The invention relates to recovery of tin-lead solder from electronic printed circuit board scrap. The scrap is placed in a liquid-permeable and/or gas-permeable container, which is placed in a liquid or gaseous heat-transfer medium heated to or above the melting temperature of the tin-lead solder. After the tin-lead solder is melted, the heat-transfer medium is removed from the container, then, by means of rotation of the container, the melted tin-lead solder and the remains of the heat-transfer medium are removed from the container. The device comprises a hollow container, which is mounted so as to be capable of rotation and is designed in the form of a body of revolution, and is liquid-permeable and/or gas-permeable in a radial direction from the axis of rotation. The container can be designed in the form of a drum, which can be vertically displaced and has perforated side walls.

A method for braze repair of tight cracks in a superalloy component is provided. The method includes directing energy, e.g., from an acoustic energy source, towards surfaces of the tight crack to break up one or more contaminants, corrosion products, or oxides at the surface. The directed energy may cause opposed walls of the tight crack to vibrate to break up the oxides, and to generate a modest heat for allowing infiltration of the tight crack with a braze material. The braze material is then melted at a melt temperature of the braze material but below the melt temperature of the component. The braze material is then solidified to repair the tight crack.

A method for braze repair of tight cracks in a superalloy component is provided. The method includes directing energy, e.g., from an acoustic energy source, towards surfaces of the tight crack to break up one or more contaminants, corrosion products, or oxides at the surface. The directed energy may cause opposed walls of the tight crack to vibrate to break up the oxides, and to generate a modest heat for allowing infiltration of the tight crack with a braze material. The braze material is then melted at a melt temperature of the braze material but below the melt temperature of the component. The braze material is then solidified to repair the tight crack.

A power supply control device, applied for an electronic device is disclosed. The electronic device includes a case, wherein a user holds the case to operate the electronic device. The power supply control device includes a sensing module, including a first sensing component for sensing whether the user is touching a first sensing area of the case to generate a first determination signal; and a second sensing component for sensing whether the user is touching a second sensing area of the case to generate a second determination signal; and a power supply module, including a first relay, for connecting or disconnecting a system power end of the electronic device from a power supply terminal according to the first determination signal; and a second relay, for connecting or disconnecting a system ground end of the electronic device from a ground terminal according to the second determination signal.

Techniques for high speed handling of ultra-small chips (e.g., micro-chips) by selective laser bonding and/or debonding are provided. In one aspect, a method includes: providing a first wafer including chips bonded to a surface thereof; contacting the first wafer with a second wafer, the second wafer including a substrate bonded to a surface thereof, wherein the contacting aligns individual chips with bonding sites on the substrate; and debonding the individual chips from the first wafer using a debonding laser having a small spot size of about 0.5 m to about 100 m, and ranges therebetween. A system is also provided that has digital cameras, a motorized XYZ-axis stage, and a computer control system configured to i) control a spot size of the at least one laser source and ii) adjust a positioning of the sample to align individual chips with a target area of the laser.

Techniques for high speed handling of ultra-small chips (e.g., micro-chips) by selective laser bonding and/or debonding are provided. In one aspect, a method includes: providing a first wafer including chips bonded to a surface thereof; contacting the first wafer with a second wafer, the second wafer including a substrate bonded to a surface thereof, wherein the contacting aligns individual chips with bonding sites on the substrate; and debonding the individual chips from the first wafer using a debonding laser having a small spot size of about 0.5 m to about 100 m, and ranges therebetween. A system is also provided that has digital cameras, a motorized XYZ-axis stage, and a computer control system configured to i) control a spot size of the at least one laser source and ii) adjust a positioning of the sample to align individual chips with a target area of the laser.

A controller and a control method for a hot air blower used in the field of solder reworking. The controller allows a user to change the control parameters effectively while using the hot air blower.

A controller and a control method for a hot air blower used in the field of solder reworking. The controller allows a user to change the control parameters effectively while using the hot air blower.

An apparatus for debonding a wafer from a bonded wafer stack is disclosed. The apparatus includes a flashlamp, a flashlamp control unit, and a wafer debonding unit. A processed wafer can be debonded from a bonded wafer stack by applying light pulses from the flashlamp. The flashlamp is controlled by the flashlamp control unit that includes a capacitor bank, a power supply for charging the capacitor bank, an IGBT-based switching device, and a frequency controller. The wafer debonding unit includes a debonding vacuum table, a wafer feeding robot for conveying the bonded wafer stack to the debonding vacuum table, a set of suction cups for applying vacuum to the bonded wafer stack when light pulses are being emitted by the flashlamp to debond the processed wafer from the bonded wafer stack.

An apparatus for debonding a wafer from a bonded wafer stack is disclosed. The apparatus includes a flashlamp, a flashlamp control unit, and a wafer debonding unit. A processed wafer can be debonded from a bonded wafer stack by applying light pulses from the flashlamp. The flashlamp is controlled by the flashlamp control unit that includes a capacitor bank, a power supply for charging the capacitor bank, an IGBT-based switching device, and a frequency controller. The wafer debonding unit includes a debonding vacuum table, a wafer feeding robot for conveying the bonded wafer stack to the debonding vacuum table, a set of suction cups for applying vacuum to the bonded wafer stack when light pulses are being emitted by the flashlamp to debond the processed wafer from the bonded wafer stack.