A method of removing a lens forming material deposited on a lens forming surface (1) of a reusable glass mold for forming ophthalmic lenses, in particular contact lenses or intraocular lenses, comprises the steps of providing a plasma (2), exposing the lens forming surface (1) of the reusable glass mold to the plasma (2) for removing the lens forming material deposited on the lens forming surface (1). The plasma (2) is generated under atmospheric pressure and potential-free, or is generated under reduced pressure.

There is provision of a plasma processing apparatus including a chamber; a gas inlet for supplying a first gas containing fluorine and supplying a second gas into the chamber; a plasma generator configured to generate a plasma from the first gas and the second gas supplied into the chamber; an optical emission spectrometer (OES) configured to measure light emission intensities of first radicals and second radicals in the plasma, the first radicals originating from the first gas, the second radicals originating from the second gas; an expendable part disposed in the chamber; and a processor configured to determine a wastage rate of the expendable part based on the measured light emission intensities of the first radicals and the second radicals.

A method for controlling an electrostatic attractor, which attracts an electrode to a gas plate provided in an upper portion of a plasma processing apparatus, includes, among a plasma generation period in which plasma is generated by the plasma processing apparatus and an idle period in which no plasma is generated by the plasma processing apparatus, applying voltages having polarities different from each other to first and second electrodes of the electrostatic attractor in at least the idle period.

An embodiment of the inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a lower electrode having an upper surface, on which a substrate is positioned, and a plasma generating device provided at an upper portion of the lower electrode, having an upper electrode, and having independent discharge spaces divided by a plurality of partition walls, and a controller that performs a control to independently supply a reaction gas into the independent discharge spaces, respectively.

Disclosed herein are devices and methods for cleaning, verifying cleaning, and coating a ferrule end face in a single housing thereby preventing contamination of the ferrule end face and associated optical fiber end face. Also disclosed herein is a fiber optic assembly including a ferrule; an optical fiber extending through the ferrule to an end face of the ferrule; and a coating on the end face of the ferrule protecting the optical fiber. The coating is prepared by curing a vinyl-terminated polydimethylsiloxane with a crosslinker in the presence of a catalyst.

Porogen accumulation in a UV-cure chamber is reduced by removing outgassed porogen through a heated outlet while purge gas is flowed across a window through which a wafer is exposed to UV light. A purge ring having specific major and minor exhaust to inlet area ratios may be partially made of flame polished quartz to improve flow dynamics. The reduction in porogen accumulation allows more wafers to be processed between chamber cleans, thus improving throughput and cost.

A method and apparatus for the use of hydrogen plasma treatments is described herein. The process chamber includes a plurality of chamber components. The plurality of chamber components may be coated with a yttrium zirconium oxide composition, such as a Y.sub.2O.sub.3—ZrO.sub.2 solid solution. Some of the plurality of chamber components are replaced with a bulk yttrium zirconium oxide ceramic. Yet other chamber components are replaced with similar components of different materials.

A device for treating 3D powder printing elements includes a first chamber with a first partial chamber and a second partial chamber separated by at least one screen grid. Grid meshes allow compressed powder residues to pass through. A rotation means rotates the first chamber about an axis of rotation, in particular with a rotary passage. The screen grid is inclined, in particular perpendicular, to the axis of rotation of the first chamber. A filling region allows filling the 3D powder printing elements into the first partial chamber. Gas medium is supplied in the first chamber, in particular in the first partial chamber. Gas medium suction means extract plastic powder residues from the first chamber, in particular from the second partial chamber. The gas medium suction means are mounted in or parallel to the axis of rotation and/or centered by the rotary means, in particular within the rotary passage.

Methods for pre-cleaning substrates having metal and dielectric surfaces are described. A substrate comprising a surface structure with a metal bottom, dielectric sidewalls, and a field of dielectric is exposed to a dual plasma treatment in a processing chamber to remove chemical residual and/or impurities from the metal bottom, the dielectric sidewalls, and/or the field of the dielectric and/or repair surface defects in the dielectric sidewalls and/or the field of the dielectric. The dual plasma treatment comprises a direct plasma and a remote plasma.

A technique improves selectivity in etching of a silicon-containing film over etching of a mask in plasma etching. A substrate processing method includes providing a substrate in a chamber in a plasma processing apparatus. The substrate includes a silicon-containing film and a mask on the silicon-containing film. The substrate processing method further includes controlling a temperature of a substrate support on which the substrate is placed to 0° C. or lower. The substrate processing method further includes etching the silicon-containing film with plasma generated from a first process gas containing a hydrogen fluoride gas and at least one carbon-containing gas selected from the group consisting of a fluorocarbon gas and a hydrofluorocarbon gas. The etching includes etching the film with a chemical species contained in the plasma. The hydrogen fluoride gas has a highest flow rate among non-inert components of the first process gas.