A method for removing particles from a semiconductor wafer surface is disclosed. A wafer is being spun on a spin coater contained within a condensing environment. Liquid vapor is then infused into the condensing environment to allow some of the liquid vapor to be condensed onto a surface of the wafer on which particles may adhere while the wafer is being spun. Next, a set of light pulses is applied to the surface of the spinning wafer. Finally, an electric grid is utilized to remove the particles off the surface of the wafer.

To provide a charged particle beam apparatus. The charged particle beam apparatus includes: a stage on which a sample is placed; a cleaner configured to remove a contaminant on the sample; and a stage control unit configured to adjust a relative positional relationship between the cleaner and the sample by moving the stage during use of the cleaner.

A wafer-cleaning apparatus includes an inner pin that supports a wafer. The wafer-cleaning apparatus further includes a nozzle disposed above the inner pin, a light source disposed under the inner pin, a window disposed between the light source and the wafer, and a window protector disposed between the wafer and the window. The nozzle supplies a chemical liquid to the wafer and the inner pin distributes a portion of the chemical liquid on an upper surface of the wafer by rotating the wafer. The window protector receives a portion of the chemical liquid that flows out of the wafer and the light source supplies the light to the wafer through the window protector and the window.

In a method is provided for removing a material from a substrate, a plasma is generated at atmospheric pressure. The plasma includes an energetic species reactive with one or more components of the material. The plasma is flowed from an outlet as a plasma plume that includes periodic regions of high plasma density and low plasma density. The material is exposed to the plasma plume. At least one component of the material reacts with the energetic species, and at least one other component of the material is physically impacted and moved by one or more of the regions of high plasma density.

A method for cleaning a reflective photomask, a method of manufacturing a semiconductor structure, and a system for forming a semiconductor structure are provided. The method for cleaning a reflective photomask includes placing a photomask in a first chamber, and performing a dry cleaning operation on the photomask in the first chamber, wherein the dry cleaning operation includes providing hydrogen radicals to the first chamber, generating hydrocarbon gases as a result of reactions of the hydrogen radicals, and removing the hydrocarbon gases from the first chamber.

A sucker rod cleaning system includes an inductive heating device, a feed mechanism, a first support and a second support. An electromagnet of inductive heating device includes a wire coil head that is configured to inductively heat a sucker rod positioned within a heating zone. The feed mechanism is configured to feed a sucker rod through the heating zone in a feed direction. The first support is positioned on an upstream side of the wire coil head, and is configured to support a portion of a sucker rod as it is fed through the heating zone by the teed mechanism. The second support is positioned on a downstream side of the wire coil head, and is configured to support a portion of a sucker rod as it is fed through the heating zone by the feed mechanism.

A method for cleaning a reflective photomask, a method of manufacturing a semiconductor structure, and a system for forming a semiconductor structure are provided. The method for cleaning a reflective photomask includes placing a photomask in a first chamber, and performing a dry cleaning operation on the photomask in the first chamber, wherein the dry cleaning operation includes providing hydrogen radicals to the first chamber, generating hydrocarbon gases as a result of reactions of the hydrogen radicals, and removing the hydrocarbon gases from the first chamber.

According to one embodiment, a transfer apparatus includes a coating part for coating an uncured resin on a substrate, a substrate installation part for positioning and installing the substrate integrally, a mold installation part for installing a sheet-like mold, a transfer roller for transferring a fine transfer pattern formed on the mold to the resin coated on the substrate, and a plasma unit for cleaning the mold by irradiating plasma to the mold peeled off from the resin after transferring. After cleaning by the plasma using the plasma unit, the cleaned mold is used again for transferring of the transfer pattern.

Embodiments of the present disclosure generally relate to methods for cleaning a chamber comprising introducing a gas to a processing volume of the chamber, providing a first radiofrequency (RF) power having a first frequency of about 40 MHz or greater to a lid of the chamber, providing a second RF power having a second frequency to an electrode disposed in a substrate support within the processing volume, and removing at least a portion of a film disposed on a surface of a chamber component of the chamber. The second frequency is about 10 MHz to about 20 MHz.

Methods and apparatus leverage dielectric barrier discharge (DBD) plasma to treat samples for surface modification prior to photomask application and for photomask cleaning. In some embodiments, a method of treating a surface with AP plasma includes igniting plasma over an ignition plate where the AP plasma is formed by one or more plasma heads of an AP plasma reactor positioned above the ignition plate, monitoring characteristics of the AP plasma with an optical emission spectrometer (OES) sensor to determine if stable AP plasma is obtained and, if so, moving the AP reactor over a central opening of an assistant plate where the central opening contains a sample under treatment and where the assistant plate reduces AP plasma arcing on the sample during treatment. The AP reactor scans back and forth over the central opening of the assistant plate while maintaining stabilized AP plasma to treat the sample.