A method of yielding a thinner product wafer from a thicker base SiC wafer cut from a SiC ingot includes: supporting the base SiC wafer with a support substrate: and while the base SiC wafer is supported by the support substrate, cutting through the base SiC wafer in a direction parallel to a first main surface of the base SiC wafer using a wire as part of a wire electrical discharge machining (WEDM) process, to separate the product wafer from the base SiC wafer, the product wafer being attached to the support substrate when cut from the base SiC wafer.

A method of yielding a thinner product wafer from a thicker base SiC wafer cut from a SiC ingot includes: supporting the base SiC wafer with a support substrate: and while the base SiC wafer is supported by the support substrate, cutting through the base SiC wafer in a direction parallel to a first main surface of the base SiC wafer using a wire as part of a wire electrical discharge machining (WEDM) process, to separate the product wafer from the base SiC wafer, the product wafer being attached to the support substrate when cut from the base SiC wafer.

An additive manufactured workpiece includes one or more cavities having an inner surface. A dielectric interface is formed in the cavity, and conforms to the inner surface. The additive manufactured workpiece further includes an in-situ electrode in the cavities. The dielectric interface is interposed between the in-situ electrode and the inner surface of the workpiece.

An additive manufactured workpiece includes one or more cavities having an inner surface. A dielectric interface is formed in the cavity, and conforms to the inner surface. The additive manufactured workpiece further includes an in-situ electrode in the cavities. The dielectric interface is interposed between the in-situ electrode and the inner surface of the workpiece.

An additive manufactured workpiece includes one or more cavities having an inner surface. A dielectric interface is formed in the cavity, and conforms to the inner surface. The additive manufactured workpiece further includes an in-situ electrode in the cavities. The dielectric interface is interposed between the in-situ electrode and the inner surface of the workpiece.

An additive manufactured workpiece includes one or more cavities having an inner surface. A dielectric interface is formed in the cavity, and conforms to the inner surface. The additive manufactured workpiece further includes an in-situ electrode in the cavities. The dielectric interface is interposed between the in-situ electrode and the inner surface of the workpiece.

A method includes producing a bulk substrate and beveling an edge of the bulk substrate using an electrical discharge machining (EDM) process and/or an electrochemical discharge machining (ECDM) process.

A method includes producing a bulk substrate and beveling an edge of the bulk substrate using an electrical discharge machining (EDM) process and/or an electrochemical discharge machining (ECDM) process.

A method of yielding a thinner product wafer from a thicker base SiC wafer cut from a SiC ingot includes: supporting the base SiC wafer with a support substrate: and while the base SiC wafer is supported by the support substrate, cutting through the base SiC wafer in a direction parallel to a first main surface of the base SiC wafer using a wire as part of a wire electrical discharge machining (WEDM) process, to separate the product wafer from the base SiC wafer, the product wafer being attached to the support substrate when cut from the base SiC wafer.

A method of yielding a thinner product wafer from a thicker base SiC wafer cut from a SiC ingot includes: supporting the base SiC wafer with a support substrate: and while the base SiC wafer is supported by the support substrate, cutting through the base SiC wafer in a direction parallel to a first main surface of the base SiC wafer using a wire as part of a wire electrical discharge machining (WEDM) process, to separate the product wafer from the base SiC wafer, the product wafer being attached to the support substrate when cut from the base SiC wafer.