An electronic device with antibacterial effect detection and a portable device are provided. The electronic device includes an antibacterial housing, a light emitting unit, a light receiving unit and a processing unit. The antibacterial housing has a concave hole, which gradually shrinks from the inside to the outside. The light emitting unit is arranged under the concave hole of the antibacterial housing. The light emitting unit is used for emitting a detection light toward an inclined side wall of the concave hole. The light receiving unit is arranged under the concave hole of the antibacterial housing. The light receiving unit is used for receiving a detection light reflected from the inclined side wall of the concave hole. The processing unit is used for analyzing the antibacterial effect of the antibacterial housing according to the detection light.

Exemplary semiconductor processing methods to clean a substrate processing chamber are described. The methods may include depositing a dielectric film on a first substrate in a substrate processing chamber, where the dielectric film may include a silicon-carbon-oxide. The first substrate having the dielectric film may be removed from the substrate processing chamber, and the dielectric film may be deposited on at least one more substrate in the substrate processing chamber. The at least one more substrate may be removed from the substrate processing chamber after the dielectric film is deposited on the substrate. Etch plasma effluents may flow into the substrate processing chamber after the removal of a last substrate having the dielectric film. The etch plasma effluents may include greater than or about 500 sccm of NF.sub.3 plasma effluents, and greater than or about 1000 sccm of O.sub.2 plasma effluents.

A plasma purge method that is performed after dry cleaning in a process container and before applying a deposition process to a substrate includes: (a) activating and supplying a first process gas containing N.sub.2 in the process container; and (b) activating and supplying a second process gas containing H.sub.2 and O.sub.2 in the process container.

A method of manufacturing a surgical instrument that includes an energized feature operable to apply ultrasonic energy or RF energy to tissue. The method includes forming at least one of a microscopic surface pattern or a nanoscopic surface roughness into a base surface of the energized feature to produce at least one recessed portion. The method also includes applying a hydrophobic coating that includes at least one of silicone, titanium nitride, chromium nitride, or titanium aluminum nitride to at least the recessed portion of the energized feature after forming at least one of the microscopic surface pattern or the nanoscopic surface roughness.

Embodiments of the present disclosure generally relate to methods of depositing carbon film layers greater than 3,000 Å in thickness over a substrate and surface of a lid of a chamber using dual frequency, top, sidewall and bottom sources. The method includes introducing a gas to a processing volume of a chamber. A first radiofrequency (RF) power is provided having a first frequency of about 40 MHz or greater to a lid of the chamber. A second RF power is provided having a second frequency to a bias electrode disposed in a substrate support within the processing volume. The second frequency is about 10 MHz to about 40 MHz. An additional third RF power is provided having lower frequency of about 400 kHz to about 2 MHz to the bias electrode.

Examples disclosed herein relate to a method and apparatus for cleaning and repairing a substrate support having a heater disposed therein. A method includes (a) cleaning a surface of a substrate support having a bulk layer, the substrate support is disposed in a processing environment configured to process substrates. The cleaning process includes forming a plasma at a high temperature from a cleaning gas mixture having a fluorine containing gas and oxygen. The method includes (b) removing oxygen radicals from the processing environment with a treatment plasma formed from a treatment gas mixture. The treatment gas mixture includes the fluorine containing gas. The method further includes (c) repairing an interface of the substrate support and the bulk layer with a post-treatment plasma. The post-treatment plasma is formed from a post-treatment gas mixture including a nitrogen containing gas. The high temperature is greater than or equal to about 500 degrees Celsius.

There is provided a gas cluster processing device for performing a predetermined process on a workpiece by irradiating the workpiece with a gas cluster, including: a processing container in which the workpiece is disposed; a gas supply part configured to supply a gas for generating the gas cluster; a flow rate controller configured to control a flow rate of the gas supplied from the gas supply part; a cluster nozzle configured to receive the gas for generating the gas cluster at a predetermined supply pressure, spray the gas into the processing container maintained in a vacuum state, and convert the gas into the gas cluster through an adiabatic expansion; and a pressure control part provided in a pipe between the flow rate controller and the cluster nozzle and including a back pressure controller configured to control a supply pressure of the gas for generating the gas cluster.

A substrate processing apparatus and a substrate processing method using plasma capable of controlling an etch rate and/or uniformity according to a position of a substrate are provided. The substrate processing apparatus includes a first space disposed between an electrode and an ion blocker; a second space disposed between the ion blocker and a shower head; a processing space for processing a substrate under the shower head; a first gas supply module for providing a first gas for generating plasma in the first space; a second gas supply module for providing a second gas to be mixed with the effluent of the plasma in the processing space; and a third gas supply module for providing a third gas to be mixed with the effluent of the plasma in the processing space.

Plasma processing apparatus for processing a workpiece are provided. In one example embodiment, a plasma processing apparatus for processing a workpiece includes a processing chamber, a plasma chamber separated from the processing, and an inductively coupled plasma source configured to generate a plasma in the plasma chamber. The apparatus includes a pedestal disposed within the processing chamber configured to support a workpiece. The apparatus includes an insert disposed in the plasma chamber movable to one or more vertical positions within the plasma chamber. Methods for processing of workpieces are also provided.

A box-type dust-free workshop includes a box body, an exit-entrance arranged on the box body, and a purification system, a ventilation system and an electrical system arranged in the box body. The box body may be formed by arranging a plurality of box-type units, and the box-type units are communicated with one another internally; or the interior of the box body may also be divided into a plurality of areas through partition plates. The box-type dust-free workshop can be put into use by arranging related facilities in the box body, does not need to construct a building, and has mobility.