Provided are a method of selectively etching a film primarily containing Si, such as polycrystalline silicon (Poly-Si), single crystal silicon (single crystal Si), or amorphous silicon (a-Si) as well as a method for cleaning by removing a Si-based deposited and/or attached matter inside a sample chamber of a film forming apparatus, such as a chemical vapor deposition (CVD) apparatus, without damaging the apparatus interior.

By simultaneously introducing a monofluoro interhalogen gas (XF, where X is any of Cl, Br, and I) and nitric oxide (NO) into an etching or a film forming apparatus, followed by thermal excitation, it is possible to selectively and rapidly etch a Si-based film, such as Poly-Si, single crystal Si, or a-Si, while decreasing the etching rate of SiN and/or SiO.sub.2. It is also possible to perform cleaning by removing a Si-based deposited and/or attached matter inside a film forming apparatus, such as a CVD apparatus, without damaging the apparatus interior.

Provided are a method of selectively etching a film primarily containing Si, such as polycrystalline silicon (Poly-Si), single crystal silicon (single crystal Si), or amorphous silicon (a-Si) as well as a method for cleaning by removing a Si-based deposited and/or attached matter inside a sample chamber of a film forming apparatus, such as a chemical vapor deposition (CVD) apparatus, without damaging the apparatus interior.

By simultaneously introducing a monofluoro interhalogen gas (XF, where X is any of Cl, Br, and I) and nitric oxide (NO) into an etching or a film forming apparatus, followed by thermal excitation, it is possible to selectively and rapidly etch a Si-based film, such as Poly-Si, single crystal Si, or a-Si, while decreasing the etching rate of SiN and/or SiO.sub.2. It is also possible to perform cleaning by removing a Si-based deposited and/or attached matter inside a film forming apparatus, such as a CVD apparatus, without damaging the apparatus interior.

The present application includes methods, apparatuses, and systems for cleaning an aluminum wheel. In particular instances, a method of treating an exterior surface of an aluminum vehicle wheel comprising: blasting the exterior surface a first occurrence for a first duration at a first velocity using blasting media; blasting the exterior surface a second occurrence for a second duration at a second velocity using blasting media after blasting the exterior surface for a first duration, the second velocity being substantially lower than the first velocity; and, arranging the vehicle wheel in contact with vibratory finishing media and vibrating the vehicle wheel with the vibratory finishing media for a duration after blasting the exterior surface in each of the first and second occurrences.

The present application includes methods, apparatuses, and systems for cleaning an aluminum wheel. In particular instances, a method of treating an exterior surface of an aluminum vehicle wheel comprising: blasting the exterior surface a first occurrence for a first duration at a first velocity using blasting media; blasting the exterior surface a second occurrence for a second duration at a second velocity using blasting media after blasting the exterior surface for a first duration, the second velocity being substantially lower than the first velocity; and, arranging the vehicle wheel in contact with vibratory finishing media and vibrating the vehicle wheel with the vibratory finishing media for a duration after blasting the exterior surface in each of the first and second occurrences.

A method of cleaning a substrate for a blank mask including: a first cleaning including irradiating a cleaning target substrate with a pre-treatment light to prepare a substrate cleaned with light, and a second cleaning including applying a first cleaning solution and a post-treatment light to the substrate cleaned with light to prepare the substrate for the blank mask, is disclosed.

A method of cleaning a substrate for a blank mask including: a first cleaning including irradiating a cleaning target substrate with a pre-treatment light to prepare a substrate cleaned with light, and a second cleaning including applying a first cleaning solution and a post-treatment light to the substrate cleaned with light to prepare the substrate for the blank mask, is disclosed.

The invention relates to a device for cleaning a workpiece produced by means of additive production from a granular and/or powdery production material and/or for removing excess granular and/or powdery production material after additive workpiece production. The device comprises a housing in which a workpiece mounting is arranged on which or on which the produced workpiece can be arranged. In or on the housing at least one conveyor is arranged to convey, in particular, excess production material, away from the housing interior. At least one movable nozzle is arranged on at least one movable nozzle arm in the housing interior, such that the workpiece and the housing interior can be acted upon by at least one flow of the cleaning fluid during a cleaning cycle in which the workpiece and/or housing interior are purged of, in particular, excess production material. At least one nozzle rotation is provided, in which the nozzle can be rotated about at least one nozzle rotation axis relative to the nozzle arm. At least one arm trajectory movement and/or at least one arm rotation is provided, in which the nozzle arm can be moved and/or rotated relative to the workpiece mounting along at least one arm trajectory and/or about at least one arm rotation axis. The rotational speed of the nozzle rotation and the speed of the arm movement and/or the arm rotation are constituted such that during a cleaning cycle the flow of the cleaning fluid assumes all, or almost all, flow directions within the housing interior, such that the whole surface, or almost the whole surface, of the workpiece and of the housing interior, can be exposed to the cleaning flow from all, or almost all, directions.

The invention relates to a device for cleaning a workpiece produced by means of additive production from a granular and/or powdery production material and/or for removing excess granular and/or powdery production material after additive workpiece production. The device comprises a housing in which a workpiece mounting is arranged on which or on which the produced workpiece can be arranged. In or on the housing at least one conveyor is arranged to convey, in particular, excess production material, away from the housing interior. At least one movable nozzle is arranged on at least one movable nozzle arm in the housing interior, such that the workpiece and the housing interior can be acted upon by at least one flow of the cleaning fluid during a cleaning cycle in which the workpiece and/or housing interior are purged of, in particular, excess production material. At least one nozzle rotation is provided, in which the nozzle can be rotated about at least one nozzle rotation axis relative to the nozzle arm. At least one arm trajectory movement and/or at least one arm rotation is provided, in which the nozzle arm can be moved and/or rotated relative to the workpiece mounting along at least one arm trajectory and/or about at least one arm rotation axis. The rotational speed of the nozzle rotation and the speed of the arm movement and/or the arm rotation are constituted such that during a cleaning cycle the flow of the cleaning fluid assumes all, or almost all, flow directions within the housing interior, such that the whole surface, or almost the whole surface, of the workpiece and of the housing interior, can be exposed to the cleaning flow from all, or almost all, directions.

A substrate processing method includes preparing a substrate including an etching target film and a mask; etching the etching target film through the mask by plasma; and heat-treating the substrate at a preset temperature after the etching of the etching target film.

A substrate processing method includes preparing a substrate including an etching target film and a mask; etching the etching target film through the mask by plasma; and heat-treating the substrate at a preset temperature after the etching of the etching target film.