B23K1/008

HIGH-STRENGTH SOLDER-PLATED AL-MG-SI ALUMINUM MATERIAL
20230078028 · 2023-03-16 · ·

The present disclosure provides an aluminium material for the manufacture of high-strength, soldered components, including an aluminium alloy. After soldering, the aluminium material is in materially-bonded contact with at least one solder layer. The object of providing an aluminium material is to provide not only good soldering properties and formability, but also high strength. This is achieved because the aluminium alloy of the aluminium material has a solidus temperature, and the aluminium material has an increase in yield strength compared to the state after soldering and cooling.

BRAZING SHEET, BRAZING METHOD, AND HEAT EXCHANGER MANUFACTURING METHOD
20230080566 · 2023-03-16 ·

A brazing sheet may be used for brazing under an atmosphere of an inert gas without flux. The brazing sheet may include at least three layers. The at least three layers may include a core material, a brazing material layer, and an intermediate layer. The at least three layers may be cladded by an outermost layer of the brazing material layer. The intermediate layer may be disposed on a face of the core material. The core material may be composed of a first aluminum alloy including at least one of (i) 0.20 weight % to 1.0 weight % of Cu, (ii) 0.8 weight % to 1.8 weight % of Mn, and (iii) 0.25 weight % to 1.5 weight % of Mg. The intermediate layer may be composed of a second aluminum alloy including 0.20 weight % or less of each of Si and Fe and 0.10 weight % or less of each of Cu, Mn, and Cr.

BRAZING SHEET, BRAZING METHOD, AND HEAT EXCHANGER MANUFACTURING METHOD
20230080566 · 2023-03-16 ·

A brazing sheet may be used for brazing under an atmosphere of an inert gas without flux. The brazing sheet may include at least three layers. The at least three layers may include a core material, a brazing material layer, and an intermediate layer. The at least three layers may be cladded by an outermost layer of the brazing material layer. The intermediate layer may be disposed on a face of the core material. The core material may be composed of a first aluminum alloy including at least one of (i) 0.20 weight % to 1.0 weight % of Cu, (ii) 0.8 weight % to 1.8 weight % of Mn, and (iii) 0.25 weight % to 1.5 weight % of Mg. The intermediate layer may be composed of a second aluminum alloy including 0.20 weight % or less of each of Si and Fe and 0.10 weight % or less of each of Cu, Mn, and Cr.

Heat exchanger

A heat exchanger includes: a main body; and a tube sheet that is bonded to the main body with a brazing material and is used to fix the main body to a support by a fixing member. The tube sheet includes: a bonding surface to which the brazing material is applied; a rising portion that rises from the bonding surface; and a through-hole through which the fixing member is passed. The through-hole is opened at the rising portion, penetrates the tube sheet, and has an inner peripheral surface to which the brazing material is not applied. The main body includes heat transfer tubes through which refrigerant flows, and the tube sheet is bonded to surface of the heat transfer tube.

Method for producing bonded body, method for producing insulated circuit board, and method for producing insulated circuit board with heatsink

A method for producing a bonded body includes: a laminating step of forming a laminated body in which a first member and a second member are temporarily bonded to each other by providing a temporary bonding material including an organic material on at least one of a bonding surface of the first member and a bonding surface of the second member; and a bonding step of pressurizing and heating the laminated body in a laminating direction and bonding the first member and the second member to each other. In the bonding step, during a temperature increase process of heating the laminated body up to a predetermined bonding temperature, at least a pressurization load P2 at a decomposition temperature T.sub.D of the organic material included in the temporary bonding material is lower than a pressurization load P1 at the bonding temperature.

Solder preform with internal flux core including thermochromic indicator

Some implementations of the disclosure are directed to a solder preform, comprising: a solder alloy body, the solder alloy body comprising at least one opening; and a flux core embedded in the solder alloy body, the flux core comprising a thermochromic indicator, wherein during reflow soldering, the flux core comprising the thermochromic indicator is configured to flow out of the at least one opening of the solder alloy.

Process for producing a plate heat exchanger and plate heat exchanger

A plate heat exchanger has two metal plates brought into abutment, with a solder material between the plates. The plates are heated up to a first temperature. The plates are placed into a mold, the mold surfaces of which have cavities for envisaged channel structures. Channel structures are formed by local internal pressure forming of at least one plate under pressurization by the tool. The plates are heated up to a second temperature. The plates are solder bonded at the abuted surfaces. A plate heat exchanger has two metal plates, wherein channel structures have been formed in at least one plate and the plates are bonded to one another by soldering away from the channel structures. Eutectic microstructures having a longest extent of less than 50 micrometers are formed in the solder layer.

Semiconductor device manufacturing method
11476229 · 2022-10-18 · ·

According to an embodiment, a temperature of an inside of a furnace is set to fall within a range of a reduction temperature or more of a carboxylic acid and less than a melting temperature of a solder bump, and the inside is concurrently set to have a first carboxylic acid gas concentration. Thereafter, the temperature of the inside is raised up to the melting temperature, and the inside is concurrently set to have a second carboxylic acid gas concentration. The second carboxylic acid gas concentration is lower than the first carboxylic acid gas concentration, and is a concentration containing a minimum amount of carboxylic acid gas defined to achieve reduction on an oxide film of the solder bump. The inside has the second carboxylic acid gas concentration at least at a time when the temperature of the inside reaches the melting temperature.

Semiconductor device manufacturing method
11476229 · 2022-10-18 · ·

According to an embodiment, a temperature of an inside of a furnace is set to fall within a range of a reduction temperature or more of a carboxylic acid and less than a melting temperature of a solder bump, and the inside is concurrently set to have a first carboxylic acid gas concentration. Thereafter, the temperature of the inside is raised up to the melting temperature, and the inside is concurrently set to have a second carboxylic acid gas concentration. The second carboxylic acid gas concentration is lower than the first carboxylic acid gas concentration, and is a concentration containing a minimum amount of carboxylic acid gas defined to achieve reduction on an oxide film of the solder bump. The inside has the second carboxylic acid gas concentration at least at a time when the temperature of the inside reaches the melting temperature.

Copper/ceramic bonded body, insulating circuit board, method for producing copper/ceramic bonded body, and method for producing insulating circuit board

This copper/ceramic bonded body includes: a copper member made of copper or a copper alloy; and a ceramic member made of nitrogen-containing ceramics, the copper member and the ceramic member are bonded to each other, in which, between the copper member and the ceramic member, an active metal nitride layer containing nitrides of one or more active metals selected from Ti, Zr, Nb, and Hf is formed on a ceramic member side, and a Mg solid solution layer in which Mg is solid-dissolved in a Cu matrix is formed between the active metal nitride layer and the copper member, and Cu-containing particles composed of either one or both of Cu particles and compound particles of Cu and the active metal are dispersed in an interior of the active metal nitride layer.