Patent classifications
B23H3/10
ELECTRODE FOR AN ELECTRO-EROSION PROCESS AND AN ASSOCIATED METHOD THEREOF
Electrode for an electro-erosion process, includes a shaft, a body coupled to the shaft, a plurality of machining-inserts, an insulated layer, and a flushing cover disposed on the body and coupled to the shaft. The shaft includes a channel, a plurality of first openings and second openings, where each opening is connected to the channel. The body includes a plurality of main-flushing channels, where each channel is connected to a corresponding first opening. The plurality of machining-inserts is spaced apart from each other along a circumferential direction and detachably coupled to a peripheral end portion of the body. Each machining-insert includes at least one third opening connected to a corresponding main-flushing channel. The insulated layer is disposed on top and bottom surfaces of the body. The flushing cover includes a plurality of side-flushing channels and a plurality of fourth openings, where each channel is connected to a corresponding second opening.
METHODS AND SYSTEMS FOR ELECTROCHEMICAL MACHINING
A method of operating an electrochemical machining system includes selectively performing an electrochemical machining process by an electrochemical machine of the electrochemical machining system in a macromachining mode or a micromachining mode by controlling a purity level of a machining liquid supplied to the electrochemical machine.
METHODS AND SYSTEMS FOR ELECTROCHEMICAL MACHINING
A method of operating an electrochemical machining system includes selectively performing an electrochemical machining process by an electrochemical machine of the electrochemical machining system in a macromachining mode or a micromachining mode by controlling a purity level of a machining liquid supplied to the electrochemical machine.
Electrochemical machining of geometrically complex passages
An electrochemical machining assembly for boring a passage in an electrically conductive workpiece. The electrochemical machining assembly includes an electrochemical machining tool having a telescoping collar with an articulating head coupled thereto. The telescoping collar is actuated between a contracted configuration and an extended configuration to advance the telescoping collar stepwise in the passage. The articulating head is tiltable relative to the telescoping collar to determine a direction of the passage. The electrochemical machining assembly is configured to remove material from the workpiece upon application of a voltage between the articulating head and the workpiece via a circulating electrolyte fluid to lengthen the passage.
Electrochemical machining of geometrically complex passages
An electrochemical machining assembly for boring a passage in an electrically conductive workpiece. The electrochemical machining assembly includes an electrochemical machining tool having a telescoping collar with an articulating head coupled thereto. The telescoping collar is actuated between a contracted configuration and an extended configuration to advance the telescoping collar stepwise in the passage. The articulating head is tiltable relative to the telescoping collar to determine a direction of the passage. The electrochemical machining assembly is configured to remove material from the workpiece upon application of a voltage between the articulating head and the workpiece via a circulating electrolyte fluid to lengthen the passage.
ELECTROCHEMICAL MECHANICAL POLISHING AND PLANARIZATION EQUIPMENT FOR PROCESSING CONDUCTIVE WAFER SUBSTRATE
The invention discloses an electrochemical mechanical polishing/planarization equipment for processing a polishing surface of a conductive wafer substrate, which includes a power supply; a polishing table with conductivity; a polishing pad including an insulating active layer and having holes where a conductive chemical liquid is accommodated; a polishing head having conductivity and being attached to the back of the polishing surface. The power supply, the polishing table, the chemical liquid, the conductive wafer substrate, and the polishing head in sequence form a conductive loop, and an electrochemical reaction layer is formed on the polishing surface of the conductive wafer substrate. The polishing head drives the wafer substrate to move relative to the polishing pad, and to implement a mechanical polishing or a chemical mechanical polishing of the electrochemical reaction layer.
ELECTROCHEMICAL MECHANICAL POLISHING AND PLANARIZATION EQUIPMENT FOR PROCESSING CONDUCTIVE WAFER SUBSTRATE
The invention discloses an electrochemical mechanical polishing/planarization equipment for processing a polishing surface of a conductive wafer substrate, which includes a power supply; a polishing table with conductivity; a polishing pad including an insulating active layer and having holes where a conductive chemical liquid is accommodated; a polishing head having conductivity and being attached to the back of the polishing surface. The power supply, the polishing table, the chemical liquid, the conductive wafer substrate, and the polishing head in sequence form a conductive loop, and an electrochemical reaction layer is formed on the polishing surface of the conductive wafer substrate. The polishing head drives the wafer substrate to move relative to the polishing pad, and to implement a mechanical polishing or a chemical mechanical polishing of the electrochemical reaction layer.
Electrode for an electro-erosion process and an associated method thereof
Electrode for an electro-erosion process, includes a shaft, a body coupled to the shaft, a plurality of machining-inserts, an insulated layer, and a flushing cover disposed on the body and coupled to the shaft. The shaft includes a channel, a plurality of first openings and second openings, each opening connected to the channel. The body includes a plurality of main-flushing channels, where each channel is connected to a corresponding first opening. The plurality of machining-inserts is spaced apart from each other along a circumferential direction and detachably coupled to a peripheral end portion of the body. Each machining-insert includes at least one third opening connected to a corresponding main-flushing channel. The insulated layer is disposed on top and bottom surfaces of the body. The flushing cover includes a plurality of side-flushing channels and a plurality of fourth openings, where each channel is connected to a corresponding second opening.
METHOD AND DEVICE FOR DETECTION OF METAL AND NON-METAL PARTICLE CONCENTRATION OF ELECTRICAL DISCHARGE MACHINING LIQUID
A method and a device for detection of metal and non-metal particle concentration of an electrical discharge machining liquid are disclosed. The method comprises steps of: (A) filling a tank with the electrical discharge machining liquid, wherein the tank comprises a tank wall, a first conductor, and a second conductor; (B) measuring a voltage between the first conductor and the second conductor by an electronic device, wherein the electronic device electrically connects to the first conductor and the second conductor, and the electronic device comprises a capacitance detection circuit; and (C) calculating a particle concentration or an equivalent dielectric constant of the electrical discharge machining liquid on the basis of the measured voltage.
Electrochemical mechanical polishing and planarization equipment for processing conductive wafer substrate
The invention discloses an electrochemical mechanical polishing/planarization equipment for processing a polishing surface of a conductive wafer substrate, which includes a power supply; a polishing table with conductivity; a polishing pad including an insulating active layer and having holes where a conductive chemical liquid is accommodated; a polishing head having conductivity and being attached to the back of the polishing surface. The power supply, the polishing table, the chemical liquid, the conductive wafer substrate, and the polishing head in sequence form a conductive loop, and an electrochemical reaction layer is formed on the polishing surface of the conductive wafer substrate. The polishing head drives the wafer substrate to move relative to the polishing pad, and to implement a mechanical polishing or a chemical mechanical polishing of the electrochemical reaction layer.