A device for removing dust from closures which are capable of circulating in a chute extending along a longitudinal axis (y-y′), includes a suction system arranged around the chute and are capable of sucking up the dissociated dust from the closures, and including at least one ionization bar extending longitudinally alongside the chute.

A device for removing dust from closures which are capable of circulating in a chute extending along a longitudinal axis (y-y′), includes a suction system arranged around the chute and are capable of sucking up the dissociated dust from the closures, and including at least one ionization bar extending longitudinally alongside the chute.

An example method to clean a continuous substrate involves applying a high pressure, low flow spray of a first cleaning fluid at the continuous substrate from one or more nozzles to remove particulate matter from the continuous substrate; an agitator, comprising at least one of a megasonic transducer or an ultrasonic transducer, and configured to direct energy at the continuous substrate; and drying the continuous substrate.

An example method to clean a continuous substrate involves applying a high pressure, low flow spray of a first cleaning fluid at the continuous substrate from one or more nozzles to remove particulate matter from the continuous substrate; an agitator, comprising at least one of a megasonic transducer or an ultrasonic transducer, and configured to direct energy at the continuous substrate; and drying the continuous substrate.

An apparatus includes a measurement chamber configured to retain one or more sample substances. The apparatus includes an entrance window mounted on a side of the measurement chamber. The apparatus includes a light source configured to generate an incident light beam. The apparatus includes a Raman sensor configured to collect inelastically scattered light from the chamber, and measure an intensity of a Raman peak of a first substance from the one or more sample substances based on the collected inelastically scattered light. The apparatus further includes a processor configured to (i) calculate a concentration of the first substance based on at least the measured intensity of the Raman peak of the first substance, (ii) determine the end point of a wafer cleaning process based on a calculated concentration of the first substance, and (iii) terminate the wafer cleaning process based on the determined end point.

An apparatus includes a measurement chamber configured to retain one or more sample substances. The apparatus includes an entrance window mounted on a side of the measurement chamber. The apparatus includes a light source configured to generate an incident light beam. The apparatus includes a Raman sensor configured to collect inelastically scattered light from the chamber, and measure an intensity of a Raman peak of a first substance from the one or more sample substances based on the collected inelastically scattered light. The apparatus further includes a processor configured to (i) calculate a concentration of the first substance based on at least the measured intensity of the Raman peak of the first substance, (ii) determine the end point of a wafer cleaning process based on a calculated concentration of the first substance, and (iii) terminate the wafer cleaning process based on the determined end point.

Provided are a method of selectively etching a film primarily containing Si, such as polycrystalline silicon (Poly-Si), single crystal silicon (single crystal Si), or amorphous silicon (a-Si) as well as a method for cleaning by removing a Si-based deposited and/or attached matter inside a sample chamber of a film forming apparatus, such as a chemical vapor deposition (CVD) apparatus, without damaging the apparatus interior. By simultaneously introducing a monofluoro interhalogen gas (XF, where X is any of Cl, Br, and I) and nitric oxide (NO) into an etching or a film forming apparatus, followed by thermal excitation, it is possible to selectively and rapidly etch a Si-based film, such as Poly-Si, single crystal Si, or a-Si, while decreasing the etching rate of SiN and/or SiO.sub.2. It is also possible to perform cleaning by removing a Si-based deposited and/or attached matter inside a film forming apparatus, such as a CVD apparatus, without damaging the apparatus interior.

Provided are a method of selectively etching a film primarily containing Si, such as polycrystalline silicon (Poly-Si), single crystal silicon (single crystal Si), or amorphous silicon (a-Si) as well as a method for cleaning by removing a Si-based deposited and/or attached matter inside a sample chamber of a film forming apparatus, such as a chemical vapor deposition (CVD) apparatus, without damaging the apparatus interior. By simultaneously introducing a monofluoro interhalogen gas (XF, where X is any of Cl, Br, and I) and nitric oxide (NO) into an etching or a film forming apparatus, followed by thermal excitation, it is possible to selectively and rapidly etch a Si-based film, such as Poly-Si, single crystal Si, or a-Si, while decreasing the etching rate of SiN and/or SiO.sub.2. It is also possible to perform cleaning by removing a Si-based deposited and/or attached matter inside a film forming apparatus, such as a CVD apparatus, without damaging the apparatus interior.

A vibration device includes a light-transmissive body defining a cover that includes a detection region of an imaging element as an optical detection element, a tubular support body which includes an interior space that includes the imaging element and is connected to the light-transmissive body, a vibrating body which is coupled to the support body and vibrates the light-transmissive body with the support body provided therebetween, and a drive circuit which drives the vibrating body.

A vibration device includes a light-transmissive body defining a cover that includes a detection region of an imaging element as an optical detection element, a tubular support body which includes an interior space that includes the imaging element and is connected to the light-transmissive body, a vibrating body which is coupled to the support body and vibrates the light-transmissive body with the support body provided therebetween, and a drive circuit which drives the vibrating body.