A method for maintaining and cleaning air scrubbers. The air scrubbers are maintained and cleaned by applying an aqueous ozone solution thereto.

A method and a system for cleaning a work, the sum A of the areas (mm.sup.2), the sum B of the areas (mm.sup.2) and the determined supply flow rate Q (L/min) or the supply flow rate Q (L/min) and one or both of the determined sum A of the areas (mm.sup.2) and the determined sum B of the areas (mm.sup.2) satisfy the predetermined relations.

An apparatus for fabricating a semiconductor device may include a nozzle having a slit configured to eject solution and an ultraviolet emitter provided outside the nozzle. The ultraviolet emitter and the nozzle may be configured to move horizontally. The slit may be provided on a bottom surface of the nozzle.

A cleaning system includes a planar material beneath a soiled grow table. The planar material is non-porous except for a drain. Above the planar material is a plate layer including at least two layers of runners arranged in a grid where each successive layer is offset at an angle with respect to the grid of a previous layer. The plate layer rests upon the non-porous material. An upper layer covers the plate layer and has a plurality of holes. A roller table is provided for slideably supporting the grow table. Nozzles are positioned over the grow table and is/are interfaced to a pump for receiving and spraying liquid from the pump downwardly towards the grow table. The liquid and impurities (e.g., soil, leaves) fall to the upper layer and through the plurality of holes for cleaning and filtering the liquid before the liquid is returned to the pump.

A substrate processing method includes a first cleaning process and a second cleaning process. In the first cleaning process, a substrate is cleaned with a first cleaning solution. In the second cleaning process, the substrate is cleaned with a second cleaning solution having a lower cleanliness than the first cleaning solution after the first cleaning process.

A substrate processing method is provided, which includes: a substrate holding step of causing a substrate holding unit to hold a substrate; an ozone-containing hydrofluoric acid solution supplying step of supplying an ozone-containing hydrofluoric acid solution containing ozone dissolved therein a hydrofluoric acid solution to one major surface of the substrate held by the substrate holding unit; a brush-cleaning step of cleaning the one major surface of the substrate by bringing a cleaning brush into contact with the one major surface of the substrate after the ozone-containing hydrofluoric acid solution supplying step; and an ozone water supplying step of supplying ozone water to the one major surface of the substrate before start of the brush-cleaning step after the ozone-containing hydrofluoric acid solution supplying step or in the brush-cleaning step.

An ozone disinfecting system includes a water holding tank configured to hold water for use by the ozone disinfecting system. An ozone generator machine is configured to convert the water into an ozone cleaner agent. An ozone holding tank is configured to hold the ozone cleaner agent created by the ozone generator machine. A drain is configured to drain fluid from the ozone holding tank to the water holding tank. A pump is configured to cycle the fluid from the water holding tank to the ozone generator machine and into the ozone holding tank. A controller is configured to control the pump, the ozone generator machine, and the drain. Wherein, the controller controls the pump, the ozone generator machine and the drain to create the ozone cleaner agent from the water and cycle it between the water holding tank and the ozone holding tank at a specified cycle time.

A method for evaluating a silicon wafer, including: a pre surface defect measuring step for performing a surface defect measurement on the silicon wafer in advance, a cleaning step of alternately repeating on the silicon wafer an oxidation treatment by ozone water and an oxide film removal treatment by hydrofluoric acid under a condition of not completely removing an oxide film formed on a surface of the silicon wafer, and an incremental defect measuring step of performing a surface defect measurement on the silicon wafer after the cleaning step and measuring incremental defects that increased relative to defects measured in the pre surface defect measuring step, wherein the cleaning step and the incremental defect measuring step are alternately performed repeatedly multiple times and the silicon wafer is evaluated based on a measurement result of the incremental defects after each cleaning step.

A disclosed system includes one or more ozone generators disposed and a fluid mixer configured to inject ozone generated by the one or more ozone generators into water received from a water source via a water inlet to produce an aqueous ozone solution that is output via an aqueous ozone solution outlet. The aqueous ozone solution outlet is fluidically coupled to a splitter. The system further includes a janitorial fill station with a first faucet fluidically coupled to a first output of the splitter and configured to dispense a first portion of the aqueous ozone solution, a carbon filter fluidically coupled to a second output of the splitter and configured to reduce an ozone concentration of a second portion of the aqueous ozone solution to produce purified water for consumption, and a second faucet fluidically coupled to the carbon filter and configured to dispense the purified water.

A method for cleaning a substrate is provided. The method includes following operations. A substrate is received. The substrate includes a first layer over a surface of the substrate and a second layer over the first layer. A plurality of particles are disposed over the surface of the first layer. A first mega sonic agitation is performed on the substrate with applying a first mixture. A second mega sonic agitation is performed on the substrate with applying a second mixture. A frequency of the first mega sonic agitation is greater than 3 MHz, and a frequency of the second mega sonic agitation is greater than 3 MHz. A flow rate of the first mixture is between approximately 1000 ml/min and approximately 5000 ml/min. A flow rate of the second mixture is between 1000 ml/min and approximately 3000 ml/min.