller. The dry processing unit includes: a chamber that accommodates the substrate; a supercritical processing liquid supply unit that supplies a supercritical processing liquid to the substrate; a heating unit that heats an inside of the chamber; and a discharge unit that discharges a fluid in the chamber from the chamber. The controller controls the supercritical processing liquid supply unit, the heating unit, and the discharge unit such that the supercritical processing liquid is supplied to the substrate before or after the substrate is accommodated in the chamber, the inside of the chamber is heated to change the supercritical processing liquid into a supercritical fluid or a subcritical fluid, and the supercritical fluid or the subcritical fluid is discharged from the chamber.

Methods of drying a semiconductor substrate may include applying a drying agent to a semiconductor substrate, where the drying agent wets the semiconductor substrate. The methods may include heating a chamber housing the semiconductor substrate to a temperature above an atmospheric pressure boiling point of the drying agent until a vapor-liquid equilibrium of the drying agent within the chamber has been reached. The methods may further include venting the chamber, where the venting vaporizes the liquid phase of the drying agent from the semiconductor substrate.

A method of manufacturing a stretched display panel includes: cutting the TFT substrate to a desired size; cutting the color filter substrate; forming an open-circuit line for open-circuiting a portion defined between a horizontal pixel line that is located at an end of the TFT substrate and another horizontal pixel line adjacent thereto in order to prevent electrical noise due to the horizontal pixel lines being introduced into the end of the TFT substrate exposed from the pixel exposure portion; and forming a reinforcement seal for covering the pixel exposure portion using a reinforcement material in order to prevent occurrence of short circuit due to introduction of foreign matter into a gap defined between the horizontal pixel line and the other horizontal pixel line and at the same time to increase rigidity of the pixel exposure portion.

A substrate processing apparatus includes a vessel providing a processing space for processing a substrate, a substrate support supporting the substrate loaded in the processing space, and a barrier between a side wall of the vessel and the substrate support and surrounding an edge of the substrate supported by the substrate support.