Method of refining metal alloys A method of refining the grain size of (i) an alloy comprising aluminum and at least 3% w/w silicon or (ii) an alloy comprising magnesium, comprises the steps of (a) adding sufficient niobium and boron to the alloy in order to form niobium diboride or Al.sub.3Nb or both, or (b) adding niobium diboride to the alloy, or (c) adding Al.sub.3Nb to the alloy, or (d) any combination thereof.

Method of refining metal alloys A method of refining the grain size of (i) an alloy comprising aluminum and at least 3% w/w silicon or (ii) an alloy comprising magnesium, comprises the steps of (a) adding sufficient niobium and boron to the alloy in order to form niobium diboride or Al.sub.3Nb or both, or (b) adding niobium diboride to the alloy, or (c) adding Al.sub.3Nb to the alloy, or (d) any combination thereof.

An alloy modifying agent for use in preparing a metal semisolid slurry, where the components and mass ratio thereof is silicon:iron:copper:manganese:magnesium:zinc:titanium:lead:aluminum having a mass ratio of (6.05-6.95):(0.15-0.45):(0.12-0.65):(0.002-0.006):(0.001-0.5):(0.025-0.05):(0.002-0.08):(0.002-0.06):(90.5-93.2). Also, a method for preparing the alloy modifying agent and a method for using the alloy modifying agent. The alloy modifying agent is capable of increasing the solid-liquid ratio and the spherical crystal content of the semisolid slurry, increasing the preparation efficiency of the semisolid slurry and the quality of the slurry, and ensuring the quality of a final die casting product.

An alloy modifying agent for use in preparing a metal semisolid slurry, where the components and mass ratio thereof is silicon:iron:copper:manganese:magnesium:zinc:titanium:lead:aluminum having a mass ratio of (6.05-6.95):(0.15-0.45):(0.12-0.65):(0.002-0.006):(0.001-0.5):(0.025-0.05):(0.002-0.08):(0.002-0.06):(90.5-93.2). Also, a method for preparing the alloy modifying agent and a method for using the alloy modifying agent. The alloy modifying agent is capable of increasing the solid-liquid ratio and the spherical crystal content of the semisolid slurry, increasing the preparation efficiency of the semisolid slurry and the quality of the slurry, and ensuring the quality of a final die casting product.

In a semiconductor-mounting heat dissipation base plate including: an insulating substrate to which a metal circuit layer for mounting a semiconductor chip thereon is fixed; a heat dissipation base formed from the same metal material as the metal circuit layer at a side opposite to the metal circuit layer across the insulating substrate and fixed to the insulating substrate similar to the metal circuit layer; and a strengthening member provided in the heat dissipation base so as to be separated from the insulating substrate, the sizes of crystal grains of a metal structure at a part of the heat dissipation base or the metal circuit layer are reduced by a crystal size reducing material adhered to a mold, thereby preventing an adverse effect of a columnar crystal structure.

In a semiconductor-mounting heat dissipation base plate including: an insulating substrate to which a metal circuit layer for mounting a semiconductor chip thereon is fixed; a heat dissipation base formed from the same metal material as the metal circuit layer at a side opposite to the metal circuit layer across the insulating substrate and fixed to the insulating substrate similar to the metal circuit layer; and a strengthening member provided in the heat dissipation base so as to be separated from the insulating substrate, the sizes of crystal grains of a metal structure at a part of the heat dissipation base or the metal circuit layer are reduced by a crystal size reducing material adhered to a mold, thereby preventing an adverse effect of a columnar crystal structure.

Various embodiments provide apparatus and methods for melting materials and for containing the molten materials within melt zone during melting. Exemplary apparatus may include a vessel configured to receive a material for melting therein; a load induction coil positioned adjacent to the vessel to melt the material therein; and a containment induction coil positioned in line with the load induction coil. The material in the vessel can be heated by operating the load induction coil at a first RF frequency to form a molten material. The containment induction coil can be operated at a second RF frequency to contain the molten material within the load induction coil. Once the desired temperature is achieved and maintained for the molten material, operation of the containment induction coil can be stopped and the molten material can be ejected from the vessel into a mold through an ejection path.

Various embodiments provide apparatus and methods for melting materials and for containing the molten materials within melt zone during melting. Exemplary apparatus may include a vessel configured to receive a material for melting therein; a load induction coil positioned adjacent to the vessel to melt the material therein; and a containment induction coil positioned in line with the load induction coil. The material in the vessel can be heated by operating the load induction coil at a first RF frequency to form a molten material. The containment induction coil can be operated at a second RF frequency to contain the molten material within the load induction coil. Once the desired temperature is achieved and maintained for the molten material, operation of the containment induction coil can be stopped and the molten material can be ejected from the vessel into a mold through an ejection path.

The disclosure is directed to methods of forming metallic glass multilayers by depositing a liquid layer of a metallic glass forming alloy over a metallic glass layer, and to multilayered metallic glass articles produced using such methods.

The disclosure is directed to methods of forming metallic glass multilayers by depositing a liquid layer of a metallic glass forming alloy over a metallic glass layer, and to multilayered metallic glass articles produced using such methods.