A hot water pressure washer employs an internal combustion engine with a drive shaft having an exhaust manifold fluidly connected to an exhaust water heat exchanger. The engine is driveably connected to a hydrodynamic heater, and a high-pressure pump for generating a stream of high-pressure fluid. The hot water pressure washer captures 80-90% of the thermal energy generated during combustion processes of the engine for heating water.

An automatic mold cleaning device includes an automatic cleaning system, a mold clamping system and a waste recovery system.

A method of forming a semiconductor device includes soaking a batch of wafers in a first cleaning liquid, replacing the first cleaning liquid with a second cleaning liquid, soaking the batch of wafers in the second cleaning liquid, and soaking the batch of wafers in an etchant. The first cleaning liquid has a first temperature. The second cleaning liquid has a second temperature. The etchant has a third temperature. The second temperature is between the first temperature and the third temperature.

There is provided a substrate processing apparatus, including: a substrate holder configured to hold a substrate with a surface of the substrate on which a concavo-convex pattern is formed oriented upward; a liquid supply unit configured to supply a processing liquid to the substrate held by the substrate holder to form a liquid film at least in a concave portion of the concavo-convex pattern; a heating unit configured to irradiate the substrate held by the substrate holder or the liquid film with a laser beam for heating the liquid film; and a heating controller configured to control the heating unit, wherein the heating controller controls the heating unit to expose the entire concave portion in a depth direction from the processing liquid by irradiating the laser beam onto the substrate or the liquid film from the heating unit.

The notched base ring comprises a base ring sheet body including a top portion, a bottom portion, a first end connecting the top portion to the bottom portion, and a second end connecting the bottom portion to the top portion. The top portion includes a plurality of attachment lugs and defines a plurality of notches, each notch being at least partially defined by two lugs disposed on opposite sides of the notch, the top portion also including an angled top edge that is disposed at each of the attachment lugs, and the bottom portion includes a bottom support edge.

A compressor cleaning apparatus to clean a compressor of a gas turbine is provided. The compressor cleaning apparatus includes a nozzle configured to inject a cleaning fluid into an interior of a compressor, a fluid supply tube connected to the nozzle to supply the cleaning fluid to the nozzle, a first cleaning fluid supply connected to the fluid supply tube to supply a first cleaning fluid, and a second cleaning fluid supply connected to the fluid supply tube to supply a second cleaning fluid having a temperature higher than that of the first cleaning fluid.

An aircraft windshield wiper system includes a wiper arm, a wiper blade coupled to a first end of the wiper arm, and an output shaft coupled to a second end of the wiper arm. The wiper blade includes a fluid dispensing system including nozzles, a fluid control unit, fluid lines, fluid source, and a user interface. The wiper blade with the fluid dispensing system is configured to dispense a variety of fluids directly from the wiper blade onto the windshield of an aircraft.

A method for effectively cleaning vias (20034), trenches (20036) or recessed areas on a substrate (20010) using an ultra/mega sonic device (1003, 3003, 16062, 17072), comprising: applying liquid (1032) into a space between a substrate (20010) and an ultra/mega sonic device (1003, 3003, 16062, 17072); setting an ultra/mega sonic power supply at frequency f.sub.1 and power P.sub.1 to drive said ultra/mega sonic device (1003, 3003, 16062, 17072); after the ratio of total bubbles volume to volume inside vias (20034), trenches (20036) or recessed areas on the substrate (20010) increasing to a first set value, setting said ultra/mega sonic power supply at frequency f.sub.2 and power P.sub.2 to drive said ultra/mega sonic device (1003, 3003, 16062, 17072); after the ratio of total bubbles volume to volume inside the vias (20034), trenches (20036) or recessed areas reducing to a second set value, setting said ultra/mega sonic power supply at frequency f.sub.1 and power P.sub.1 again; repeating above steps till the substrate (20010) being cleaned.

Provided are a method and system for increasing etch rate and etch selectivity of a masking layer on a substrate in an etch treatment system, the etch treatment system configured for single substrate processing. The method comprises placing the substrate into the etch processing chamber, the substrate containing the masking layer and a layer of silicon or silicon oxide, obtaining a supply of steam water vapor mixture at elevated pressure, obtaining a supply of treatment liquid for selectively etching the masking layer over the silicon or silicon oxide at a selectivity ratio, combining the treatment liquid and the steam water vapor mixture, and injecting the combined treatment liquid and the steam water vapor mixture into the etch processing chamber. The flow of the combined treatment liquid and the steam water vapor mixture is controlled to maintain a target etch rate and a target etch selectivity ratio of the masking layer to the layer of silicon or silicon oxide.

Disclosed is a method of adjusting a concentration of a chemical liquid in a treatment liquid, the method including: treating a substrate by supplying a treatment liquid stored in a main tank from a nozzle in a heated state to the substrate, and recovering the treatment liquid used in the treatment of the substrate to the main tank directly or via still another tank, and then reusing the recovered treatment liquid, a concentration adjustment operation of adjusting a concentration of the treatment liquid in the main tank is performed in a standby time period in which the substrate is not treated with the treatment liquid, and the concentration adjustment operation is performed by discharging the treatment liquid in a heated state from the nozzle to evaporate a part of the diluting solution, and recovering the discharged treatment liquid to the main tank.