Patent classifications
B22F1/12
SCALABLE SYNTHESIS OF SEMI-CONDUCTING CHEVREL PHASE COMPOUNDS VIA SELFPROPAGATING HIGH TEMPERATURE SYNTHESIS
Methods for the scalable and systematic synthesis of semiconducting Chevrel phase compounds via self-propagating high temperature synthesis (SHS) are provided. The provided methods utilize elemental precursors not utilized by typical synthesis methods. The precursors may include molybdenum (Mo), molybdenum disulfide (MoS.sub.2), and a ternary cation. In various aspects, the ternary cation may be copper (Cu), iron (Fe), or nickel (Ni). The utilization of the provided precursors and SHS decreases the time it takes to synthesize Chevrel phase compounds as compared to typical heat treatment methods.
BIOCIDAL COMPOSITIONS OF COPPER AND SILVER AND PROCESS FOR ADHERING TO PRODUCT SUBSTRATES
Biocidal metallic compositions and films, and methods for making and adhering biocidal compositions and films to surfaces requiring continued protection without requiring frequent cleaning are disclosed. The biocidal compositions may include metals, such as copper or silver powder, which are applied to the exposed surface of a variety of different resins, glues, epoxies, solvents or other surface treatments to create a biocidal film over the surface of product substrates including metals, leathers, papers, plastics, cardstocks, and glass surfaces.
BIOCIDAL COMPOSITIONS OF COPPER AND SILVER AND PROCESS FOR ADHERING TO PRODUCT SUBSTRATES
Biocidal metallic compositions and films, and methods for making and adhering biocidal compositions and films to surfaces requiring continued protection without requiring frequent cleaning are disclosed. The biocidal compositions may include metals, such as copper or silver powder, which are applied to the exposed surface of a variety of different resins, glues, epoxies, solvents or other surface treatments to create a biocidal film over the surface of product substrates including metals, leathers, papers, plastics, cardstocks, and glass surfaces.
SYSTEM AND METHOD FOR ADDITIVE MANUFACTURING OF TURBOMACHINE COMPONENTS
A method for fabricating a turbomachine component including a metal alloy with a layering device is provided. The method for fabricating the turbomachine component may include combining two or more elemental powders to form a powdered material. The method for fabricating the turbomachine component may also include forming a first metal alloy layer of the turbomachine component on a substrate. Forming the first metal alloy layer on the substrate may include melting a first portion of the powdered material to a first molten material with a heat source, mixing the first molten material with the heat source, and cooling the first molten material. The method for fabricating the turbomachine component may further include forming a second metal alloy layer of the turbomachine component on the first metal alloy layer, and binding the first metal alloy layer with the second metal alloy layer.
SYSTEM AND METHOD FOR ADDITIVE MANUFACTURING OF TURBOMACHINE COMPONENTS
A method for fabricating a turbomachine component including a metal alloy with a layering device is provided. The method for fabricating the turbomachine component may include combining two or more elemental powders to form a powdered material. The method for fabricating the turbomachine component may also include forming a first metal alloy layer of the turbomachine component on a substrate. Forming the first metal alloy layer on the substrate may include melting a first portion of the powdered material to a first molten material with a heat source, mixing the first molten material with the heat source, and cooling the first molten material. The method for fabricating the turbomachine component may further include forming a second metal alloy layer of the turbomachine component on the first metal alloy layer, and binding the first metal alloy layer with the second metal alloy layer.
METHODS OF ADDITIVE MANUFACTURING
Methods of producing three-dimensional alloy workpieces are described herein, which can comprise: producing a precursor workpiece on a layer-by-layer basis by depositing a layer of a mixed powder, the mixed powder comprising an elemental powder and a second powder; melting at least a portion of the elemental powder by directing an energy field onto a portion of the layer; and repeating the deposing and melting steps to form the precursor workpiece from a plurality of layers. The precursor workpiece can comprise a dispersed phase and a continuous phase, the dispersed phase being dispersed within the continuous phase, the dispersed phase comprising a plurality of discrete regions comprising the second powder, and the continuous phase comprising the melted elemental powder. The methods can further comprise heating the precursor workpiece to homogenize the continuous phase and the dispersed phase, thereby forming the three-dimensional alloy workpiece comprising a continuous alloy phase.
METHOD FOR PRODUCING A THERMOELECTRIC MATERIAL
A method for producing a thermoelectric material, comprising: mixing an Sn powder and a powder containing a first dopant element to obtain a first mixed raw material, heating the first mixed raw material at a temperature allowing for mutual diffusion of Sn and the first dopant element to obtain a first aggregate, pulverizing the first aggregate to obtain a first powder, mixing an Mg powder, an Si powder, and the first powder to obtain a second mixed raw material, heating the second mixed raw material at a temperature allowing for mutual diffusion of Mg, Si, Sn and the first dopant element to obtain a second aggregate, pulverizing the second aggregate to obtain a second powder, and pressure-sintering the second powder, and wherein the first dopant element is one or more elements selected from Al, Ag, As, Bi, Cu, Sb, Zn, P, and B.
METHOD FOR PRODUCING A THERMOELECTRIC MATERIAL
A method for producing a thermoelectric material, comprising: mixing an Sn powder and a powder containing a first dopant element to obtain a first mixed raw material, heating the first mixed raw material at a temperature allowing for mutual diffusion of Sn and the first dopant element to obtain a first aggregate, pulverizing the first aggregate to obtain a first powder, mixing an Mg powder, an Si powder, and the first powder to obtain a second mixed raw material, heating the second mixed raw material at a temperature allowing for mutual diffusion of Mg, Si, Sn and the first dopant element to obtain a second aggregate, pulverizing the second aggregate to obtain a second powder, and pressure-sintering the second powder, and wherein the first dopant element is one or more elements selected from Al, Ag, As, Bi, Cu, Sb, Zn, P, and B.
P-TYPE THERMOELECTRIC MATERIAL, THERMOELECTRIC ELEMENT AND METHOD FOR PRODUCING P-TYPE THERMOELECTRIC MATERIAL
A p-type thermoelectric material according to one aspect of the present invention is configured such that at least any one of a Mg site, a Si site, a Sn site and/or a Ge site in a compound composed of magnesium (Mg), silicon (Si), tin (Sn) and germanium (Ge) is substituted with any one or more elements selected from the group consisting of alkali metals of group 1A and gold (Au), silver (Ag), copper (Cu), zinc (Zn), calcium (Ca) and gallium (Ga) of group 1B.
P-TYPE THERMOELECTRIC MATERIAL, THERMOELECTRIC ELEMENT AND METHOD FOR PRODUCING P-TYPE THERMOELECTRIC MATERIAL
A p-type thermoelectric material according to one aspect of the present invention is configured such that at least any one of a Mg site, a Si site, a Sn site and/or a Ge site in a compound composed of magnesium (Mg), silicon (Si), tin (Sn) and germanium (Ge) is substituted with any one or more elements selected from the group consisting of alkali metals of group 1A and gold (Au), silver (Ag), copper (Cu), zinc (Zn), calcium (Ca) and gallium (Ga) of group 1B.