Patent classifications
B21C1/003
ELECTRICAL WIRE OR CABLE, WIRE HARNESS, AND METHOD OF MANUFACTURING ALUMINUM ALLOY STRAND
A method of manufacturing an aluminum alloy strand from an aluminum alloy containing: not less than 0.001 mass % and less than 0.009 mass % of Ti, 0.4 to 0.9 mass % of Fe, 0.005 to 0.008 mass % of Zr, 0 to 0.02 mass % of Si, and at least one of 0 to 0.05 mass % of Cu and 0.04 to 0.45 mass % of mg with a residue being composed of aluminum and inevitable impurities, the method comprising the steps of: (1) a step of forming a wire rod using the aluminum alloy; (2) a step of drawing the wire rod to a desired final diameter without performing heat treatment; and (3) a step of continuous annealing or batch annealing the drawn wire material.
ALUMINUM ALLOY CONDUCTOR WIRE, ALUMINUM ALLOY STRANDED WIRE, COATED WIRE, WIRE HARNESS AND METHOD OF MANUFACTURING ALUMINUM ALLOY CONDUCTOR WIRE
An aluminum alloy conductor wire has a composition comprising Mg: 0.1-1.0 mass %, Si: 0.1-1.20 mass %, Fe: 0.01-1.40 mass %, Ti: 0-0.100 mass %, B: 0-0.030 mass %, Cu: 0-1.00 mass %, Ag: 0-0.50 mass %, Au: 0-0.50 mass %, Mn: 0-1.00 mass %, Cr: 0-1.00 mass %, Zr: 0-0.50 mass %, Hf: 0-0.50 mass %, V: 0-0.50 mass %, Sc: 0-0.50 mass %, Co: 0-0.50 mass %, Ni: 0-0.50 mass %, and the balance: Al and inevitable impurities, where Ti, B, Cu, Ag, Au, Mn, Cr, Zr, Hf, V, Sc, Co and Ni are arbitrary additive components of which at least one component may be contained or none of the components may be contained. A density of a compound having a particle size of 0.5-5.0 m and containing Fe is 1 to 300 particles/10000 m.sup.2.
Austenite-ferrite stainless steel of improved machinability
The present invention provides an austenite-ferrite stainless steel. The steel composition contains in % by weight: 0.01%C0.10% 20.0%Cr24.0% 1.0%Ni3.0% 0.12%N0.20% 0.5%Mn2.0% 1.6%Cu3.0% 0.05%Mo1.0% W0.15% 0.05%Mo+W/21.0% 0.2%Si1.5% Al0.05% V0.5% Nb0.5% Ti0.5% B0.003% Co0.5% REM0.1% Ca0.03% Mg0.1% Se0.005% O0.01% S0.030% P0.040% the rest being iron and impurities resulting from the production and the microstructure being composed of austenite and 35 to 65% ferrite by volume, the composition furthermore obeying the following relations:
40IF65
with
IF=10% Cr+5.1% Mo+1.4% Mn+24.3% Si+35% Nb+71.5% Ti595.4% C245.1% N9.3% Ni3.3% Cu99.8
and
IRCGCU32.0
with
IRCGCU=% Cr+3.3% Mo+2% Cu+16% N+2.6% Ni0.7% Mn
and
0IU6.0
with
IU=3% Ni+% Cu+% Mn100% C25% N2(% Cr+% Si)6% Mo+45 as well as a method of manufacture of plates, bands, coils, bars, wires, profiles, forged pieces and molded pieces of this steel.
Method for manufacturing brass-plated steel wire and brass-plated steel wire
Provided is a method for manufacturing a brass-plated steel wire in which improvement in the quality of the brass-plated steel wire and energy saving in the manufacturing process are balanced and a brass-plated steel wire obtained by the method. The method is a method for manufacturing a brass-plated steel wire comprising a plating process in which a steel wire rod is brass plated and a final wire drawing process in which the obtained brass-plated steel wire rod is subjected to a final drawing. The method includes a zinc oxide removing process in which the amount of zinc oxide on the surface of the brass-plated steel wire rod is made smaller than 50 mg/m.sup.2 before the final wire drawing process.
Aluminum alloy wire and method of producing the same
An aluminum alloy wire, having an alloy composition which contains: 0.01 to 1.2 mass % of Fe, 0.1 to 1.0 mass % of Mg, and 0.1 to 1.0 mass % of Si, with the balance being Al and inevitable impurities, in which a grain size is 1 to 30 m, and in which a dispersion density of Mg.sub.2Si needle precipitate in the aluminum alloy is 10 to 200/m.sup.2; and a method of producing the same.
Bonding wire for semiconductor device use and method of production of same
Bonding wire for semiconductor device use where both leaning failures and spring failures are suppressed by (1) in a cross-section containing the wire center and parallel to the wire longitudinal direction (wire center cross-section), there are no crystal grains with a ratio a/b of a long axis a and a short axis b of 10 or more and with an area of 15 m.sup.2 or more (fiber texture), (2) when measuring a crystal direction in the wire longitudinal direction in the wire center cross-section, the ratio of crystal direction <100> with an angle difference with respect to the wire longitudinal direction of 15 or less is, by area ratio, 10% to less than 50%, and (3) when measuring a crystal direction in the wire longitudinal direction at the wire surface, the ratio of crystal direction <100> with an angle difference with respect to the wire longitudinal direction of 15 or less is, by area ratio, 70% or more. During the drawing step, a drawing operation with a rate of reduction of area of 15.5% or more is performed at least once. The final heat treatment temperature and the pre-final heat treatment temperature are made predetermined ranges.
Bonding wire for semiconductor device use and method of production of same
Bonding wire for semiconductor device use where both leaning failures and spring failures are suppressed by (1) in a cross-section containing the wire center and parallel to the wire longitudinal direction (wire center cross-section), there are no crystal grains with a ratio a/b of a long axis a and a short axis b of 10 or more and with an area of 15 m.sup.2 or more (fiber texture), (2) when measuring a crystal direction in the wire longitudinal direction in the wire center cross-section, the ratio of crystal direction <100> with an angle difference with respect to the wire longitudinal direction of 15 or less is, by area ratio, 50% to 90%, and (3) when measuring a crystal direction in the wire longitudinal direction at the wire surface, the ratio of crystal direction <100> with an angle difference with respect to the wire longitudinal direction of 15 or less is, by area ratio, 50% to 90%. During the drawing step, a drawing operation with a rate of reduction of area of 15.5% or more is performed at least once. The final heat treatment temperature and the pre-final heat treatment temperature are made predetermined ranges.
COMPOSITION OF ZINC WIRE
Disclosed is a method for manufacturing a zinc wire. The method comprises melting a zinc ingot at a first temperature of 420 C. to 650 C. to form a molten zinc. Further, the method comprises calibrating a set of impurities in the molten zinc. Furthermore, the method comprises maintaining the molten zinc at a second temperature between 400 C. to 600 C. Subsequently, the method comprises fluxing the molten zinc to remove a non-metallic impurity. Further, the method comprises transferring the molten zinc into a casting mould to form a cast bar. Furthermore, the method comprises continuously feeding the cast bar from the casting mould to a rolling mill to form a rolled zinc wire rod. Finally, the method comprises drawing a zinc wire rod from the rolled zinc wire rod.
IRREGULARLY-SHAPED DIE AND METHOD FOR PRODUCING IRREGULARLY-SHAPED WIRE
An irregularly-shaped diamond die is an irregularly-shaped die for producing an irregularly-shaped wire, wherein a processing hole having a bearing portion is provided, a first side and a second side that face each other are provided in a cross section of the bearing portion perpendicular to a wire drawing direction, and each of the first side and the second side has a shape that is convex toward a center side of the processing hole in the cross section.
NEW 6XXX ALUMINUM ALLOYS
New 6xxx aluminum alloy products are disclosed. The new 6xxx aluminum alloy products may include tin and may realize an improved combination of properties, such as an improved combination of two or more of strength, ductility (elongation), extrudability, extrusion temperature, extrusion speed, and the absence of visually apparent surface defects.