An apparatus for treating a substrate is provided. The apparatus for treating the substrate includes a high pressure chamber to provide a treatment space to perform a process of treating the substrate using a process fluid, a fluid supply source to provide the process fluid to the high pressure chamber, a fluid supply unit to supply the process fluid to the treatment space of the high pressure chamber, an exhaust unit to exhaust the process fluid in the high pressure chamber, and a pre-vent unit to vent a process fluid remaining inside a supply line.

There is provided a method of cleaning a substrate processing apparatus in which a drying process of drying a substrate whose surface is wet with a liquid is performed by bring the substrate into contact with a supercritical fluid, the method including: diffusing a first cleaning fluid in an interior of the substrate processing apparatus, the first cleaning fluid being obtained by mixing the supercritical fluid with a solvent containing polar molecules and having a lower boiling point than a boiling point of the liquid; and discharging the first cleaning fluid from the interior of the substrate processing apparatus, that occurs after the diffusing the first cleaning fluid.

A liquid film of a processing liquid containing at least one of sulfuric acid, a sulfate, peroxosulfuric acid, and a peroxosulfate, or a processing liquid containing hydrogen peroxide is formed on a substrate. A plasma is radiated to the liquid film. Thereby, a substrate processing method in which substrate processing using an oxidizing power of the processing liquid can be efficiently performed is provided.

A substrate processing apparatus includes a vessel providing a processing space for processing a substrate, a substrate support supporting the substrate loaded in the processing space, and a barrier between a side wall of the vessel and the substrate support and surrounding an edge of the substrate supported by the substrate support.

An apparatus for treating a substrate includes a light treatment chamber having an interior space, a support unit that supports the substrate in the interior space, and an irradiation unit that irradiates light to the substrate in the interior space to remove organic matter remaining on the substrate, in which the irradiation unit includes a first light source that irradiates first light to the substrate and a second light source that irradiates, to the substrate, second light having a different wavelength range from the first light.

Disclosed is a method of treating a substrate. In one embodiment, supercritical fluid is supplied to a treatment space in a chamber such that the substrate in the treatment space is treated. The supercritical fluid is supplied to the treatment space while exhausting the treatment space. A temperature of the supercritical fluid supplied when exhausting the treatment space is higher than a temperature of the supercritical fluid supplied to the treatment space for treating the substrate.

Systems and methods are provided for removing adhesive features. One embodiment is a method for operating a cryogenic-assisted adhesive a removal tool. The method includes dispensing a cryogenic fluid onto an adhesive feature disposed at a surface of a structure, cooling the adhesive feature to cause a physical change making the adhesive feature brittle, and operating the cryogenic-assisted adhesive removal tool to cleave the adhesive feature from the surface while the adhesive feature is physically changed.

An apparatus for treating a substrate includes a process chamber having a treatment space for treating the substrate; a fluid supply unit for supplying fluid to the treatment space, wherein the fluid supply unit includes: a supply pipe connected to the treatment space to supply the fluid to the treatment space; a pump installed in the supply pipe to provide flow pressure to the fluid; a vent line installed between the pump and the process chamber to discharge pressure in the fluid to an outside; a relief valve installed in the vent line to open and close the vent line; and a reservoir installed between the pump and a branch point wherein the vent line branches from the supply pipe, wherein the reservoir has a cross-sectional area larger than a cross-sectional area of a portion of the supply pipe located between the pump and the branch point.

An apparatus for treating a substrate includes a light treatment chamber having an interior space, a support unit that supports the substrate in the interior space, and an irradiation unit that irradiates light to the substrate in the interior space to remove organic matter remaining on the substrate, in which the irradiation unit includes a first light source that irradiates first light to the substrate and a second light source that irradiates, to the substrate, second light having a different wavelength range from the first light.

A substrate processing apparatus processes a surface of a substrate with a processing fluid and includes a support tray in which a concave part for housing the substrate is provided on an upper surface thereof; a storage container in which a cavity is formed, wherein the support tray may be stored in a horizontal posture in the cavity; and a fluid supply part supplying the processing fluid to the cavity, wherein the storage container has a flow path which receives the processing fluid and discharges the processing fluid in a horizontal direction into the cavity from a discharge port that opens on a side wall surface of the cavity and toward the cavity, and a lower end position of the discharge port in a vertical direction is the same as or higher than a position of the upper surface of the support tray stored in the cavity.