The present disclosure relates to a kit for cleaning biological fluids from a surface. The kit comprises at least one protective article of clothing, absorbent powder, a trash bag, surface sanitizer, an absorbent towel, a scraper, a handle, and a dustpan. The dustpan is configured to be securely coupled to the handle. The dustpan has a lid and a base and can alternate between an open position and a self-sealing closed position. In the closed position the base and lid define an interior volume having a height along a y-axis, a width along an x-axis, and a depth along a z-axis. An adhesive strip is coupled to a lip of the dustpan and is configured to interact with a surface and temporarily engage the dustpan with the surface. The absorbent powder is a mixture of a super absorbent polymer and perlite.

The present disclosure relates to a kit for cleaning biological fluids from a surface. The kit comprises at least one protective article of clothing, absorbent powder, a trash bag, surface sanitizer, an absorbent towel, a scraper, a handle, and a dustpan. The dustpan is configured to be securely coupled to the handle. The dustpan has a lid and a base and can alternate between an open position and a self-sealing closed position. In the closed position the base and lid define an interior volume having a height along a y-axis, a width along an x-axis, and a depth along a z-axis. An adhesive strip is coupled to a lip of the dustpan and is configured to interact with a surface and temporarily engage the dustpan with the surface. The absorbent powder is a mixture of a super absorbent polymer and perlite.

Disclosed is a method of treating a substrate. In one embodiment, supercritical fluid is supplied to a treatment space in a chamber such that the substrate in the treatment space is treated. The supercritical fluid is supplied to the treatment space while exhausting the treatment space. A temperature of the supercritical fluid supplied when exhausting the treatment space is higher than a temperature of the supercritical fluid supplied to the treatment space for treating the substrate.

Disclosed is a method of treating a substrate. In one embodiment, supercritical fluid is supplied to a treatment space in a chamber such that the substrate in the treatment space is treated. The supercritical fluid is supplied to the treatment space while exhausting the treatment space. A temperature of the supercritical fluid supplied when exhausting the treatment space is higher than a temperature of the supercritical fluid supplied to the treatment space for treating the substrate.

A method for cleaning semiconductor process equipment and a system thereof are provided. The method is adapted to apply to an object with at least one pollutant thereon and includes steps of providing multi-channel optical tweezers to irradiate the pollutant and locations where the pollutant is neighbor to, in order to let the optical tweezers generate a resultant force to the pollutant; and providing an airflow to the object. The resultant force is greater than a maximum static friction between the pollutant and the object so as to remove the pollutant.

A method for cleaning semiconductor process equipment and a system thereof are provided. The method is adapted to apply to an object with at least one pollutant thereon and includes steps of providing multi-channel optical tweezers to irradiate the pollutant and locations where the pollutant is neighbor to, in order to let the optical tweezers generate a resultant force to the pollutant; and providing an airflow to the object. The resultant force is greater than a maximum static friction between the pollutant and the object so as to remove the pollutant.

A method for cleaning a substrate includes the following: exposing the substrate to a cleaning agent to remove impurities on a surface of the substrate; exposing the substrate to a dewetting chemical agent in a liquid phase to remove the cleaning agent on the surface of the substrate; solidifying the dewetting chemical agent in the liquid phase remaining on the surface of the substrate to obtain the dewetting chemical agent in a solid phase; and sublimating and removing the dewetting chemical agent in the solid phase.

A method for cleaning a substrate includes the following: exposing the substrate to a cleaning agent to remove impurities on a surface of the substrate; exposing the substrate to a dewetting chemical agent in a liquid phase to remove the cleaning agent on the surface of the substrate; solidifying the dewetting chemical agent in the liquid phase remaining on the surface of the substrate to obtain the dewetting chemical agent in a solid phase; and sublimating and removing the dewetting chemical agent in the solid phase.

Disclosed is a wafer processing system, a load lock system, a chamber system, and methods of neutralizing static charges and dislodging particles from a wafer. The chamber system (e.g., load lock system) may comprise a chamber (e.g., load lock chamber), at least one ionizer to ionize inert gas supplied to the chamber (e.g., load lock chamber), at least one bottom nozzle to flow ionized inert gas to a bottom surface of a wafer, at least one top nozzle to flow ionized inert gas to a top surface of a wafer, and at least one exhaust vent to remove the ionized inert gas and any neutralized particles dislodged from the wafer. The chamber may include a single wafer or multiple wafers. The chamber system may further comprise at least one nozzle to flow an inert gas curtain proximate to an exit and/or entry into the chamber.

Disclosed is a wafer processing system, a load lock system, a chamber system, and methods of neutralizing static charges and dislodging particles from a wafer. The chamber system (e.g., load lock system) may comprise a chamber (e.g., load lock chamber), at least one ionizer to ionize inert gas supplied to the chamber (e.g., load lock chamber), at least one bottom nozzle to flow ionized inert gas to a bottom surface of a wafer, at least one top nozzle to flow ionized inert gas to a top surface of a wafer, and at least one exhaust vent to remove the ionized inert gas and any neutralized particles dislodged from the wafer. The chamber may include a single wafer or multiple wafers. The chamber system may further comprise at least one nozzle to flow an inert gas curtain proximate to an exit and/or entry into the chamber.