The present invention provides a method and apparatus for cleaning parts used in substrate processing. In a method for cleaning parts of a substrate processing, plasma generated from cleaning gas is supplied together with a cooling medium to clean the parts, but the cooling medium may be provided at a lower temperature than the plasma.

A plasma processing method includes: supplying a gas into a processing container; and intermittently supplying microwave powers output from a plurality of microwave introducing modules into the processing container. In the intermittently supplying the microwave powers, the supply of all the microwave powers from the plurality of microwave introducing modules is periodically in an OFF state for a given time.

A plasma processing system for cleaning a substrate is provided. The plasma processing system includes a process chamber that includes: a chamber body enclosing an interior volume; and a substrate support disposed in the interior volume. The plasma processing system includes a vacuum pump; a first exhaust line fluidly coupled between the interior volume of the process chamber and the vacuum pump; and a second exhaust line fluidly coupled between the interior volume of the process chamber and the vacuum pump. The first exhaust line and the second exhaust line are arranged to provide alternative paths for the exhaust between the interior volume and the vacuum pump, and the first exhaust line has an internal diameter that is at least 50% smaller than the internal diameter of the second exhaust line.

In a method is provided for removing a material from a substrate, a plasma is generated at atmospheric pressure. The plasma includes an energetic species reactive with one or more components of the material. The plasma is flowed from an outlet as a plasma plume that includes periodic regions of high plasma density and low plasma density. The material is exposed to the plasma plume. At least one component of the material reacts with the energetic species, and at least one other component of the material is physically impacted and moved by one or more of the regions of high plasma density.

Described herein are plasma generation devices and methods of use of the devices. The devices can be used for the cleaning of various surfaces and/or for inhibiting or preventing the accumulation of particulates, such as dust, or moisture on various surfaces. The devices can be used to remove dust and other particulate contaminants from solar panels and windows, or to avoid or minimize condensation on various surfaces. In an embodiment a plasma generation device is provided. The plasma generation device can comprise: a pair of electrodes positioned in association with a surface of a dielectric substrate. The pair of electrodes can comprise a first electrode and a second electrode. The first electrode and second electrode can be of different sizes, one of the electrodes being smaller than the other of the electrodes. The first electrode and second electrode can be separated by a distance and electrically connected to a voltage source.

Provided herein are approaches for in-situ plasma cleaning of ion beam optics. In one approach, a system includes a component (e.g., a beam-line component) of an ion implanter processing chamber. The system further includes a power supply for supplying a first voltage and first current to the component during a processing mode and a second voltage and second current to the component during a cleaning mode. The second voltage and current are applied to one or more conductive beam optics of the component, individually, to selectively generate plasma around one or more of the one or more conductive beam optics. The system may further include a flow controller for adjusting an injection rate of an etchant gas supplied to the beam-line component, and a vacuum pump for adjusting pressure of an environment of the beam-line component.

Components of scientific analytical equipment, and particularly to methods for extending the operational lifetime or otherwise improving the performance of dynodes used in electron multipliers. The method includes: (i) increasing the secondary electron yield of a dynode and/or (ii) decreasing the rate of degradation of electron yield of a dynode, by exposing a dynode electron-emissive surface to an electron flux under conditions causing electron-impact induced removal of a contaminant deposited on the dynode electron-emissive surface. The conditions may be selected such that the electron-mediated removal is enhanced relative to a contaminant deposition process so as to provide a net decrease in the rate of contaminant deposition and/or a decrease in the amount of contaminant present on the dynode electron-emissive surface.

A plasma ashing method is provided. The plasma ashing method includes analyzing the process status of each of a number of semiconductor substrate models undergoing a tested plasma ash process by a residue gas analyzer. The tested plasma ash processes for the semiconductor substrate models utilize a plurality of tested recipes. The plasma ashing method further includes selecting one of the tested recipes as a process recipe for a plasma ash process.

In one implementation, a processing system includes a first transfer chamber coupling to at least one epitaxy process chamber, a second transfer chamber, a transition station disposed between the first transfer chamber and the second transfer chamber, a first plasma chamber coupled to the second transfer chamber for removing oxides from a surface of a substrate, and a load lock chamber coupled to the second transfer chamber. The transition station connects to the first transfer chamber and the second transfer chamber, and the transition station includes a second plasma chamber for removing contaminants from the surface of the substrate.

A plasma cleaning apparatus includes a metal chamber, a gate assembly, a dielectric, and a high voltage electrode.

The metal chamber is connected to a vacuum tube connecting the process chamber and the vacuum pump, and is provided with a first opening. The gate assembly includes a gate support fixed to the metal chamber around the first opening and having a second opening, and a gate coupled to the gate support and having a first position closing the second opening and a second position opening the second opening switchable with each other. The dielectric is coupled to the outside of the gate support around the second opening, and the high voltage electrode is positioned on an outer surface of the dielectric.